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Results: 1-25/404

Authors: DONIG F FELTZ A KULAKOV M HESSEL HE MEMMERT U BEHM RJ
Citation: F. Donig et al., GAS-PHASE ETCHING OF SI(111)-(7X7) SURFACES BY OXYGEN OBSERVED BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 1955-1961

Authors: JIANG JC FAYNBERG V WHITE RC ALLEN PK
Citation: Jc. Jiang et al., FABRICATION OF MICROMACHINED SILICON TIP TRANSDUCER FOR TACTILE SENSING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 1962-1967

Authors: ELST K VANDERVORST W ALAY J SNAUWAERT J HELLEMANS L
Citation: K. Elst et al., INFLUENCE OF OXYGEN ON THE FORMATION OF RIPPLES ON SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 1968-1981

Authors: FUKUDA T HIROTA Y
Citation: T. Fukuda et Y. Hirota, SCANNING-TUNNELING-MICROSCOPY STUDY OF DEOXYGENATED AND DEIONIZED WATER RINSED GAAS(111)-B SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 1982-1986

Authors: KAGESHIMA M YAMADA H NAKAYAMA K SAKAMA H KAWAZU A FUJII T SUZUKI M
Citation: M. Kageshima et al., DEVELOPMENT OF AN ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPE FOR INVESTIGATIONS OF SEMICONDUCTOR SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 1987-1991

Authors: SILVA LA LAITENBERGER P PALMER RE
Citation: La. Silva et al., NANOFABRICATION OF METAL STRUCTURES IN GOLD-FILMS DEPOSITED ON MICA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 1992-1999

Authors: WANG H JING J CHU HT HENRIKSEN PN
Citation: H. Wang et al., REARRANGEMENT OF AU(111) SURFACE AS A RESULT OF SCANNING WITH SCANNING TUNNELING ATOMIC-FORCE MICROSCOPES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2000-2005

Authors: NOLL JD COOPER JB MYRICK ML
Citation: Jd. Noll et al., ANALYSIS OF HIGHLY ORDERED PYROLYTIC-GRAPHITE STEP DEFECTS VIA SCANNING TUNNELING MICROSCOPE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2006-2011

Authors: HARRIOTT LR
Citation: Lr. Harriott, DIGITAL SCAN MODEL FOR FOCUSED ION-BEAM-INDUCED GAS ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2012-2015

Authors: YAMAGUCHI A SHIBATA M HASHINAGA T
Citation: A. Yamaguchi et al., TRANSMISSION ELECTRON-MICROSCOPY SPECIMEN PREPARATION TECHNIQUE USINGFOCUSED ION-BEAM FABRICATION - APPLICATION TO GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2016-2020

Authors: OVERWIJK MHF VANDENHEUVEL FC BULLELIEUWMA CWT
Citation: Mhf. Overwijk et al., NOVEL SCHEME FOR THE PREPARATION OF TRANSMISSION ELECTRON-MICROSCOPY SPECIMENS WITH A FOCUSED ION-BEAM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2021-2024

Authors: CHOQUETTE KD FREUND RS HONG M LUFTMAN HS CHU SNG MANNAERTS JP WETZEL RC
Citation: Kd. Choquette et al., HYDROGEN PLASMA PROCESSING OF GAAS AND ALGAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2025-2032

Authors: LU ZH BRYSKIEWICZ B MCCAFFREY J WASILEWSKI Z GRAHAM MJ
Citation: Zh. Lu et al., ULTRAVIOLET-OZONE OXIDATION OF GAAS(100) AND INP(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2033-2037

Authors: MELVILLE DL SIMMONS JG THOMPSON DA
Citation: Dl. Melville et al., IDENTIFICATION OF VOLATILE PRODUCTS IN LOW-PRESSURE HYDROCARBON ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION ETCHING OF INP AND GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2038-2045

Authors: NAKANO T GIAPIS KP GOTTSCHO RA LEE TC SADEGHI N
Citation: T. Nakano et al., ION VELOCITY DISTRIBUTIONS IN HELICON WAVE PLASMAS - MAGNETIC-FIELD AND PRESSURE EFFECTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2046-2056

Authors: KAWAKAMI Y OHNAKADO T TSUKA M TOKUDERA S ITO Y FUJITA S FUJITA S
Citation: Y. Kawakami et al., P-TYPE ZNSE GROWN BY MOLECULAR-BEAM EPITAXY WITH REMOTE MICROWAVE PLASMA OF N2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2057-2061

Authors: HOSCHL P MORAVEC P FRANC J GRILL R MILEV P BELAS E
Citation: P. Hoschl et al., GALVANOMAGNETIC STUDY OF P-HG1-XCDXTE PASSIVATED SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2062-2066

Authors: GOPINATH V SALBERT GT GROTJOHN TA REINHARD DK
Citation: V. Gopinath et al., ELECTRON-CYCLOTRON-RESONANCE SPUTTER REMOVAL OF SIO2 ON SILICON-WAFERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2067-2070

Authors: ARNOLD JC GRAY DC SAWIN HH
Citation: Jc. Arnold et al., INFLUENCE OF REACTANT TRANSPORT ON FLUORINE REACTIVE ION ETCHING OF DEEP TRENCHES IN SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2071-2080

Authors: ROJAS S ZANOTTI L BORGHESI A SASSELLA A PIGNATEL GU
Citation: S. Rojas et al., CHARACTERIZATION OF SILICON DIOXIDE AND PHOSPHOSILICATE GLASS DEPOSITED FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2081-2089

Authors: WU THT OBRIEN K HEMMES DG
Citation: Tht. Wu et al., COMPARISON OF PASSIVATION FILMS - THE EFFECT OF THERMAL CYCLES AND COMPARISON OF PHOSPHORUS-DOPED OXIDE-FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2090-2095

Authors: CONRAD KA SAMPSON RK MASSOUD HZ IRENE EA
Citation: Ka. Conrad et al., ELLIPSOMETRIC MONITORING AND CONTROL OF THE RAPID THERMAL-OXIDATION OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2096-2101

Authors: LI M YAKOVLEV VA WALL J IRENE EA
Citation: M. Li et al., ELLIPSOMETRIC DETERMINATION OF THE THICKNESS AND REFRACTIVE-INDEX OF SILICON FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2102-2106

Authors: JAIN A KODAS TT JAIRATH R HAMPDENSMITH MJ
Citation: A. Jain et al., SELECTIVE AND BLANKET COPPER CHEMICAL-VAPOR-DEPOSITION FOR ULTRA-LARGE-SCALE INTEGRATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2107-2113

Authors: MORITZUMI K BROERS AN
Citation: K. Moritzumi et An. Broers, TOLERANCE ON ALIGNMENT ERROR IN GHOST PROXIMITY EFFECT CORRECTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2114-2120
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