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Table of contents of journal: *Applied physics letters

Results: 1-25/2684

Authors: Hvozdara, L Lugstein, A Finger, N Gianordoli, S Schrenk, W Unterrainer, K Bertagnolli, E Strasser, G Gornik, E
Citation: L. Hvozdara et al., Quantum cascade lasers with monolithic air-semiconductor Bragg reflectors, APPL PHYS L, 77(9), 2000, pp. 1241-1243

Authors: Lee, YS Meade, T DeCamp, M Norris, TB Galvanauskas, A
Citation: Ys. Lee et al., Temperature dependence of narrow-band terahertz generation from periodically poled lithium niobate, APPL PHYS L, 77(9), 2000, pp. 1244-1246

Authors: Barad, Y Lu, Y Cheng, ZY Park, SE Zhang, QM
Citation: Y. Barad et al., Composition, temperature, and crystal orientation dependence of the linearelectro-optic properties of Pb(Zn1/3Nb2/3)O-3-PbTiO3 single crystals, APPL PHYS L, 77(9), 2000, pp. 1247-1249

Authors: Jin, X Chuang, SL
Citation: X. Jin et Sl. Chuang, Relative intensity noise characteristics of injection-locked semiconductorlasers, APPL PHYS L, 77(9), 2000, pp. 1250-1252

Authors: Karve, G Bihari, B Chen, RT
Citation: G. Karve et al., Demonstration of optical gain at 1.06 mu m in a neodymium-doped polyimide waveguide, APPL PHYS L, 77(9), 2000, pp. 1253-1255

Authors: Chang, JH Cho, MW Wang, HM Wenisch, H Hanada, T Yao, T Sato, K Oda, O
Citation: Jh. Chang et al., Structural and optical properties of high-quality ZnTe homoepitaxial layers, APPL PHYS L, 77(9), 2000, pp. 1256-1258

Authors: Winnerl, S Schomburg, E Brandl, S Kus, O Renk, KF Wanke, MC Allen, SJ Ignatov, AA Ustinov, V Zhukov, A Kop'ev, PS
Citation: S. Winnerl et al., Frequency doubling and tripling of terahertz radiation in a GaAs/AlAs superlattice due to frequency modulation of Bloch oscillations, APPL PHYS L, 77(9), 2000, pp. 1259-1261

Authors: Fletcher, RB Lidzey, DG Bradley, DDC Bernius, M Walker, S
Citation: Rb. Fletcher et al., Spectral properties of resonant-cavity, polyfluorene light-emitting diodes, APPL PHYS L, 77(9), 2000, pp. 1262-1264

Authors: Kortshagen, U Heil, B
Citation: U. Kortshagen et B. Heil, Experimental observation of a "convective cell" in electron phase space inan inductively coupled radio-frequency plasma, APPL PHYS L, 77(9), 2000, pp. 1265-1267

Authors: Damilano, B Grandjean, N Massies, J Siozade, L Leymarie, J
Citation: B. Damilano et al., InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blueto red at 300 K, APPL PHYS L, 77(9), 2000, pp. 1268-1270

Authors: Jiang, FM Kojima, S
Citation: Fm. Jiang et S. Kojima, Microheterogeneity and relaxation in 0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) relaxor single crystals, APPL PHYS L, 77(9), 2000, pp. 1271-1273

Authors: Sharma, N Thomas, P Tricker, D Humphreys, C
Citation: N. Sharma et al., Chemical mapping and formation of V-defects in InGaN multiple quantum wells, APPL PHYS L, 77(9), 2000, pp. 1274-1276

Authors: Lin, IN Perng, K Lee, LH Shih, CF Liu, KS Evans, GA Steeds, JW
Citation: In. Lin et al., Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-deposited diamond films, APPL PHYS L, 77(9), 2000, pp. 1277-1279

Authors: Pan, Z Li, LH Zhang, W Lin, YW Wu, RH Ge, W
Citation: Z. Pan et al., Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 77(9), 2000, pp. 1280-1282

Authors: Kawashima, H Furuki, M Tatsuura, S Tian, M Sato, Y Pu, LS Tani, T
Citation: H. Kawashima et al., Optical gate action of a molecular thin film probed with femtosecond near-field optical microscopy, APPL PHYS L, 77(9), 2000, pp. 1283-1285

Authors: Kimura, S Kimura, H Kobayashi, K Oohira, T Izumi, K Sakata, Y Tsusaka, Y Yokoyama, K Takeda, S Urakawa, M Kagoshima, Y Matsui, J
Citation: S. Kimura et al., High-resolution microbeam x-ray diffractometry applied to InGaAsP/InP layers grown by narrow-stripe selective metal-organic vapor phase epitaxy, APPL PHYS L, 77(9), 2000, pp. 1286-1288

Authors: Schroeder, BR Meng, S Bostwick, A Olmstead, MA Rotenberg, E
Citation: Br. Schroeder et al., Epitaxial growth of laminar crystalline silicon on CaF2, APPL PHYS L, 77(9), 2000, pp. 1289-1291

Authors: Wu, XL Siu, GG Stokes, MJ Fan, DL Gu, Y Bao, XM
Citation: Xl. Wu et al., Blue-emitting beta-SiC fabricated by annealing C-60 coupled on porous silicon, APPL PHYS L, 77(9), 2000, pp. 1292-1294

Authors: Zhang, K Heyn, C Hansen, W Schmidt, T Falta, J
Citation: K. Zhang et al., Strain status of self-assembled InAs quantum dots, APPL PHYS L, 77(9), 2000, pp. 1295-1297

Authors: Kuok, MH Ng, SC Zhang, VL
Citation: Mh. Kuok et al., A Brillouin study of the angular dispersion of generalized surface and pseudosurface acoustic waves on the (001) surface of InSb, APPL PHYS L, 77(9), 2000, pp. 1298-1300

Authors: Adachi, D Hasui, S Toyama, T Okamoto, H
Citation: D. Adachi et al., Structural and luminescence properties of nanostructured ZnS : Mn, APPL PHYS L, 77(9), 2000, pp. 1301-1303

Authors: Liao, XZ Zou, J Cockayne, DJH Jiang, ZM Wang, X Leon, R
Citation: Xz. Liao et al., Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands, APPL PHYS L, 77(9), 2000, pp. 1304-1306

Authors: Sanguinetti, S Padovani, M Gurioli, M Grilli, E Guzzi, M Vinattieri, A Colocci, M Frigeri, P Franchi, S
Citation: S. Sanguinetti et al., Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots, APPL PHYS L, 77(9), 2000, pp. 1307-1309

Authors: Croke, ET Grosse, F Vajo, JJ Gyure, MF Floyd, M Smith, DJ
Citation: Et. Croke et al., Substitutional C fraction and the influence of C on Si dimer diffusion in Si1-yCy alloys grown on (001) and (118) Si, APPL PHYS L, 77(9), 2000, pp. 1310-1312

Authors: Seifert, G Kohler, T Frauenheim, T
Citation: G. Seifert et al., Molecular wires, solenoids, and capacitors by sidewall functionalization of carbon nanotubes, APPL PHYS L, 77(9), 2000, pp. 1313-1315
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