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Authors: DESCHLER M BECCARD R WACHTENDORF B SCHMITZ D JUERGENSEN H
Citation: M. Deschler et al., EFFICIENT AND UNIFORM PRODUCTION OF III-NITRIDE FILMS BY MULTIWAFER MOVPE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 1-7

Authors: DAUDIN B WIDMANN F FEUILLET G ADELMANN C SAMSON Y ARLERY M ROUVIERE JL
Citation: B. Daudin et al., 2D 3D GROWTH OF GAN BY MOLECULAR-BEAM EPITAXY - TOWARDS GAN QUANTUM DOTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 8-11

Authors: MEYER BK AKASAKI I GIL B MORKOC H
Citation: Bk. Meyer et al., UNTITLED - PREFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 9-9

Authors: EINFELDT S BIRKLE U THOMAS C FEHRER M HEINKE H HOMMEL D
Citation: S. Einfeldt et al., PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY GROWTH OF GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 12-15

Authors: GROSS M HENN G SCHRODER H
Citation: M. Gross et al., GROWTH OF GAN AND ALN THIN-FILMS BY LASER-INDUCED MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 16-19

Authors: COLE D LUNNEY JG
Citation: D. Cole et Jg. Lunney, GAN THIN-FILMS DEPOSITED BY PULSED-LASER ABLATION IN NITROGEN AND AMMONIA REACTIVE ATMOSPHERES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 20-24

Authors: LIN CF CHENG HC FENG MS CHI GC
Citation: Cf. Lin et al., CHARACTERIZATION OF GAN EPITAXIAL LAYERS ON SIC SUBSTRATES WITH ALXGA1-XN BUFFER LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 25-28

Authors: POTIN V RUTERANA P NOUET G
Citation: V. Potin et al., INITIAL-STAGES OF GROWTH OF GAN OVER (0001)AL2O3 SUBSTRATE USING MBE - A CRYSTALLOGRAPHIC ANALYSIS OF THE DEFECTS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 29-31

Authors: LEVAILLANT YM BISARO R OLIVIER J DURAND O DUBOZ JY RUFFENACHCLUR S BRIOT O GIL B AULOMBARD RL
Citation: Ym. Levaillant et al., CHARACTERIZATION OF AIN BUFFER LAYERS ON (0001)-SAPPHIRE SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 32-37

Authors: BLANT AV CHENG TS JEFFS NJ FOXON CT BAILEY C HARRISON PG DENT AJ MOSSELMANS JFW
Citation: Av. Blant et al., EXAFS STUDIES OF PLASMA-ENHANCED MBE GROWN GROUP III-NITRIDES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 38-41

Authors: BARATON MI CARLSON G GONSALVES KE
Citation: Mi. Baraton et al., DRIFTS CHARACTERIZATION OF A NANOSTRUCTURED GALLIUM NITRIDE POWDER AND ITS INTERACTIONS WITH ORGANIC-MOLECULES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 42-45

Authors: DWILINSKI R DORADZINSKI R GARCZYNSKI J SIERZPUTOWSKI L BARANOWSKI JM KAMINSKA M
Citation: R. Dwilinski et al., EXCITON PHOTOLUMINESCENCE OF GAN BULK CRYSTALS GROWN BY THE AMMONO METHOD, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 46-49

Authors: LOOK DC
Citation: Dc. Look, ELECTRICAL-TRANSPORT PROPERTIES OF III-NITRIDES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 50-56

Authors: ALVES JLA ALVES HWL DEOLIVEIRA C VALADAO RDSC LEITE JR
Citation: Jla. Alves et al., ZINCBLENDE GAN - AB-INITIO CALCULATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 57-60

Authors: ROUVIERE JL ARLERY M DAUDIN B FEUILLET G BRIOT O
Citation: Jl. Rouviere et al., TRANSMISSION ELECTRON-MICROSCOPY STRUCTURAL CHARACTERIZATION OF GAN LAYERS GROWN ON (0001)SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 61-71

Authors: RUTERANA P VERMAUT P POTIN V NOUET G BOTCHKAREV A SALVADOR A MORKOC H
Citation: P. Ruterana et al., THE STRUCTURE OF GAN LAYERS GROWN ON SIC AND SAPPHIRE BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 72-75

Authors: CHERNS D YOUNG WT PONCE FA
Citation: D. Cherns et al., CHARACTERIZATION OF DISLOCATIONS, NANOPIPES AND INVERSION DOMAINS IN GAN BY TRANSMISSION ELECTRON-MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 76-81

Authors: KIM HS LEE YH YEOM GY LEE JW KIM TI
Citation: Hs. Kim et al., EFFECTS OF INDUCTIVELY-COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GAN AND OHMIC CONTACT FORMATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 82-87

Authors: WIESER N KLOSE M DASSOW R ROHR GC SCHOLZ F OFF J
Citation: N. Wieser et al., ON THE ROLE OF THERMAL STRAIN FOR MICRO-RAMAN DETERMINATION OF CARRIER CONCENTRATIONS IN MOVPE-N-GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 88-92

Authors: PECZ B DIFORTEPOISSON MA TOTH L RADNOCZI G HUHN G PAPAIOANNOU V STOEMENOS J
Citation: B. Pecz et al., TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 93-96

Authors: LEROUX M BEAUMONT B GRANDJEAN N LORENZINI P HAFFOUZ S VENNEGUES P MASSIES J GIBART P
Citation: M. Leroux et al., LUMINESCENCE AND REFLECTIVITY STUDIES OF UNDOPED, N-DOPED AND P-DOPEDGAN ON (0001)SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 97-104

Authors: MENSCHING B LIU C RAUSCHENBACH B KORNITZER K RITTER W
Citation: B. Mensching et al., CHARACTERIZATION OF CA AND C IMPLANTED GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 105-108

Authors: KAUFMANN U MERZ C SANTIC B NIEBUHR R OBLOH H BACHEM KH
Citation: U. Kaufmann et al., ORIGIN OF THE Q = 11 MEV BOUND EXCITON IN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 109-112

Authors: GODLEWSKI M BERGMAN JP MONEMAR B ROSSNER U LANGER R BARSKI A
Citation: M. Godlewski et al., OPTICAL-PROPERTIES OF GAN EPILAYERS GROWN ON SI(111) AND SI(001) SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 113-116

Authors: SKROMME BJ
Citation: Bj. Skromme, OPTICAL AND MAGNETOOPTICAL CHARACTERIZATION OF HETEROEPITAXIAL GALLIUM NITRIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 117-125
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