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Results: 1-25/643

Authors: Theil, JA
Citation: Ja. Theil, Fluorinated amorphous carbon films for low permittivity interlevel dielectrics, J VAC SCI B, 17(6), 1999, pp. 2397-2410

Authors: Harrell, LE Bigioni, TP Cullen, WG Whetten, RL First, PN
Citation: Le. Harrell et al., Scanning tunneling microscopy of passivated Au nanocrystals immobilized onAu(111) surface, J VAC SCI B, 17(6), 1999, pp. 2411-2416

Authors: Vullers, RJM Ahlskog, M Cannaerts, M Van Haesendonck, C
Citation: Rjm. Vullers et al., Field induced local oxidation of Ti and Ti/Au structures by an atomic force microscope with diamond coated tips, J VAC SCI B, 17(6), 1999, pp. 2417-2422

Authors: Vidu, R Hara, S
Citation: R. Vidu et S. Hara, In situ electrochemical atomic force microscopy study on Au(100)/Cd interface in sulfuric acid solution, J VAC SCI B, 17(6), 1999, pp. 2423-2430

Authors: Blum, B Salvarezza, RC Arvia, AJ
Citation: B. Blum et al., Vapor-deposited gold film formation on highly oriented pyrolitic graphite.A transition from pseudo-two-dimensional branched island growth to continuous film formation, J VAC SCI B, 17(6), 1999, pp. 2431-2438

Authors: An, B Fukuyama, S Yokogawa, K Yoshimura, M
Citation: B. An et al., Surface superstructure of Arc(+)-bombarded highly oriented pyrolytic graphite during recrystallization, J VAC SCI B, 17(6), 1999, pp. 2439-2442

Authors: Fuhrmann, H Candel, A Dobeli, M Muhle, R
Citation: H. Fuhrmann et al., Minimizing damage during focused-ion-beam induced desorption of hydrogen, J VAC SCI B, 17(6), 1999, pp. 2443-2446

Authors: Zeng, QD Wang, C Bai, CL Li, Y Yan, XJ
Citation: Qd. Zeng et al., Atomic force microscopy of the topochemical photopolymerization of diolefin crystals, J VAC SCI B, 17(6), 1999, pp. 2447-2451

Authors: Iwata, F Matsumoto, T Ogawa, R Sasaki, A
Citation: F. Iwata et al., Scratching on polystyrene thin film without bumps using atomic force microscopy, J VAC SCI B, 17(6), 1999, pp. 2452-2456

Authors: Wang, S
Citation: S. Wang, Near-field polarization states and optical images in transmission mode through different surface structures, J VAC SCI B, 17(6), 1999, pp. 2457-2461

Authors: Lee, MB Atoda, N Tsutsui, K Ohtsu, M
Citation: Mb. Lee et al., Nanometric aperture arrays fabricated by wet and dry etching of silicon for near-field optical storage application, J VAC SCI B, 17(6), 1999, pp. 2462-2466

Authors: Hou, SM Zhao, XY Yang, C Xue, ZQ Yang, WJ Chen, HY
Citation: Sm. Hou et al., Ultrahigh density data storage in an organic film with a scanning tunneling microscope, J VAC SCI B, 17(6), 1999, pp. 2467-2470

Authors: Park, YD Temple, D Jung, KB Kumar, D Holloway, PH Pearton, SJ
Citation: Yd. Park et al., Fabrication and magneto-transport and SQUID measurements of submicron spin-valve structures, J VAC SCI B, 17(6), 1999, pp. 2471-2475

Authors: Stevie, FA Downey, SW Brown, SR Shofner, TL Decker, MA Dingle, T Christman, L
Citation: Fa. Stevie et al., Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry, J VAC SCI B, 17(6), 1999, pp. 2476-2482

Authors: Olson, RT Panitz, JA
Citation: Rt. Olson et Ja. Panitz, Direct current and pulsed operation of contaminated liquid metal ion sources, J VAC SCI B, 17(6), 1999, pp. 2483-2487

Authors: Nelson, C Palmateer, SC Forte, AR Lyszczarz, TM
Citation: C. Nelson et al., Comparison of metrology methods for quantifying the line edge roughness ofpatterned features, J VAC SCI B, 17(6), 1999, pp. 2488-2498

Authors: Pau, S Trimble, LE Blatchford, JW Watson, GP Frackoviak, J Cirelli, R Nalamasu, O
Citation: S. Pau et al., Focus drilling and attenuated phase shift mask for subwavelength contact window printing using positive and negative resists, J VAC SCI B, 17(6), 1999, pp. 2499-2506

Authors: Chen, Y Macintyre, D Thoms, S
Citation: Y. Chen et al., Electron beam lithography process for T- and Gamma-shaped gate fabricationusing chemically amplified DUV resists and PMMA, J VAC SCI B, 17(6), 1999, pp. 2507-2511

Authors: Bermudez, VM
Citation: Vm. Bermudez, Low-energy electron-beam effects on poly(methyl methacrylate) resist films, J VAC SCI B, 17(6), 1999, pp. 2512-2518

Authors: Azuma, T Chiba, K Kawamura, D Miyoshi, S Ozaki, T Kageyama, H
Citation: T. Azuma et al., Application of a thin-resist process for KrF imaging to 130 nm device fabrication, J VAC SCI B, 17(6), 1999, pp. 2519-2523

Authors: Fukai, YK Hyuga, F Nittono, T Watanabe, K Sugahara, H
Citation: Yk. Fukai et al., Improvement of InGaP/GaAs heterointerface quality by controlling AsH3 flowconditions, J VAC SCI B, 17(6), 1999, pp. 2524-2529

Authors: Lee, CY Shiao, HP Wu, MC Chen, CW
Citation: Cy. Lee et al., Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition, J VAC SCI B, 17(6), 1999, pp. 2530-2535

Authors: Mohaidat, JM Bitar, RN
Citation: Jm. Mohaidat et Rn. Bitar, Quantum mechanical funneling through a biased double-cascaded barrier, J VAC SCI B, 17(6), 1999, pp. 2536-2539

Authors: Arbiol, J Peiro, F Cornet, A Michelakis, K Georgakilas, A
Citation: J. Arbiol et al., Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures, J VAC SCI B, 17(6), 1999, pp. 2540-2544

Authors: Levin, TM Jessen, GH Ponce, FA Brillson, LJ
Citation: Tm. Levin et al., Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells, J VAC SCI B, 17(6), 1999, pp. 2545-2552
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