Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 1-25/335

Authors: VESCAN L
Citation: L. Vescan, SELECTIVE EPITAXIAL-GROWTH OF SIGE ALLOYS - INFLUENCE OF GROWTH-PARAMETERS ON FILM PROPERTIES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 1-8

Authors: CORNI F TONINI R BALBONI R VESCAN L
Citation: F. Corni et al., RECRYSTALLIZATION OF STRAINED GEXSI1-X SI LAYERS WITH VARIOUS GE GRADIENTS AND IN THE PRESENCE OF IMPURITIES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 9-13

Authors: FORNARI R
Citation: R. Fornari, PAPERS PRESENTED AT THE 2ND INTERNATIONAL WORKSHOP ON EXPERT EVALUATION AND CONTROL OF COMPOUND SEMICONDUCTOR-MATERIALS AND TECHNOLOGIES, 18-20-MAY-1994, PARMA, ITALY - PREFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 13-13

Authors: RINGEISEN F STEINMETZ D VAN S BOLMONT D KOULMANN JJ
Citation: F. Ringeisen et al., GROWTH OF A GE SI/GE(100) HETEROSTRUCTURE BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4 GASES - PHOTOEMISSION AND LOW-ENERGY-ELECTRON DIFFRACTION STUDIES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 14-17

Authors: DONECKER J GERHARDT A WOLLWEBER J
Citation: J. Donecker et al., OPTICAL DETERMINATION OF THE COMPOSITION OF BULK SIGE MONOCRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 18-20

Authors: BERNARDI S
Citation: S. Bernardi, NEW DEVELOPMENTS IN THE LIQUID-PHASE EPITAXY OF HG1-XCDXTE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 21-28

Authors: GUHA S CHENG H DEPUYDT JM HAASE MA QIU J
Citation: S. Guha et al., FAILURE MECHANISMS IN II-VI BLUE-GREEN EMITTERS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 29-35

Authors: CHAVADA FR GARG AK KUMAR S GUPTA SC
Citation: Fr. Chavada et al., A NEW SUBSTRATE HOLDER FOR LIQUID-PHASE EPITAXY GROWTH OF HG1-XCDXTE FROM HG-RICH SOLUTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 36-38

Authors: LEMOINE D KHELLADI KH CASTAING O BENHLAL J QUEMERAIS A POLLINI I TRIBOULET R GRANGER R
Citation: D. Lemoine et al., EFFECT OF CHEMICAL TREATMENTS ON THE COMPOSITION OF HGZNTE SURFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 39-42

Authors: KACIULIS S MATTOGNO G MARINI ME CESQUI F ALFUSO S MERCURI A
Citation: S. Kaciulis et al., CHARACTERIZATION STUDY OF CDS PASSIVATION LAYERS ON HGXCD1-XTE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 43-46

Authors: WURM P HAGEALI M KOEBEL JM SIFFERT P
Citation: P. Wurm et al., STUDY OF THE PHOTODECAY IN CDTE X-RAY-DETECTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 47-50

Authors: RINGLE MD GRILLO DC FAN Y HE L HAN J GUNSHOR RL SALOKATVE A JEON H HOVINEN M NURMIKKO AV HUA GC OTSUKA N
Citation: Md. Ringle et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF II-VI BLUE-GREEN LASER-DIODES HAVING CONTINUOUS-WAVE OPERATION AT ROOM-TEMPERATURE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 51-54

Authors: LOVERGINE N LEO G MANCINI AM ROMANATO F DRIGO AV GIANNINI C TAPFER L
Citation: N. Lovergine et al., LATTICE STRAIN RELAXATION OF ZNS LAYERS GROWN BY VAPOR-PHASE EPITAXY ON (100)GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 55-60

Authors: HUBER AM BRIOT N
Citation: Am. Huber et N. Briot, MATERIAL QUALITY ASSESSMENT OF EPITAXIAL LAYERS OF ZNSE AND RELATED-COMPOUNDS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 61-64

Authors: TATSUMI M HOSOKAWA Y IWASAKI T TOYODA N FUJITA K
Citation: M. Tatsumi et al., GROWTH AND CHARACTERIZATION OF III-V MATERIALS GROWN BY VAPOR-PRESSURE-CONTROLLED CZOCHRALSKI METHOD - COMPARISON WITH STANDARD LIQUID-ENCAPSULATED CZOCHRALSKI MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 65-71

Authors: FOGLIANI S MASI M CARRA S GUADALUPI G SMITH B MEREGALLI L
Citation: S. Fogliani et al., THERMAL-ANALYSIS OF LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN INP CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 72-75

Authors: FOGLIANI S MASI M CARRA S MOLINAS B GUADALUPI G MEREGALLI L
Citation: S. Fogliani et al., THERMAL-STRESSES AND DISLOCATION FORMATION IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN INP CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 76-79

Authors: FAVARETTO M GUADALUPI GM MEREGALLI L MOLINAS B TOLOMIO G
Citation: M. Favaretto et al., ON THE DETERMINATION AND CONTROL OF FLATS LOCATION IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN INP WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 80-83

Authors: SIEGEL W KUHNEL G KRETZER U
Citation: W. Siegel et al., CORRELATION OF MICRO-NON-UNIFORMITIES AND ELECTRON-MOBILITY IN UNDOPED LIQUID-ENCAPSULATED CZOCHRALSKI AND VERTICAL-GRADIENT FREEZE GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 84-86

Authors: BUHRIG E FRANK C GARTNER G HEIN K KLEMM V KUHNEL G VOLAND U
Citation: E. Buhrig et al., UNDOPED GAAS GROWN BY THE VERTICAL GRADIENT FREEZE METHOD - GROWTH AND PROPERTIES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 87-90

Authors: ZEMKE D GRANT I WITTMANN G MULLER G
Citation: D. Zemke et al., GROWTH AND CHARACTERIZATION OF 2-IN INP CRYSTALS BY THE VERTICAL GRADIENT FREEZE TECHNIQUE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 91-94

Authors: FORNARI R BRINCIOTTI A GOMBIA E MOSCA R SENTIRI A
Citation: R. Fornari et al., PREPARATION AND CHARACTERIZATION OF SEMIINSULATING UNDOPED INDIUM-PHOSPHIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 95-100

Authors: HIRT G MONO T MULLER G
Citation: G. Hirt et al., SPECTROSCOPIC INVESTIGATION OF DEEP LEVELS RELATED TO THE COMPENSATION MECHANISM OF NOMINALLY UNDOPED SEMIINSULATING INP, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 101-106

Authors: SEIDL A MOSEL E MULLER G
Citation: A. Seidl et al., NONUNIFORMITY OF FE DOPING IN SEMIINSULATING LEC-GROWN INP AND ITS CHARACTERIZATION BY VARIOUS MAPPING METHODS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 107-110

Authors: AVELLA M JIMENEZ J ALVAREZ A GONZALEZ MA SANZ LF
Citation: M. Avella et al., PHOTOCURRENT STUDY OF FE-DOPED SEMIINSULATING INP, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 111-114
Risultati: 1-25 | 26-50 | 51-75 | 76-100 | >>