Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 1-25/749

Authors: ROSSNAGEL SM
Citation: Sm. Rossnagel, DIRECTIONAL AND IONIZED PHYSICAL VAPOR-DEPOSITION FOR MICROELECTRONICS APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2585-2608

Authors: KONIG U GLUCK M HOCK G
Citation: U. Konig et al., SI SIGE FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2609-2614

Authors: NEUFELD E STICHT A BRUNNER K RIEDL H ABSTREITER G HOLZBRECHER H BAY H
Citation: E. Neufeld et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE CHARACTERIZATION OF ERBIUM-DOPED SIGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2615-2618

Authors: MASINI G COLACE L ASSANTO G PEARSALL TP PRESTING H
Citation: G. Masini et al., VOLTAGE-TUNABLE NEAR-INFRARED PHOTODETECTOR - VERSATILE COMPONENT FOROPTICAL COMMUNICATION-SYSTEMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2619-2622

Authors: ZAIMA S YASUDA Y
Citation: S. Zaima et Y. Yasuda, STUDY OF REACTION AND ELECTRICAL-PROPERTIES AT TI SIGE/SI(100) CONTACTS FOR ULTRALARGE SCALE INTEGRATED APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2623-2628

Authors: XIA Z RISTOLAINEN EO HOLLOWAY PH
Citation: Z. Xia et al., SIGE SI HETEROSTRUCTURES PRODUCED BY DOUBLE-ENERGY SI+ AND GE+, AND GE+ AND GE2+ ION IMPLANTATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2629-2632

Authors: SAFAR GAM RODRIGUES WN MOREIRA MVB DEOLIVEIRA AG NEVES BRA VILELA JM ANDRADE MS ROCHET F
Citation: Gam. Safar et al., ROLE OF TE ON THE MORPHOLOGY OF INAS SELF-ASSEMBLED ISLANDS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2633-2638

Authors: COHEN GM ZISMAN P BAHIR G RITTER D
Citation: Gm. Cohen et al., GROWTH OF STRAINED GAINP ON INP BY METALORGANIC MOLECULAR-BEAM EPITAXY FOR HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR APPLICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2639-2643

Authors: KUZE N GOTO H MATSUI M SHIBASAKI I
Citation: N. Kuze et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS ALGAASSB DEEP QUANTUM-WELL STRUCTURES ON GAAS SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2644-2649

Authors: LONGO M LOVERGINE N MANCINI AM LEO G BERTI M
Citation: M. Longo et al., INVESTIGATION OF GROWTH MODE BEHAVIOR AND SURFACE-MORPHOLOGY EVOLUTION OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN ZNTE LAYERS ON (001)GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2650-2655

Authors: CAO XA HU HT DING XM YUAN ZL DONG Y CHEN XY LAI B HOU XY
Citation: Xa. Cao et al., PASSIVATION OF THE GAAS(100) SURFACE WITH A VAPOR-DEPOSITED GAS FILM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2656-2659

Authors: HALL E NAONE R ENGLISH JE BLANK HR CHAMPLAIN J KROEMER H
Citation: E. Hall et al., OPERATIONAL EXPERIENCE WITH A VALVED ANTIMONY CRACKER SOURCE FOR USE IN MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2660-2664

Authors: LOSURDO M CAPEZZUTO P BRUNO G LEFEBVRE PR IRENE EA
Citation: M. Losurdo et al., STUDY OF THE MECHANISMS OF GAN FILM GROWTH ON GAAS-SURFACES BY THERMAL AND PLASMA NITRIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2665-2671

Authors: RIESZ F DOBOS L KARANYI J
Citation: F. Riesz et al., THERMAL-DECOMPOSITION OF BULK AND HETEROEPITAXIAL (100)INP SURFACES -A COMBINED IN-SITU SCANNING ELECTRON-MICROSCOPY AND MASS-SPECTROMETRIC STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2672-2674

Authors: HUE X BOUDART B CROSNIER Y
Citation: X. Hue et al., GATE RECESSING OPTIMIZATION OF GAAS AL0.22GA0.78AS HETEROJUNCTION FIELD-EFFECT TRANSISTOR USING CITRIC-ACID HYDROGEN-PEROXIDE AMMONIUM HYDROXIDE FOR POWER APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2675-2679

Authors: SNYDER PG CHO SJ
Citation: Pg. Snyder et Sj. Cho, INVESTIGATION OF CITRIC-ACID HYDROGEN-PEROXIDE ETCHED GAAS AND AL0.3GA0.7AS SURFACES BY SPECTROSCOPIC ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2680-2685

Authors: JONES JT CROKE ET GARLAND CM MARSH OJ MCGILL TC
Citation: Jt. Jones et al., EPITAXIAL SILICON GROWN ON CEO2 SI(111) STRUCTURE BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2686-2689

Authors: HONG J CHO H MAEDA T ABERNATHY CR PEARTON SJ SHUL RJ HOBSON WS
Citation: J. Hong et al., NEW PLASMA CHEMISTRIES FOR DRY-ETCHING OF INGAAIP ALLOYS - BL(3) AND BBR3, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2690-2694

Authors: MITRA A NORDQUIST CD JACKSON TN MAYER TS
Citation: A. Mitra et al., MAGNETRON ION ETCHING OF THROUGH-WAFER VIA HOLES FOR GAAS MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS USING SICL4, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2695-2698

Authors: WESTERHEIM AC JONES RD MAGER PJ DUBASH JH DALTON TJ GOSS MW BAUM SK DASS SK
Citation: Ac. Westerheim et al., HIGH-DENSITY, INDUCTIVELY-COUPLED PLASMA ETCH OF SUB HALF-MICRON CRITICAL LAYERS - TRANSISTOR POLYSILICON GATE DEFINITION AND CONTACT FORMATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2699-2706

Authors: LIMANOND S SI J TSENG YL
Citation: S. Limanond et al., NEURAL OPTIMAL ETCH TIME CONTROLLER FOR REACTIVE ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2707-2711

Authors: CHEN CR HU SF CHEN PC HWANG HL HSIA LC
Citation: Cr. Chen et al., PROPERTIES AND RELIABILITY OF ULTRATHIN OXIDES GROWN ON 4-INCH DIAMETER SILICON-WAFERS BY MICROWAVE PLASMA AFTERGLOW OXIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2712-2719

Authors: CHEN R KORETSKY MD
Citation: R. Chen et Md. Koretsky, ELIMINATION OF GATE OXIDE DAMAGE DURING ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF THE TUNGSTEN POLYCIDE GATE STRUCTURE (WSI POLY-SI)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2720-2724

Authors: LEE JL KIM YT
Citation: Jl. Lee et Yt. Kim, CONTACT RESISTANCE DEGRADATION OF PD GE OHMIC CONTACT ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2725-2728

Authors: WESTERHEIM AC BULGER JM WHELAN CS SRIRAM TS ELLIOTT LJ MAZIARZ JJ
Citation: Ac. Westerheim et al., INTEGRATION OF CHEMICAL-VAPOR-DEPOSITION TITANIUM NITRIDE FOR 0.25 MU-M CONTACTS AND VIAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2729-2733
Risultati: 1-25 | 26-50 | 51-75 | 76-100 | >>