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Results: 1-25/802

Authors: KNALL J ROMANO LT KRUSOR BS BIEGELSEN DK BRINGANS RD
Citation: J. Knall et al., THREADING DISLOCATIONS IN GAAS GROWN WITH FREE SIDEWALLS ON SI MESAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3069-3074

Authors: PETERS MG THIBEAULT BJ YOUNG DB GOSSARD AC COLDREN LA
Citation: Mg. Peters et al., GROWTH OF BERYLLIUM DOPED ALXGA1-XAS GAAS MIRRORS FOR VERTICAL-CAVITYSURFACE-EMITTING LASERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3075-3083

Authors: WADA Y WADA K
Citation: Y. Wada et K. Wada, NEARLY IDEAL CHARACTERISTICS OF GAAS METAL-INSULATOR-SEMICONDUCTOR DIODES BY ATOMIC LAYER PASSIVATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3084-3089

Authors: SCIMECA T WATANABE Y MAEDA F BERRIGAN R OSHIMA M
Citation: T. Scimeca et al., SURFACE OXIDATION SF SELENIUM TREATED GAAS(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3090-3094

Authors: JIMENEZ I SACEDON JL
Citation: I. Jimenez et Jl. Sacedon, SI-INDIFFUSION AND O-OUTDIFFUSION PROCESSES AT SI SIO2/GAAS-OXIDES/GAAS STRUCTURES - IMPLICATIONS IN SIO2 FORMATION AND GAAS REGROWTH/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3095-3102

Authors: WANG DP
Citation: Dp. Wang, ELECTROREFLECTANCE OF AG GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3103-3106

Authors: TAKENAKA H OISHI Y UEDA D
Citation: H. Takenaka et al., DEAD-TIME-FREE SELECTIVE DRY-ETCHING OF GAAS ALGAAS USING BCL3/CHF3 PLASMA/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3107-3111

Authors: YAMADA H
Citation: H. Yamada, CONTINUOUS ULTRA-DRY PROCESS FOR ENHANCING THE RELIABILITY OF ULTRATHIN SILICON-OXIDE FILMS IN METAL-OXIDE SEMICONDUCTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3112-3117

Authors: VENTZEK PLG GRAPPERHAUS M KUSHNER MJ
Citation: Plg. Ventzek et al., INVESTIGATION OF ELECTRON SOURCE AND ION FLUX UNIFORMITY IN HIGH PLASMA-DENSITY INDUCTIVELY-COUPLED ETCHING TOOLS USING 2-DIMENSIONAL MODELING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3118-3137

Authors: LABUN AH
Citation: Ah. Labun, PROFILE SIMULATION OF ELECTRON-CYCLOTRON-RESONANCE PLANARIZATION OF AN INTERLEVEL DIELECTRIC, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3138-3144

Authors: HOUBERTZ R MEMMERT U BEHM RJ
Citation: R. Houbertz et al., MORPHOLOGY OF ANODICALLY ETCHED SI(111) SURFACES - A STRUCTURAL COMPARISON OF NH4F VERSUS HF ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3145-3148

Authors: TSAI JY OSBURN CM CANOVAI CA
Citation: Jy. Tsai et al., SOLID SOURCE DIFFUSION FROM AGGLOMERATING SILICIDE SOURCES .2. EXPERIMENTAL RESULTS AND ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3149-3159

Authors: UGAJIN R ISHIBASHI A MORI Y
Citation: R. Ugajin et al., ADVANCED FABRICATION TECHNIQUES OF 3-DIMENSIONAL MICROSTRUCTURES FOR FUTURE ELECTRONIC DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3160-3165

Authors: ARCHER A HETRICK JM NAYFEH MH ADESIDA I
Citation: A. Archer et al., NANOFABRICATION ON ELECTRON-BEAM RESIST USING SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3166-3170

Authors: SCHEER E VONLOHNEYSEN H HEIN H
Citation: E. Scheer et al., FABRICATION OF NOBLE-METAL NANOCONSTRICTIONS AND OBSERVATION CONDUCTANCE FLUCTUATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3171-3175

Authors: WESTRA KL THOMSON DJ
Citation: Kl. Westra et Dj. Thomson, ATOMIC-FORCE MICROSCOPE TIP RADIUS NEEDED FOR ACCURATE IMAGING OF THIN-FILM SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3176-3181

Authors: FEINERMAN AD CREWE DA CREWE AV
Citation: Ad. Feinerman et al., MICROFABRICATION OF ARRAYS OF SCANNING ELECTRON-MICROSCOPES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3182-3186

Authors: ALBREKTSEN O SALEMINK HWM MORCH KA THOLEN AR
Citation: O. Albrektsen et al., RELIABLE TIP PREPARATION FOR HIGH-RESOLUTION SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3187-3190

Authors: HAGMANN MJ
Citation: Mj. Hagmann, REDUCED EFFECTS OF LASER ILLUMINATION ON FIELD-EMISSION DUE TO THE FINITE DURATION OF QUANTUM TUNNELING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3191-3195

Authors: NEW RMH PEASE RFW WHITE RL
Citation: Rmh. New et al., SUBMICRON PATTERNING OF THIN COBALT FILMS FOR MAGNETIC STORAGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3196-3201

Authors: POHL J MALANG EU SCHEELE B KOHLER J LUXSTEINER MC BUCHER E
Citation: J. Pohl et al., STRUCTURE OF FE DELTA-MN SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3202-3207

Authors: PAN W DESU SB
Citation: W. Pan et Sb. Desu, REACTIVE ION ETCHING OF RUO2, THIN-FILMS USING THE GAS-MIXTURE O-2 CF3CFH2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3208-3213

Authors: EFTEKHARI G
Citation: G. Eftekhari, EFFECTS OF SULFUR PASSIVATION AND RAPID THERMAL ANNEALING ON THE ELECTRICAL-PROPERTIES OF INP METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY DIODES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3214-3217

Authors: BALOOCH M HAMZA AV
Citation: M. Balooch et Av. Hamza, SIC MICROCOMPONENTS VIA REACTION OF C-60 WITH SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3218-3219

Authors: LARKINS EC THADEN H BETSCHE H EICHIN G RALSTON JD
Citation: Ec. Larkins et al., ELIMINATION OF LONG-TERM CALIBRATION DRIFT IN MOLECULAR-BEAM EPITAXY BY COOLING THE SOURCE FLANGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3220-3222
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