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Authors: LANNOO M
Citation: M. Lannoo, BASIC PRINCIPLES GOVERNING THE SURFACE ATOMIC-STRUCTURE OF ZINC BLENDE SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 1-8

Authors: WITT GL
Citation: Gl. Witt, LTMBE GAAS - PRESENT STATUS AND PERSPECTIVES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 9-15

Authors: HAUTOJARVI P MAKINEN J PALKO S SAARINEN K CORBEL C LISZKAY L
Citation: P. Hautojarvi et al., POINT-DEFECTS IN III-V MATERIALS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 16-22

Authors: MCQUAID SA PRITCHARD RE NEWMAN RC OHAGAN S MISSOUS M
Citation: Sa. Mcquaid et al., GALLIUM VACANCY RELATED DEFECTS IN SILICON DOPED GAAS GROWN AT LOW-TEMPERATURES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 23-26

Authors: KOWALSKI G KURPIEWSKI A KAMINSKA M WEBER ER
Citation: G. Kowalski et al., EL2-LIKE DEFECTS IN LOW-TEMPERATURE GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 27-30

Authors: MELLOCH MR WOODALL JM OTSUKA N MAHALINGAM K CHANG CL NOLTE DD
Citation: Mr. Melloch et al., GAAS, ALGAAS, AND INGAAS EPILAYERS CONTAINING AS CLUSTERS - SEMIMETALSEMICONDUCTOR COMPOSITES/, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 31-36

Authors: CLAVERIE A NAMAVAR F LILIENTALWEBER Z DRESZER P WEBER ER
Citation: A. Claverie et al., SEMIINSULATING GAAS MADE BY AS IMPLANTATION AND THERMAL ANNEALING, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 37-40

Authors: KORONA KP KAMINSKA M BARANOWSKI JM WEBER ER
Citation: Kp. Korona et al., ELECTROOPTICAL MEASUREMENT OF LOW-TEMPERATURE GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 41-44

Authors: CLAVERIE A LILIENTALWEBER Z
Citation: A. Claverie et Z. Lilientalweber, EXTENDED DEFECTS AND PRECIPITATES IN LT-GAAS, LT-INALAS AND LT-INP, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 45-54

Authors: LIPKA KM SPLINGART B ZHANG X POESE M PANZLAFF K KOHN E
Citation: Km. Lipka et al., INTERFACIAL BARRIER CHARACTERISTICS OF LT-GAAS ON LOW DOPED GAAS-LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 55-60

Authors: WHITAKER JF
Citation: Jf. Whitaker, OPTOELECTRONIC APPLICATIONS OF LTMBE III-V MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 61-67

Authors: DEKORSY T ZHOU XQ PLOOG K KURZ H
Citation: T. Dekorsy et al., SUBPICOSECOND ELECTRIC-FIELD DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS OBSERVED BY REFLECTIVE ELECTROOPTIC SAMPLING, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 68-71

Authors: MISHRA UK
Citation: Uk. Mishra, APPLICATIONS OF GAAS GROWN AT A LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 72-77

Authors: WESTPHALEN R BOUDART B THERON D WALLART X DRUELLE Y CROSNIER Y
Citation: R. Westphalen et al., TEMPERATURE-MEASUREMENTS OF LT GAAS DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 78-81

Authors: VANRHEENEN AD LIN Y TEHRANI S CHEN CL SMITH FW
Citation: Ad. Vanrheenen et al., NOISE STUDIES OF HFETS ON LOW-TEMPERATURE-GROWN GAAS BUFFERS AND OF MESFETS WITH LOW-TEMPERATURE-GROWN GAAS PASSIVATION, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 82-85

Authors: KHIROUNI K MAAREF H BOURGOIN JC GARCIA JC
Citation: K. Khirouni et al., ELECTRICAL-CONDUCTION IN LOW-TEMPERATURE-GROWN INP, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 86-88

Authors: KUNZEL H BOTTCHER J HASE A HEEDT C HOENOW H
Citation: H. Kunzel et al., LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF AL(GA)INAS ON INP AND ITS APPLICATION TO HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 89-92

Authors: KALBOUSSI A MARRAKCHI G TABATA A GUILLOT G HALKIAS G ZEKENTES K GEORGAKILAS A CRISTOU A
Citation: A. Kalboussi et al., PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 93-96

Authors: KELLIHER JT THORNTON J DIETZ N LUCOVSKY G BACHMANN KJ
Citation: Jt. Kelliher et al., LOW-TEMPERATURE CHEMICAL BEAM EPITAXY OF GALLIUM PHOSPHIDE SILICON HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 97-102

Authors: VONBARDELEBEN HJ HIRTZ JP MANASREH MO
Citation: Hj. Vonbardeleben et al., PAPERS PRESENTED AT THE EUROPEAN-MATERIALS-RESEARCH-SOCIETY 1993 SPRING MEETING, SYMPOSIUM B - LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III-V MATERIALS - PHYSICS AND APPLICATIONS, MAY 4-7, 1993, STRASBOURG, FRANCE - PREFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 180000007-180000007

Authors: NISHIZAWA J
Citation: J. Nishizawa, STOICHIOMETRY OF III-V COMPOUNDS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 107-119

Authors: HEINECKE H VEUHOFF E
Citation: H. Heinecke et E. Veuhoff, EVALUATION OF III-V GROWTH-H TECHNOLOGIES FOR OPTOELECTRONIC APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 120-129

Authors: THRUSH EJ STAGG JP GIBBON MA MALLARD RE HAMILTON B JOWETT JM ALLEN EM
Citation: Ej. Thrush et al., SELECTIVE AND NONPLANAR EPITAXY OF INP GAINAS(P) BY MOCVD/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 130-146

Authors: SCHOLZ F
Citation: F. Scholz, ESPRIT MORSE - RESEARCH FOR NOVEL METAL-ORGANIC PRECURSORS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 147-152

Authors: ROHR T WALTHER M ROCHUS S BOHM G KLEIN W TRANKLE G WEIMANN G
Citation: T. Rohr et al., MBE REGROWTH OF GAAS ALGAAS STRUCTURES ON RIE PATTERNED SUBSTRATES/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 153-156
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