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Results: 1-25/337

Authors: KELLY MJ
Citation: Mj. Kelly, ARE QUANTUM SEMICONDUCTOR-DEVICES DELIVERING, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 1-6

Authors: TEMMYO J KURAMOCHI E SUGO M NISHIYA T NOTZEL R TAMAMURA T
Citation: J. Temmyo et al., SELF-ORGANIZED INGAAS QUANTUM DISK LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 7-11

Authors: HENINI M SZWEDA R
Citation: M. Henini et R. Szweda, PROCEEDINGS OF THE FIRST INTERNATIONAL-CONFERENCE ON LOW-DIMENSIONAL STRUCTURES AND DEVICES, 8-10 MAY 1995, SINGAPORE - PREFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 10-11

Authors: CHEN YH WOODHEAD J DAVID JPR BUTTON CC HOPKINSON M ROBERTS JS SALE TE ROBSON PN
Citation: Yh. Chen et al., VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS AT LAMBDA-LESS-THAN-650 NM, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 12-16

Authors: VAYA P CHUA SJ KUMAR K
Citation: P. Vaya et al., OPTIMIZED DESIGN PARAMETERS OF INGAAS-INP QUANTUM-WELL LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 17-23

Authors: KIM K CHOI YW KWON OK LEE EH
Citation: K. Kim et al., SWITCHING CHARACTERISTICS OF NONBIASED OPTICAL BISTABILITY IN ASYMMETRIC FABRY-PEROT S-SEEDS MADE OF EXTREMELY SHALLOW QUANTUM-WELL STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 24-28

Authors: YARN KF WANG YH CHEN MS
Citation: Kf. Yarn et al., BARRIER-MODULATED GAAS INGAAS QUANTUM-WELL OPTOELECTRONIC SWITCH (QWOES) PREPARED BY MOLECULAR-BEAM EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 29-33

Authors: RAZEGHI M ELIASHEVICH I DIAZ J YI HJ KIM S ERDTMANN M WU D WANG LJ
Citation: M. Razeghi et al., HIGH-POWER ALUMINUM-FREE INGAASP GAAS PUMPING DIODE-LASERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 34-41

Authors: DAVID JPR SALE TE PABLA AS RODRIQUEZGIRONES PJ WOODHEAD J GREY R REES GJ ROBSON PN SKOLNICK MS
Citation: Jpr. David et al., PHOTOLUMINESCENCE OF PIEZOELECTRIC STRAINED INGAAS-GAAS MULTIQUANTUM-WELL P-I-N STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 42-46

Authors: GUREVICH SA ZAKHEIM DA SOLOVEV SA FEDOROVICH AE KOMIN VV NESTEROV SI KOCHNEV IV SCOPINA VI
Citation: Sa. Gurevich et al., REACTIVE ION ETCHED QUANTUM-WIRE STRUCTURES FOR LASER APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 47-50

Authors: RAJAGOPAL AK BUOT FA
Citation: Ak. Rajagopal et Fa. Buot, QUANTUM TRANSPORT AND NONLINEAR DYNAMICS OF INTERACTING QUANTIZED-FIELDS AND APPLICATIONS TO NANOELECTRONICS AND OPTOELECTRONICS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 51-55

Authors: CHI GC JUANG C
Citation: Gc. Chi et C. Juang, TOP SAWTOOTH GRATING FOR GAAS ALGAAS QUANTUM-WELL IR DETECTORS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 56-58

Authors: GOBEL R STEINHAGEN F JANNING H
Citation: R. Gobel et al., HYBRIDE - VPE EMBEDDING OF INALGAAS LASER STRUCTURES WITH SI INP-FE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 59-63

Authors: KWON OK KIM K CHOI YW LEE EH
Citation: Ok. Kwon et al., NOISE CHARACTERISTICS OF ELECTRO-ABSORPTIVE LOGIC DEVICE UTILIZING ASYMMETRIC FABRY-PEROT ETALON STRUCTURE IN HIGH OPTICAL POWER, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 64-67

Authors: YOSHINO K MATSUSHIMA Y TIONGPALISOC S OHMORI K HIRAMATSU M
Citation: K. Yoshino et al., TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN ZNSE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 68-71

Authors: TANG XH JIN CS
Citation: Xh. Tang et Cs. Jin, SATURATION OF THE NONLINEAR ABSORPTION IN N-I-P-I MULTIPLE-QUANTUM-WELL STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 72-75

Authors: TETYORKIN VV SIZOV FF SVECHNIKOV SV GOLOVIN VG
Citation: Vv. Tetyorkin et al., IV-VI COMPOSITIONAL MQWS AND SLS FOR OPTOELECTRONIC APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 76-79

Authors: HAYDEN RK WOODS RC
Citation: Rk. Hayden et Rc. Woods, SINGLE-HETEROJUNCTION STRUCTURES FOR ACOUSTIC CHARGE-TRANSFER DEVICES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 80-86

Authors: SHENG HY CHUA SJ
Citation: Hy. Sheng et Sj. Chua, NEW HOLE NEGATIVE DIFFERENTIAL RESISTANCE STRAINED-LAYER DEVICE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 87-89

Authors: VANBESIEN O LIPPENS D
Citation: O. Vanbesien et D. Lippens, DUAL-BRANCH ELECTRON WAVE-GUIDE COUPLERS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 90-96

Authors: WALKER R GURARY AI YUAN C ZAWADZKI P MOY K SALAGAJ T THOMPSON AG KROLL WJ STALL RA SCHUMAKER NE
Citation: R. Walker et al., NOVEL HIGH-TEMPERATURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION VERTICAL ROTATING-DISK REACTOR WITH MULTIZONE HEATING FOR GAN AND RELATED MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 97-101

Authors: SCHMITZ D DESCHLER M SCHULTE F JUERGENSEN H
Citation: D. Schmitz et al., STATE-OF-THE-ART CONTROL OF GROWTH OF SUPERLATTICES AND QUANTUM-WELLS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 102-108

Authors: YOON SF MIAO YB RADHAKRISHNAN K SWAMINATHAN S
Citation: Sf. Yoon et al., OPTICAL AND STRUCTURAL CHARACTERIZATIONS FOR OPTIMIZED GROWTH OF IN0.52AL0.48AS ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 109-116

Authors: ULLRICH B EZUMI H KEITOKU S KOBAYASHI T
Citation: B. Ullrich et al., LUMINESCENCE PROPERTIES OF P-TYPE THIN CDS FILMS PREPARED BY LASER-ABLATION, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 117-119

Authors: ILIN VI MUSIKHIIN SF BAKUEVA LG RABIZO OV RYKOV SA
Citation: Vi. Ilin et al., QUANTUM-SIZE LAYERED PBS C STRUCTURES DEPOSITED BY PULSED-LASER EVAPORATION IN VACUUM/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 120-124
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