Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 1-25/550

Authors: ZYPMAN FR EPPELL SJ
Citation: Fr. Zypman et Sj. Eppell, ELECTROSTATIC TIP-SURFACE INTERACTION IN SCANNING FORCE MICROSCOPY - A CONVENIENT EXPRESSION USEFUL FOR ARBITRARY TIP AND SAMPLE GEOMETRIES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1853-1860

Authors: JIA JF INOUE K HASEGAWA Y YANG WS SAKURAI T
Citation: Jf. Jia et al., LOCAL WORK FUNCTION FOR CU(111)-AU SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1861-1864

Authors: HERRANEN M NORDIN M CARLSSON JO
Citation: M. Herranen et al., IN-SITU SCANNING FORCE MICROSCOPY STUDY OF TIN LAYERS IN SULFURIC-ACID, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1865-1870

Authors: ZHOU L XU GQ NG HT LI SFY
Citation: L. Zhou et al., SCANNING THERMAL MICROSCOPE TIP-INDUCED CHEMICAL-REACTION ON SOLID ORGANOMETALLIC COMPOUND THIN-FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1871-1875

Authors: SOMMERHALTER C MATTHES TW BONEBERG J LEIDERER P LUXSTEINER MC
Citation: C. Sommerhalter et al., TUNNELING SPECTROSCOPY ON SEMICONDUCTORS WITH A LOW SURFACE-STATE DENSITY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1876-1883

Authors: YASUE T YOSHIDA Y KOYAMA H KATO T NISHIOKA T
Citation: T. Yasue et al., DIELECTRIC-BREAKDOWN OF SILICON-OXIDE STUDIED BY SCANNING PROBE MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1884-1888

Authors: WU XC WANG RY ZOU BS WU PF XU JR WEI H
Citation: Xc. Wu et al., SYNTHESIS, STRUCTURE, AND OPTICAL-PROPERTIES OF NANOMETER-SIZED IN2O3CAPPED BY ANIONIC SURFACTANT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1889-1892

Authors: HA JS PARK KH YUN WS LEE EH PARK SJ
Citation: Js. Ha et al., EVOLUTION OF SURFACE-MORPHOLOGY IN THE INITIAL-STAGE OF NITRIDATION OF THE SI(111)-7X7 SURFACE BY NITROGEN-IONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1893-1898

Authors: HUANG YM ZHAI BG
Citation: Ym. Huang et Bg. Zhai, FOURIER-TRANSFORM INFRARED STUDY OF POROUS SILICON DIPPED INTO CR3+ SOLUTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1899-1901

Authors: KONGETIRA P NEUDECK GW TAKOUDIS CG
Citation: P. Kongetira et al., EXPRESSION FOR THE GROWTH-RATE OF SELECTIVE EPITAXIAL-GROWTH OF SILICON USING DICHLOROSILANE, HYDROGEN-CHLORIDE, AND HYDROGEN IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION PANCAKE REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1902-1907

Authors: CHU PK SCHUELER BW REICH F LINDLEY PM
Citation: Pk. Chu et al., DETERMINATION OF TRACE METALLIC IMPURITIES ON 200-MM SILICON-WAFERS BY TIME-OF-FLIGHT SECONDARY-ION-MASS SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1908-1912

Authors: MUNIANDY R BOYLAN R CHIN R BELL N SANKMAN R
Citation: R. Muniandy et al., DEGRADATION MEASUREMENTS USING FULLY PROCESSED TEST TRANSISTORS IN HIGH-DENSITY PLASMA REACTORS FOR FAILURE ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1913-1918

Authors: DELMOTTE F HUGON MC AGIUS B COURANT JL
Citation: F. Delmotte et al., LOW-TEMPERATURE DEPOSITION OF SINX-H USING SIH4-N-2 OR SIH4-NH3 DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1919-1926

Authors: FRANCO G CAMALLERI CM RAINERI V GHIDINI G CLEMENTI C PELLIZZER F
Citation: G. Franco et al., EFFECTS OF CLEANING AND POSTOXIDATION ANNEALING ON THIN OXIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1927-1935

Authors: CHATTERJEE A ALI I JOYNER K MERCER D KUEHNE J MASON M ESQUIVEL A ROGERS D OBRIEN S MEI P MURTAZA S KWOK SP TAYLOR K NAG S HAMES G HANRATTY M MARCHMAN H ASHBURN S CHEN IC
Citation: A. Chatterjee et al., INTEGRATION OF UNIT PROCESSES IN A SHALLOW TRENCH ISOLATION MODULE FOR A 0.25 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1936-1942

Authors: KIM J KIM SG JUNGLING KC
Citation: J. Kim et al., CORRELATED ELECTRICAL AND OPTICAL MEASUREMENTS OF FIRING SEMICONDUCTOR BRIDGES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1943-1948

Authors: DECKER JY FERNANDEZ A SWEENEY DW
Citation: Jy. Decker et al., GENERATION OF SUBQUARTER-MICRON RESIST STRUCTURES USING OPTICAL INTERFERENCE LITHOGRAPHY AND IMAGE REVERSAL, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1949-1953

Authors: CHEN GS HUMPHREYS CJ
Citation: Gs. Chen et Cj. Humphreys, INVESTIGATION OF THE PROXIMITY EFFECT IN AMORPHOUS ALF3 ELECTRON-BEAMRESISTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1954-1960

Authors: PORKOLAB GA CHEN YJ TABATABAEI SA AGARWALA S JOHNSON FG KING O DAGENAIS M FRIZZELL RE BEARD WT STONE DR
Citation: Ga. Porkolab et al., AIR-BRIDGES, AIR-RAMPS, PLANARIZATION, AND ENCAPSULATION USING PYROLYTIC PHOTORESIST IN THE FABRICATION OF 3-DIMENSIONAL MICROSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1961-1965

Authors: KOBAYASHI K WATANUKI O
Citation: K. Kobayashi et O. Watanuki, POLARIZATION-DEPENDENT CONTRAST IN NEAR-FIELD OPTICAL MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1966-1970

Authors: SZILAGYI M CHO H
Citation: M. Szilagyi et H. Cho, SYNTHESIS OF ELECTROSTATIC FOCUSING AND DEFLECTION SYSTEMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1971-1982

Authors: MORAIS J FAZAN TA LANDERS R PEREIRA RG SATO EAS CARVALHO W
Citation: J. Morais et al., EFFECT OF RAPID THERMAL ANNEALING ON THE MICROSTRUCTURE AND ELECTRICAL CHARACTERISTICS OF AU NI/AU/GE/NI MULTILAYERS DEPOSITED ON N-TYPE INGAAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1983-1986

Authors: DEFELIPE TS MURARKA SP BEDELL S LANFORD WA
Citation: Ts. Defelipe et al., BIAS-TEMPERATURE STABILITY OF THE CU(MG) SIO2/P-SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1987-1989

Authors: LIU Y SINGH R POOLE K DIEFENDORF RJ HARRISS J CANNON K
Citation: Y. Liu et al., CHARACTERIZATION OF AL-Y ALLOY THIN-FILMS DEPOSITED BY DIRECT-CURRENTMAGNETRON SPUTTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1990-1994

Authors: PARK YB RHEE SW HONG JH
Citation: Yb. Park et al., GROWTH AND FRACTAL SCALING NATURE OF COPPER THIN-FILMS ON TIN SURFACEBY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION FROM HEXAFLUOROACETHYLACETONATE CU-(I) VINYLTRIMETHYLSILANE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1995-2000
Risultati: 1-25 | 26-50 | 51-75 | 76-100 | >>