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Results: 1-25/361

Authors: JAKUBOWICZ A
Citation: A. Jakubowicz, CHARACTERIZATION OF SEMICONDUCTOR-LASER DIODES BY BEAM INJECTION TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 1-7

Authors: KITTLER M SEIFERT W
Citation: M. Kittler et W. Seifert, EBIC DEFECT CHARACTERIZATION - STATE OF UNDERSTANDING AND PROBLEMS OFINTERPRETATION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 8-13

Authors: PIQUERAS J FERNANDEZ P MENDEZ B
Citation: J. Piqueras et al., CONTAINING PAPERS PRESENTED AT THE 4TH INTERNATIONAL WORKSHOP ON BEAMINJECTION ASSESSMENT OF DEFECTS IN SEMICONDUCTORS (BIADS 96), 3-6 JUNE 1996, EL ESCORIAL, SPAIN - FOREWORD, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 9-9

Authors: HOLT DB RAZA B WOJCIK A
Citation: Db. Holt et al., EBIC STUDIES OF GRAIN-BOUNDARIES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 14-23

Authors: SCHREIBER J HILDEBRANDT S UNIEWSKI H BECHSTEIN V
Citation: J. Schreiber et al., INVESTIGATION OF THE LOW-TEMPERATURE CL CONTRASTS OF DISLOCATIONS IN COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 24-31

Authors: BONDARENKO I KIRK H KONONCHUK O ROZGONYI G
Citation: I. Bondarenko et al., CONVENTIONAL EBIC VERSUS MOS EBIC STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SI AND SOI/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 32-37

Authors: MENDEZ B PIQUERAS J DUTTA PS DIEGUEZ E
Citation: B. Mendez et al., CATHODOLUMINESCENCE MICROSCOPY OF DOPED GASB CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 38-42

Authors: MAZZER M GRUNBAUM E BARNHAM KWJ BARNES J GRIFFIN PR HOLT DB HUTCHISON JL NORMAN AG DAVID JPR ROBERTS JS GREY R
Citation: M. Mazzer et al., STUDY OF MISFIT DISLOCATIONS BY EBIC, CL AND HRTEM IN GAAS INGAAS LATTICE-STRAINED MULTIQUANTUM-WELL P-I-N SOLAR-CELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 43-51

Authors: RAU EI YAKIMOV EB
Citation: Ei. Rau et Eb. Yakimov, E-BEAM TOMOGRAPHY OF PLANAR SEMICONDUCTOR STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 52-56

Authors: ZOZIME A CASTAING J
Citation: A. Zozime et J. Castaing, EFFECT OF HYDROGENATION ON THE PROPERTIES OF EXTENDED DEFECTS IN SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 57-62

Authors: KNOBLOCH K ALEXANDER H
Citation: K. Knobloch et H. Alexander, BEHAVIOR OF AN AMPHOTERIC DEFECT UNDER STANDARD DLTS AND BEAM INJECTION DLTS, RESPECTIVELY, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 63-66

Authors: BREESE MBH
Citation: Mbh. Breese, A REVIEW OF ION-BEAM-INDUCED CHARGE MICROSCOPY FOR INTEGRATED-CIRCUITANALYSIS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 67-76

Authors: PANEPINTO L ZEIMER U SEIFERT W SEIBT M BUGGE F WEYERS M SCHROTER W
Citation: L. Panepinto et al., TEMPERATURE-DEPENDENT EBIC AND DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF DIFFERENT TYPES OF MISFIT-DISLOCATIONS AT MOVPE GROWN GAAS INGAAS/GAAS-SINGLE-QUANTUM WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 77-81

Authors: PISTOL ME HESSMAN D LINDAHL J MONTELIUS L SAMUELSON L
Citation: Me. Pistol et al., STM-BASED LUMINESCENCE SPECTROSCOPY ON SINGLE QUANTUM DOTS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 82-87

Authors: HENNING AK HOCHWITZ T
Citation: Ak. Henning et T. Hochwitz, SCANNING PROBE MICROSCOPY FOR 2-D SEMICONDUCTOR DOPANT PROFILING AND DEVICE FAILURE ANALYSIS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 88-98

Authors: DONOLATO C
Citation: C. Donolato, MODELING ELECTROSTATIC SCANNING FORCE MICROSCOPY OF SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 99-104

Authors: EBOTHE J CABARROCAS PRI GODET C EQUER B
Citation: J. Ebothe et al., DEPOSITION PARAMETERS AND SURFACE-TOPOGRAPHY OF A-SI-H THIN-FILMS OBTAINED BY THE RF GLOW-DISCHARGE PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 105-109

Authors: FARVACQUE JL
Citation: Jl. Farvacque, THEORETICAL ASPECTS OF THE MINORITY-CARRIER RECOMBINATION AT DISLOCATIONS IN SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 110-121

Authors: TAMAYO J GARCIA R
Citation: J. Tamayo et R. Garcia, FRICTION FORCE MICROSCOPY CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 122-126

Authors: MAEDA K UOTA M MERA Y
Citation: K. Maeda et al., SPATIALLY-RESOLVED DEEP-LEVEL TRANSIENT SPECTROSCOPY USING A SCANNINGTUNNELING MICROSCOPE, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 127-132

Authors: JAHN U MENNIGER J HEY R JENICHEN B RUNGE E GRAHN HT
Citation: U. Jahn et al., LATERAL VARIATIONS OF THE QUANTUM-WELL CONFINEMENT ENERGY REFLECTED BY SEM-CATHODOLUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 133-140

Authors: SEKIGUCHI T SUMINO K RADZIMSKI ZJ ROZGONYI GA
Citation: T. Sekiguchi et al., CATHODOLUMINESCENCE AND EBIC STUDY ON MISFIT DISLOCATIONS IN SIGE SI HETEROSTRUCTURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 141-145

Authors: KRAWCZYK SK GENDRY M KLINGELHOFER C VENET T BUCHHEIT M BLANCHET R HOLLINGER G
Citation: Sk. Krawczyk et al., APPLICATION OF SPECTRALLY RESOLVED SCANNING PHOTOLUMINESCENCE TO ASSESS RELAXATION PROCESSES OF INGAAS AND INALAS LAYERS STRAINED IN COMPRESSION AND TENSION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 146-152

Authors: STEMMER M WAGNER G MARTINUZZI S
Citation: M. Stemmer et al., LBIC CHARACTERIZATION OF LPE SI LAYERS DEPOSITED ON MULTICRYSTALLINE SI SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 153-156

Authors: POLIGNANO ML CAZZANIGA F SABBADINI A QUEIROLO G CACCIATO A DIBARTOLO A
Citation: Ml. Polignano et al., COMPARISON AMONG LIFETIME TECHNIQUES FOR THE DETECTION OF TRANSITION-METAL CONTAMINATION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 157-163
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