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Table of contents of journal: *Applied physics letters

Results: 1-25/2631

Authors: Heikenfeld, J Garter, M Lee, DS Birkhahn, R Steckl, AJ
Citation: J. Heikenfeld et al., Red light emission by photoluminescence and electroluminescence from Eu-doped GaN, APPL PHYS L, 75(9), 1999, pp. 1189-1191

Authors: Krestnikov, IL Lundin, WV Sakharov, AV Semenov, VA Usikov, AS Tsatsul'nikov, AF Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Il. Krestnikov et al., Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser, APPL PHYS L, 75(9), 1999, pp. 1192-1194

Authors: Tomkos, I Zacharopoulos, I Roditi, E Syvridis, D
Citation: I. Tomkos et al., Experimental investigation of wavelength conversion based on four-wave mixing in a three-electrode distributed feedback laser, APPL PHYS L, 75(9), 1999, pp. 1195-1197

Authors: Cristiani, I Banfi, GP Degiorgio, V Tartara, L
Citation: I. Cristiani et al., Wavelength shifting of optical pulses through cascaded second-order processes in a lithium-niobate channel waveguide, APPL PHYS L, 75(9), 1999, pp. 1198-1200

Authors: Jin, CJ Cheng, BY Man, BY Zhang, DZ Ban, SZ Sun, B Li, LM Zhang, XD Zhang, ZQ
Citation: Cj. Jin et al., Two-dimensional metallodielectric photonic crystal with a large band gap, APPL PHYS L, 75(9), 1999, pp. 1201-1203

Authors: Vodopyanov, KL Maffetone, JP Zwieback, I Ruderman, W
Citation: Kl. Vodopyanov et al., AgGaS2 optical parametric oscillator continuously tunable from 3.9 to 11.3mu m, APPL PHYS L, 75(9), 1999, pp. 1204-1206

Authors: Liu, AS Ning, CZ
Citation: As. Liu et Cz. Ning, Terahertz optical gain based on intersubband transitions in optically pumped semiconductor quantum wells: Coherent pump-probe interactions, APPL PHYS L, 75(9), 1999, pp. 1207-1209

Authors: Gerhardt, R Kleine-Borger, J Beilschmidt, L Frommeyer, M Dotsch, H Gather, B
Citation: R. Gerhardt et al., Efficient channel-waveguide laser in Nd : GGG at 1.062 mu m wavelength, APPL PHYS L, 75(9), 1999, pp. 1210-1212

Authors: Cao, H Zhao, YG Liu, X Seelig, EW Chang, RPH
Citation: H. Cao et al., Effect of external feedback on lasing in random media, APPL PHYS L, 75(9), 1999, pp. 1213-1215

Authors: Liu, HC Mao, XL Yoo, JH Russo, RE
Citation: Hc. Liu et al., Nonlinear changes in plasma and crater properties during laser ablation ofSi, APPL PHYS L, 75(9), 1999, pp. 1216-1218

Authors: Nishikawa, H Stathis, JH Cartier, E
Citation: H. Nishikawa et al., Defects in thermal oxide studied by photoluminescence spectroscopy, APPL PHYS L, 75(9), 1999, pp. 1219-1221

Authors: Hassan, KM Sharma, AK Narayan, J Muth, JF Teng, CW Kolbas, RM
Citation: Km. Hassan et al., Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition, APPL PHYS L, 75(9), 1999, pp. 1222-1224

Authors: Zhuang, ZZ Kim, YJ Patel, JS
Citation: Zz. Zhuang et al., Optimized configuration for reflective bistable twisted nematic displays, APPL PHYS L, 75(9), 1999, pp. 1225-1227

Authors: Merkulov, VI Lowndes, DH Baylor, LR
Citation: Vi. Merkulov et al., Field-emission studies of smooth and nanostructured carbon films, APPL PHYS L, 75(9), 1999, pp. 1228-1230

Authors: Maksimov, AA Zaitsev, SV Tartakovskii, II Kulakovskii, VD Yakovlev, DR Ossau, W Keim, M Reuscher, G Waag, A Landwehr, G
Citation: Aa. Maksimov et al., Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment, APPL PHYS L, 75(9), 1999, pp. 1231-1233

Authors: Siethoff, H Brion, HG Schroter, W
Citation: H. Siethoff et al., A regime of the yield point of silicon at high temperatures, APPL PHYS L, 75(9), 1999, pp. 1234-1236

Authors: Goletti, C Sgarlata, A Motta, N Chiaradia, P Paolesse, R Angelaccio, A Drago, M Di Natale, C D'Amico, A Cocco, M Troitsky, VI
Citation: C. Goletti et al., Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films, APPL PHYS L, 75(9), 1999, pp. 1237-1239

Authors: Asnin, VM Pollak, FH Ramer, J Schurman, M Ferguson, I
Citation: Vm. Asnin et al., High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope, APPL PHYS L, 75(9), 1999, pp. 1240-1242

Authors: Kuskovsky, I Li, D Neumark, GF Bondarev, VN Pikhitsa, PV
Citation: I. Kuskovsky et al., The role of potential fluctuations in continuous-wave donor-acceptor pair luminescence of heavily doped materials, APPL PHYS L, 75(9), 1999, pp. 1243-1245

Authors: Schwarzl, T Heiss, W Springholz, G
Citation: T. Schwarzl et al., Ultra-high-finesse IV-VI microcavities for the midinfrared, APPL PHYS L, 75(9), 1999, pp. 1246-1248

Authors: Sun, CK Liang, JC Stanton, CJ Abare, A Coldren, L DenBaars, SP
Citation: Ck. Sun et al., Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells, APPL PHYS L, 75(9), 1999, pp. 1249-1251

Authors: Rubinger, RM de Oliveira, AG Ribeiro, GM Bezzera, JC Moreira, MVB Chacham, H
Citation: Rm. Rubinger et al., Electro-optic recovery of the photoquenching effect, APPL PHYS L, 75(9), 1999, pp. 1252-1254

Authors: Bearda, T Houssa, M Mertens, PW Vanhellemont, J Heyns, M
Citation: T. Bearda et al., Observation of critical gate oxide thickness for substrate-defect related oxide failure, APPL PHYS L, 75(9), 1999, pp. 1255-1257

Authors: Finkeissen, E Potemski, M Wyder, P Vina, L Weimann, G
Citation: E. Finkeissen et al., Cooling of a semiconductor by luminescence up-conversion, APPL PHYS L, 75(9), 1999, pp. 1258-1260

Authors: Craciun, V Boyd, IW Hutton, B Williams, D
Citation: V. Craciun et al., Characteristics of dielectric layers grown on Ge by low temperature vacuumultraviolet-assisted oxidation, APPL PHYS L, 75(9), 1999, pp. 1261-1263
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