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Authors: FUJITA D JIANG QD NEJOH H
Citation: D. Fujita et al., FABRICATION OF GOLD NANOSTRUCTURES ON A VICINAL SI(111) 7X7 SURFACE USING ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE AND A GOLD-COATED TUNGSTEN TIP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3413-3419

Authors: UMBACH CC WESELAK BW BLAKELY JM SHEN Q
Citation: Cc. Umbach et al., CHARACTERIZATION OF LARGE-AREA ARRAYS OF NANOSCALE SI TIPS FABRICATEDUSING THERMAL-OXIDATION AND WET ETCHING OF SI PILLARS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3420-3424

Authors: JARAUSCH KF STARK TJ RUSSELL PE
Citation: Kf. Jarausch et al., SILICON STRUCTURES FOR IN-SITU CHARACTERIZATION OF ATOMIC-FORCE MICROSCOPE PROBE GEOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3425-3430

Authors: FILIOS AA HEFNER SS TSU R
Citation: Aa. Filios et al., CORRELATION OF RAMAN AND OPTICAL STUDIES WITH ATOMIC-FORCE MICROSCOPYIN POROUS SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3431-3435

Authors: ATHEY PR URBAN FK HOLLOWAY PH
Citation: Pr. Athey et al., USE OF MULTIPLE ANALYTICAL TECHNIQUES TO CONFIRM IMPROVED OPTICAL MODELING OF SNO2-F FILMS BY ATOMIC-FORCE MICROSCOPY AND SPECTROSCOPIC ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3436-3444

Authors: SCHOUTERDEN K LAIRSON BM AZARIAN MH
Citation: K. Schouterden et al., OPTIMAL FILTERING OF SCANNING PROBE MICROSCOPE IMAGES FOR WEAR ANALYSIS OF SMOOTH SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3445-3451

Authors: OHTO M TANAKA K
Citation: M. Ohto et K. Tanaka, ATOMIC STRUCTURES OF AG2TE STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3452-3454

Authors: TANG CM SWYDEN TA THOMASON KA YADON LN TEMPLE D BALL CA PALMER WD MANCUSI JE VELLENGA D MCGUIRE GE
Citation: Cm. Tang et al., EMISSION MEASUREMENTS AND SIMULATION OF SILICON FIELD-EMITTER ARRAYS WITH LINEAR PLANAR LENSES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3455-3459

Authors: CARLOTTI G DOUCET L DUPEUX M
Citation: G. Carlotti et al., COMPARATIVE-STUDY OF THE ELASTIC PROPERTIES OF SILICATE GLASS-FILMS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3460-3464

Authors: FULTZ WW NEUDECK GW
Citation: Ww. Fultz et Gw. Neudeck, AMMONIA NITRIDATION OF THERMAL POLYOXIDE TO ELIMINATE EPITAXIAL AMBIENT INDUCED DIELECTRIC PINHOLE FORMATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3465-3469

Authors: ALLEN LR YUWANG V SATO M
Citation: Lr. Allen et al., SELECTIVE DRY-ETCHING OF OXIDE-FILMS FOR SPACER APPLICATIONS IN A HIGH-DENSITY PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3470-3472

Authors: BELL FH JOUBERT O
Citation: Fh. Bell et O. Joubert, POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .4. COMPARISON OF PHOTORESIST AND OXIDE MASKED POLYSILICON ETCHING-THICKNESS DETERMINATIONOF GATE OXIDE LAYERS USING X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3473-3482

Authors: TAKANO H NAKANO H MINAMI H HOSOGI K YOSHIDA N SATO K HIROSE Y TSUBOUCHI N
Citation: H. Takano et al., ELECTRON-BEAM ULTRAVIOLET HYBRID EXPOSURE COMBINED WITH NOVEL BILAYERRESIST SYSTEM FOR A 0.15-MU-M T-SHAPED GATE FABRICATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3483-3488

