Results: 1-25 | 26-38

Table of contents of journal: *Journal of crystal growth

Results: 1-25/38

Authors: Yin, LW Li, MS Cui, HJ Zou, ZD Liu, P Hao, ZY
Citation: Lw. Yin et al., Diamond formation using Fe3C as a carbon source at high temperature and high pressure, J CRYST GR, 234(1), 2002, pp. 1-4

Authors: Yamaoka, S Kumar, MDS Kanda, H Akaishi, M
Citation: S. Yamaoka et al., Crystallization of diamond from CO2 fluid at high pressure and high temperature, J CRYST GR, 234(1), 2002, pp. 5-8

Authors: Cao, YG Chen, H Li, JT Ge, CC Tang, SY Tang, JX Chen, X
Citation: Yg. Cao et al., Formation of alpha-Si3N4 whiskers with addition of NaN3 as catalyst, J CRYST GR, 234(1), 2002, pp. 9-11

Authors: Voloshin, AE Nishinaga, T Ge, P Huo, C
Citation: Ae. Voloshin et al., Te distribution in space grown GaSb, J CRYST GR, 234(1), 2002, pp. 12-24

Authors: Li, ZQ Bang, HJ Piao, GX Sawahata, J Akimoto, K Kinoshita, H Watanabe, K
Citation: Zq. Li et al., Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy, J CRYST GR, 234(1), 2002, pp. 25-31

Authors: Li, MW Li, YR Imaishi, N Tsukada, T
Citation: Mw. Li et al., Global simulation of a silicon Czochralski furnace, J CRYST GR, 234(1), 2002, pp. 32-46

Authors: Gunzburger, M Ozugurlu, E Turner, J Zhang, H
Citation: M. Gunzburger et al., Controlling transport phenomena in the Czochralski crystal growth process, J CRYST GR, 234(1), 2002, pp. 47-62

Authors: Chaussende, D Ferro, G Monteil, Y
Citation: D. Chaussende et al., Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE, J CRYST GR, 234(1), 2002, pp. 63-69

Authors: Ahn, SH Lee, SH Nahm, KS Suh, EK Hong, MH
Citation: Sh. Ahn et al., Catalytic growth of high quality GaN micro-crystals, J CRYST GR, 234(1), 2002, pp. 70-76

Authors: Yuan, HR Lu, DC Liu, XL Chen, Z Han, P Wang, XH Wang, D
Citation: Hr. Yuan et al., Statistical investigation on morphology development of gallium nitride in initial growth stage, J CRYST GR, 234(1), 2002, pp. 77-84

Authors: Gao, YZ Kan, H Gao, FS Gong, XY Yamaguchi, T
Citation: Yz. Gao et al., Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats, J CRYST GR, 234(1), 2002, pp. 85-90

Authors: Dold, P Szofran, FR Benza, KW
Citation: P. Dold et al., Detached growth of gallium doped germanium, J CRYST GR, 234(1), 2002, pp. 91-98

Authors: Lu, LW Fong, WK Zhu, CF Leung, BH Surya, C Wang, J Ge, WK
Citation: Lw. Lu et al., Study of GaN thin films grown on intermediate-temperature buffer layers bymolecular beam epitaxy, J CRYST GR, 234(1), 2002, pp. 99-104

Authors: Kim, JS Yu, PW Leem, JY Lee, JI Noh, SK Kim, JS Kim, GH Kang, SK Ban, SI Kim, SG Jang, YD Lee, UH Yim, JS Lee, D
Citation: Js. Kim et al., Growth of Si-doped InAs quantum dots and annealing effects on size distribution, J CRYST GR, 234(1), 2002, pp. 105-109

Authors: Kim, GH Choi, JB Leem, JY Lee, JI Noh, SK Kim, JS Kim, JS Kang, SK Ban, SI
Citation: Gh. Kim et al., Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy, J CRYST GR, 234(1), 2002, pp. 110-114

Authors: Yuan, HR Chen, Z Lu, DC Liu, XL Han, PD Wang, XH
Citation: Hr. Yuan et al., A geometrical model of GaN morphology in initial growth stage, J CRYST GR, 234(1), 2002, pp. 115-120

Authors: Yamasuea, E Susa, M Fukuyama, H Nagata, K
Citation: E. Yamasuea et al., Thermal conductivities of silicon and germanium in solid and liquid statesmeasured by non-stationary hot wire method with silica coated probe, J CRYST GR, 234(1), 2002, pp. 121-131

Authors: Johansson, J Seifert, W
Citation: J. Johansson et W. Seifert, Kinetics of self-assembled island formation: Part I - Island density, J CRYST GR, 234(1), 2002, pp. 132-138

Authors: Johansson, J Seifert, W
Citation: J. Johansson et W. Seifert, Kinetics of self-assembled island formation: Part II - Island size, J CRYST GR, 234(1), 2002, pp. 139-144

Authors: Lu, DC Duan, SK
Citation: Dc. Lu et Sk. Duan, Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN, J CRYST GR, 234(1), 2002, pp. 145-152

Authors: Kita, K Wen, CJ Otomo, J Yamada, K Komiyama, H Takahashi, H
Citation: K. Kita et al., Study on the lateral growth of silicon films from metal solutions with temperature gradient, J CRYST GR, 234(1), 2002, pp. 153-158

Authors: Arulchakkaravarthi, A Jayavel, P Santhanaraghavan, P Ramasamy, P
Citation: A. Arulchakkaravarthi et al., Growth of organic molecular single crystal trans-stilbene by selective self seeding from vertical Bridgman technique, J CRYST GR, 234(1), 2002, pp. 159-163

Authors: Dariel, MP Dashevsky, Z Jarashnely, A Shusterman, S Horowitz, A
Citation: Mp. Dariel et al., Carrier concentration gradient generated in p-type PbTe crystals by unidirectional solidification, J CRYST GR, 234(1), 2002, pp. 164-170

Authors: Wang, YW Zhang, LD Wang, GZ Peng, XS Chu, ZQ Liang, CH
Citation: Yw. Wang et al., Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties, J CRYST GR, 234(1), 2002, pp. 171-175

Authors: Lin, SP Fung, KZ Hon, YM Hon, MH
Citation: Sp. Lin et al., Crystallization kinetics and mechanism of the LixNi2-xO2 (0 < x <= 1) fromLi2CO3 and NiO, J CRYST GR, 234(1), 2002, pp. 176-183
Risultati: 1-25 | 26-38