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Results: 1-25/596

Authors: STOPKA M HADJIISKI L OESTERSCHULZE E KASSING R
Citation: M. Stopka et al., SURFACE INVESTIGATIONS BY SCANNING THERMAL MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2153-2156

Authors: EASTMAN T SHI J ZHU DM
Citation: T. Eastman et al., SYNTHESIS AND ATOMIC-FORCE MICROSCOPY CHARACTERIZATION OF GEFE NANOPHASE MATERIALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2157-2159

Authors: XU H NG KYS
Citation: H. Xu et Kys. Ng, SCANNING-TUNNELING-MICROSCOPY INVESTIGATION OF CO CLUSTER GROWTH AND INDUCED SURFACE-MORPHOLOGY CHANGES ON HIGHLY ORIENTED PYROLITIC GRAPHITE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2160-2165

Authors: NAMATSU H TAKAHASHI Y NAGASE M MURASE K
Citation: H. Namatsu et al., FABRICATION OF THICKNESS-CONTROLLED SILICON NANOWIRES AND THEIR CHARACTERISTICS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2166-2169

Authors: KURIHARA K IWADATE K NAMATSU H NAGASE M MURASE K
Citation: K. Kurihara et al., SI NANOSTRUCTURES FABRICATED BY ELECTRON-BEAM LITHOGRAPHY COMBINED WITH IMAGE REVERSAL PROCESS USING ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2170-2174

Authors: TERAKADO S GOTO T OGURA M KANEDA K KITAMURA O SUZUKI S NAKAO M TANAKA K
Citation: S. Terakado et al., NEW MICROFABRICATION TECHNIQUE AN A SUBMICROMETER SCALE BY SYNCHROTRON RADIATION-EXCITED ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2175-2178

Authors: MUNOZ J DOMINGUEZ C
Citation: J. Munoz et C. Dominguez, DRY DEVELOPMENT OF PHOTOSENSITIVE POLYIMIDES FOR HIGH-RESOLUTION AND ASPECT RATIO APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2179-2183

Authors: SAVILLE GF PLATZMAN PM BRANDES G RUEL R WILLETT RL
Citation: Gf. Saville et al., FEASIBILITY STUDY OF PHOTOCATHODE ELECTRON PROJECTION LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2184-2188

Authors: ADA ET HANLEY L ETCHIN S MELNGAILIS J DRESSICK WJ CHEN MS CALVERT JM
Citation: Et. Ada et al., ION-BEAM MODIFICATION AND PATTERNING OF ORGANOSILANE SELF-ASSEMBLED MONOLAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2189-2196

Authors: TERAOKA Y AOKI H IKAWA E KIKKAWA T NISHIYAMA I
Citation: Y. Teraoka et al., OBSERVATION OF SIDEWALL CONTAMINATION IN SUBMICRON CONTACT HOLES BY THERMAL-DESORPTION SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2197-2200

Authors: SUZUKI M KUSUNOKI T SHINADA H YAGUCHI T
Citation: M. Suzuki et al., REDUCING ELECTRON-ENERGY DISPERSION OF NONFORMED METAL-INSULATOR-METAL ELECTRON EMITTERS USING THE NEAR-THRESHOLD DRIVE METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2201-2205

Authors: ANCONA MG
Citation: Mg. Ancona, THERMOMECHANICAL ANALYSIS OF FAILURE OF METAL FIELD EMITTERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2206-2214

Authors: STEIGERWALD JM MURARKA SP HO J GUTMANN RJ DUQUETTE DJ
Citation: Jm. Steigerwald et al., MECHANISMS OF COPPER REMOVAL DURING CHEMICAL-MECHANICAL POLISHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2215-2218

Authors: CHAU TT CHAN KW KAO KC
Citation: Tt. Chau et al., CHARGES AND DEFECTS IN SIO2 SI SYSTEMS AFTER EXPOSURE TO MICROWAVE PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2219-2225

Authors: KRAFT R KRISHNAN S
Citation: R. Kraft et S. Krishnan, GATE OXIDE LOSS AT THE PERIPHERY OF A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR RESULTING FROM A POLYSILICON GATE ETCH WITH A HELICON ETCH TOOL, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2226-2229

Authors: SANCHEZ JR ALDAO CM WEAVER JH
Citation: Jr. Sanchez et al., ANALYSIS AND MONTE-CARLO SIMULATIONS OF SPONTANEOUS ETCHING - CL-SI(100)-2X1, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2230-2233

Authors: PAUL DJ LAW VJ JONES GAC
Citation: Dj. Paul et al., SI1-XGEX PULSED PLASMA-ETCHING USING CHF3 AND H-2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2234-2237

Authors: LIU LM LINDAUER G ALEXANDER WB HOLLOWAY PH
Citation: Lm. Liu et al., SURFACE PREPARATION OF ZNSE BY CHEMICAL METHODS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2238-2244

Authors: VANHASSEL JG HEYKER HC KWASPEN JJM
Citation: Jg. Vanhassel et al., INFLUENCE OF IN-SITU ARGON CLEANING OF GAAS ON SCHOTTKY DIODES AND METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2245-2249

Authors: TANAKA N LOPEZ M MATSUYAMA I ISHIKAWA T
Citation: N. Tanaka et al., ETCHING TEMPERATURE-DEPENDENCE OF THE SURFACE-COMPOSITION AND RECONSTRUCTION FOR CL-2-ETCHED GAAS-LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2250-2254

Authors: SNYDER PG IANNO NJ WIGERT B PITTAL S JOHS B WOOLLAM JA
Citation: Pg. Snyder et al., SPECTROSCOPIC ELLIPSOMETRIC MONITORING OF ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF GAAS AND ALGAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2255-2259

Authors: LABANDA JGC BARNETT SA HULTMAN L
Citation: Jgc. Labanda et al., EFFECTS OF GLANCING-ANGLE ION-BOMBARDMENT ON GAAS(001), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2260-2268

Authors: SADRA K LIN CH MEESE JM
Citation: K. Sadra et al., FLUX MASKING AND THICKNESS UNIFORMITY IN MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2269-2275

Authors: HUGHES PJ LI EH WEISS BL
Citation: Pj. Hughes et al., THERMAL-STABILITY OF ALGAAS GAAS SINGLE-QUANTUM-WELL STRUCTURES USINGPHOTOREFLECTANCE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2276-2283

Authors: YATER JA PLAUT AS KASH K LIN PSD FLOREZ LT HARBISON JP DAS SR LEBRUN L
Citation: Ja. Yater et al., PHOTOLUMINESCENCE OF QUANTUM DOTS FABRICATED USING TUNGSTEN STRESSORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2284-2288
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