Authors: LAVINE JM BULISZAK MJ
Citation: Jm. Lavine et Mj. Buliszak, AG2TE AS2S3 - A HIGH-CONTRAST, TOP-SURFACE IMAGING RESIST FOR 193 NM LITHOGRAPHY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3489-3491

Authors: ABRAHAMSHRAUNER B CHEN WJ
Citation: B. Abrahamshrauner et Wj. Chen, NEUTRAL SHADOWING IN CIRCULAR CYLINDRICAL TRENCH HOLES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3492-3496

Authors: LEI PM SUBRAMANIAM S BERNSTEIN GH WILLIAMSON W GILBERT BK CHOW DH
Citation: Pm. Lei et al., PROCESS TECHNOLOGY FOR MONOLITHIC HIGH-SPEED SCHOTTKY RESONANT TUNNELING DIODE LOGIC INTEGRATED-CIRCUITS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3497-3501

Authors: OUELLET L TREMBLAY Y GAGNON G CARON M CURRIE JF GUJRATHI SC BIBERGER M
Citation: L. Ouellet et al., EFFECT OF THE TI TIN BILAYER BARRIER AND ITS SURFACE-TREATMENT ON THERELIABILITY OF A TI/TIN/ALSICU/TIN CONTACT METALLIZATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3502-3508

Authors: DRIAD R ALEXANDRE F JUHEL M LAUNAY P
Citation: R. Driad et al., HIGH-STABILITY HETEROJUNCTION BIPOLAR-TRANSISTORS WITH CARBON-DOPED BASE GROWN BY ATOMIC LAYER CHEMICAL BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3509-3513

Authors: VOGT A HARTNAGEL HL MIEHE G FUESS H SCHMITZ J
Citation: A. Vogt et al., ELECTRICAL AND MICROSTRUCTURE ANALYSIS OF OHMIC CONTACTS TO P-TYPE AND N-TYPE GASB, GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3514-3519

Authors: VARTULI CB PEARTON SJ ABERNATHY CR MACKENZIE JD SHUL RJ ZOLPER JC LOVEJOY ML BACA AG HAGEROTTCRAWFORD M
Citation: Cb. Vartuli et al., THERMAL-STABILITY OF W, WSIX, AND TI AL OHMIC CONTACTS TO INGAN, INN,AND INALN/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3520-3522

Authors: VARTULI CB PEARTON SJ ABERNATHY CR MACKENZIE JD LAMBERS ES ZOLPER JC
Citation: Cb. Vartuli et al., HIGH-TEMPERATURE SURFACE DEGRADATION OF III-V NITRIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3523-3531

Authors: AMBACHER O BRANDT MS DIMITROV R METZGER T STUTZMANN M FISCHER RA MIEHR A BERGMAIER A DOLLINGER G
Citation: O. Ambacher et al., THERMAL-STABILITY AND DESORPTION OF GROUP-III NITRIDES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3532-3542

Authors: SHIOJIMA K NISHIMURA K TOKUMITSU M NITTONO T SUGAWARA H HYUGA F
Citation: K. Shiojima et al., THERMALLY STABLE INGAP GAAS SCHOTTKY CONTACTS USING LOW N CONTENT DOUBLE-LAYER WSIN/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3543-3549

Authors: TOMITA N TANAKA M SAEKI T SHIMOMURA S HIYAMIZU S FUJITA K WATANABE T HIGUCHI T SANO N ADACHI A
Citation: N. Tomita et al., IMPROVED CATHODOLUMINESCENCE PROPERTIES OF GAAS AL0.3GA0.7AS TILTED T-SHAPED QUANTUM WIRES FABRICATED ON (111)B FACET BY GLANCING-ANGLE MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3550-3554

Authors: FREIRE SLS CURY LA MATINAGA FM VALADARES EC MOREIRA MVB DEOLIVEIRA AG ALVES AR VILELA JMC ANDRADE MS LIMA TM SLUSS JA
Citation: Sls. Freire et al., QUASI-PERIODIC MICROFACETS ON THE SURFACE OF ALGAAS GAAS QUANTUM-WELLSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON (311)A HIGH-INDEX SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3555-3558
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