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Table of contents of journal: *Physica B : condensed matter

Results: 1-25/1521

Authors: Stavola, M
Citation: M. Stavola, To 40 years of defects in semiconductors: may the problem never be solved!, PHYSICA B, 274, 1999, pp. 1-6

Authors: Watkins, GD Chow, KH
Citation: Gd. Watkins et Kh. Chow, Self-interstitials in semiconductors: what we are learning from interstitial Zn in ZnSe, PHYSICA B, 274, 1999, pp. 7-14

Authors: Davies, G
Citation: G. Davies, Current problems in diamond: towards a quantitative understanding, PHYSICA B, 274, 1999, pp. 15-23

Authors: Speck, JS Rosner, SJ
Citation: Js. Speck et Sj. Rosner, The role of threading dislocations in the physical properties of GaN and its alloys, PHYSICA B, 274, 1999, pp. 24-32

Authors: Saarinen, K Nissila, J Oila, J Ranki, V Hakala, M Puska, MJ Hautojarvi, P Likonen, J Suski, T Grzegory, I Lucznik, B Porowski, S
Citation: K. Saarinen et al., Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals, PHYSICA B, 274, 1999, pp. 33-38

Authors: Godlewski, M Suski, T Grzegory, I Porowski, S Bergman, JP Chen, WM Monemar, B
Citation: M. Godlewski et al., Mechanism of radiative recombination in acceptor-doped bulk GaN crystals, PHYSICA B, 274, 1999, pp. 39-42

Authors: Hofmann, DM Burkhardt, W Leiter, F von Forster, W Alves, H Hofstaetter, A Meyer, BK Romanov, NG Amano, H Akasaki, I
Citation: Dm. Hofmann et al., Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration, PHYSICA B, 274, 1999, pp. 43-45

Authors: Seghier, D Gislason, HP
Citation: D. Seghier et Hp. Gislason, Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN : Mg, PHYSICA B, 274, 1999, pp. 46-49

Authors: Romano, LT Van de Walle, CG Krusor, BS Lau, R Ho, J Schmidt, T Ager, JW Gotz, W Kern, RS
Citation: Lt. Romano et al., Effect of Si doping on the strain and defect structure of GaN thin films, PHYSICA B, 274, 1999, pp. 50-53

Authors: Kamiura, Y Yamashita, Y Nakamura, S
Citation: Y. Kamiura et al., Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitride, PHYSICA B, 274, 1999, pp. 54-57

Authors: Glaser, ER Kennedy, TA Freitas, JA Shanabrook, BV Wickenden, AE Koleske, DD Henry, RL Obloh, H
Citation: Er. Glaser et al., Optically detected magnetic resonance of shallow donor - shallow acceptor and deep (2.8-3.2 eV) recombination from Mg-doped GaN, PHYSICA B, 274, 1999, pp. 58-62

Authors: Seghier, D Gislason, HP
Citation: D. Seghier et Hp. Gislason, The role of deep levels in the persistent photoconductivity in Mg-doped GaN grown by MOCVD, PHYSICA B, 274, 1999, pp. 63-65

Authors: Kornitzer, G Grehl, M Thonke, K Sauer, R Kirchner, C Schwegler, V Kamp, M Leszczynski, M Grzegory, I Porowski, S
Citation: G. Kornitzer et al., High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers, PHYSICA B, 274, 1999, pp. 66-69

Authors: Brillson, LJ Levin, TM Jessen, GH Young, AP Tu, C Naoi, Y Ponce, FA Yang, Y Lapeyre, GJ MacKenzie, JD Abernathy, CR
Citation: Lj. Brillson et al., Defect formation near GaN surfaces and interfaces, PHYSICA B, 274, 1999, pp. 70-74

Authors: Colton, JS Yu, PY Teo, KL Perlin, P Weber, ER Grzegory, I Uchida, K
Citation: Js. Colton et al., Selective excitation of the yellow luminescence of GaN, PHYSICA B, 274, 1999, pp. 75-79

Authors: Korotkov, RY Reshchikov, MA Wessels, BW
Citation: Ry. Korotkov et al., Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy, PHYSICA B, 274, 1999, pp. 80-83

Authors: Auret, FD Goodman, SA Myburg, G Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts, PHYSICA B, 274, 1999, pp. 84-87

Authors: Gerstmann, U Overhof, H
Citation: U. Gerstmann et H. Overhof, Influence of generalized gradient approximations on theoretical hyperfine fields of paramagnetic defects, PHYSICA B, 274, 1999, pp. 88-91

Authors: Auret, FD Meyer, WE Goodman, SA Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Metastable-like behaviour of a sputter deposition-induced electron trap inn-GaN, PHYSICA B, 274, 1999, pp. 92-95

Authors: Burchard, A Haller, EE Stotzler, A Weissenborn, R Deicher, M
Citation: A. Burchard et al., Annealing of ion-implanted GaN, PHYSICA B, 274, 1999, pp. 96-100

Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS
Citation: Vv. Emtsev et al., Behavior of electrically active point defects in irradiated MOCVD n-GaN, PHYSICA B, 274, 1999, pp. 101-104

Authors: Reshchikov, MA Shahedipour, F Korotkov, RY Ulmer, MP Wessels, BW
Citation: Ma. Reshchikov et al., Deep acceptors in undoped GaN, PHYSICA B, 274, 1999, pp. 105-108

Authors: Wetzel, C Ager, JW Topf, M Meyer, BK Amano, H Akasaki, I
Citation: C. Wetzel et al., Correlation of vibrational modes and DX-like centers in GaN : O, PHYSICA B, 274, 1999, pp. 109-112

Authors: Yamamoto, T Katayama-Yoshida, H
Citation: T. Yamamoto et H. Katayama-yoshida, Effects of oxygen incorporation in p-type AlN crystals doped with carbon species, PHYSICA B, 274, 1999, pp. 113-115

Authors: Lichti, RL Dawdy, MR Head, TL Cox, SFJ Hitti, B Schwab, C
Citation: Rl. Lichti et al., Negatively charged muonium states in gallium nitride, PHYSICA B, 274, 1999, pp. 116-119
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