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Table of contents of journal: *Applied physics letters

Results: 1-25/2557

Authors: DAVIS RC WILLIAMS CC
Citation: Rc. Davis et Cc. Williams, NANOMETER-SCALE ABSORPTION-SPECTROSCOPY BY NEAR-FIELD PHOTODETECTION OPTICAL MICROSCOPY, Applied physics letters, 69(9), 1996, pp. 1179-1181

Authors: PERLMUTTER SH DOROSKI D MODDEL G
Citation: Sh. Perlmutter et al., DEGRADATION OF LIQUID-CRYSTAL DEVICE PERFORMANCE DUE TO SELECTIVE ADSORPTION OF IONS, Applied physics letters, 69(9), 1996, pp. 1182-1184

Authors: JAHNKE F SCHNEIDER HC KOCH SW
Citation: F. Jahnke et al., COMBINED INFLUENCE OF DESIGN AND CARRIER SCATTERING ON THE ULTRAFAST EMISSION DYNAMICS OF QUANTUM-WELL MICROCAVITY LASERS, Applied physics letters, 69(9), 1996, pp. 1185-1187

Authors: TAMAOKI N VANKEUREN E MATSUDA H HASEGAWA K YAMAOKA T
Citation: N. Tamaoki et al., PHOTOREVERSIBLE OPTICAL NONLINEARITIES OF POLYMERIC FILMS CONTAINING SPIROPYRAN WITH LONG ALKYL CHAINS, Applied physics letters, 69(9), 1996, pp. 1188-1190

Authors: NAGAMURA T HAMADA T
Citation: T. Nagamura et T. Hamada, NOVEL ALL-OPTICAL LIGHT-MODULATION BASED ON COMPLEX REFRACTIVE-INDEX CHANGES OF ORGANIC DIE-DOPED POLYMER FILM UPON PHOTOEXCITATION, Applied physics letters, 69(9), 1996, pp. 1191-1193

Authors: LUDWIG C KUHL J
Citation: C. Ludwig et J. Kuhl, STUDIES OF THE TEMPORAL AND SPECTRAL SHAPE OF TERAHERTZ PULSES GENERATED FROM PHOTOCONDUCTING SWITCHES, Applied physics letters, 69(9), 1996, pp. 1194-1196

Authors: XU JJ ZHOU LH THAKUR M
Citation: Jj. Xu et al., MEASUREMENT OF ELECTROOPTIC EFFECTS IN SINGLE-CRYSTAL FILMS OF N-(4-NITROPHENYL)-L-PROLINOL, Applied physics letters, 69(9), 1996, pp. 1197-1198

Authors: LANZEROTTI MY SCHIRMER RW GAETA AL
Citation: My. Lanzerotti et al., HIGH-REFLECTIVITY, WIDE-BANDWIDTH OPTICAL-PHASE CONJUGATION VIA 4-WAVE-MIXING IN POTASSIUM VAPOR, Applied physics letters, 69(9), 1996, pp. 1199-1201

Authors: BINET F DUBOZ JY ROSENCHER E SCHOLZ F HARLE V
Citation: F. Binet et al., MECHANISMS OF RECOMBINATION IN GAN PHOTODETECTORS, Applied physics letters, 69(9), 1996, pp. 1202-1204

Authors: SAMESHIMA T SUNAGA Y TAKASHIMA N TAJIMA A
Citation: T. Sameshima et al., RAPID THERMAL ANNEALING USING THE COMBUSTION OF H-2 WITH N2O, Applied physics letters, 69(9), 1996, pp. 1205-1207

Authors: KAWAMURA Y SHIBATA T INOUE A MASUMOTO T
Citation: Y. Kawamura et al., DEFORMATION-BEHAVIOR OF ZR65AL10NI10CU15 GLASSY ALLOY WITH WIDE SUPERCOOLED LIQUID REGION, Applied physics letters, 69(9), 1996, pp. 1208-1210

Authors: HUIZING HGA VISSER CCG COWERN NEB STOLK PA DEKRUIF RCM
Citation: Hga. Huizing et al., ULTRAFAST INTERSTITIAL INJECTION DURING TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON, Applied physics letters, 69(9), 1996, pp. 1211-1213

Authors: SMITH AR CHAO KJ SHIH CK ANSELM KA SRINIVASAN A STREETMAN BG
Citation: Ar. Smith et al., IDENTIFICATION OF FIRST AND 2ND LAYER ALUMINUM ATOMS IN DILUTE ALGAASUSING CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY, Applied physics letters, 69(9), 1996, pp. 1214-1216

Authors: ANDREWS GT ZUK J KIEFTE H CLOUTER MJ NOSSARZEWSKAORLOWSKA E
Citation: Gt. Andrews et al., ELASTIC CHARACTERIZATION OF A SUPPORTED POROUS SILICON LAYER BY BRILLOUIN-SCATTERING, Applied physics letters, 69(9), 1996, pp. 1217-1219

Authors: SCHWARZ KW TERSOFF J
Citation: Kw. Schwarz et J. Tersoff, INTERACTION OF THREADING AND MISFIT DISLOCATIONS IN A STRAINED EPITAXIAL LAYER, Applied physics letters, 69(9), 1996, pp. 1220-1222

Authors: LEE EG WOUTERS DJ WILLEMS G MAES HE
Citation: Eg. Lee et al., VOLTAGE SHIFT AND DEFORMATION IN THE HYSTERESIS LOOP OF PB(ZR,TI)O-3 THIN-FILM BY DEFECTS, Applied physics letters, 69(9), 1996, pp. 1223-1225

Authors: KIRSTAEDTER N SCHMIDT OG LEDENTSOV NN BIMBERG D USTINOV VM EGOROV AY ZHUKOV AE MAXIMOV MV KOPEV PS ALFEROV ZI
Citation: N. Kirstaedter et al., GAIN AND DIFFERENTIAL GAIN OF SINGLE-LAYER INAS GAAS QUANTUM-DOT INJECTION-LASERS/, Applied physics letters, 69(9), 1996, pp. 1226-1228

Authors: FAN ZF MOHAMMAD SN AKTAS O BOTCHKAREV AE SALVADOR A MORKOC H
Citation: Zf. Fan et al., SUPPRESSION OF LEAKAGE CURRENTS AND THEIR EFFECT ON THE ELECTRICAL PERFORMANCE OF ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS/, Applied physics letters, 69(9), 1996, pp. 1229-1231

Authors: TIWARI S RANA F CHAN K SHI L HANAFI H
Citation: S. Tiwari et al., SINGLE CHARGE AND CONFINEMENT EFFECTS IN NANO-CRYSTAL MEMORIES, Applied physics letters, 69(9), 1996, pp. 1232-1234

Authors: TANAKA S UMBACH CC BLAKELY JM TROMP RM MANKOS M
Citation: S. Tanaka et al., FABRICATION OF ARRAYS OF LARGE STEP-FREE REGIONS ON SI(001), Applied physics letters, 69(9), 1996, pp. 1235-1237

Authors: CHANG KM WANG SW WU CJ YEH TH LI CH YANG JY
Citation: Km. Chang et al., INFLUENCES OF DEPOSITION TEMPERATURE ON THERMAL-STABILITY AND MOISTURE RESISTANCE OF CHEMICAL-VAPOR-DEPOSITED FLUORINATED SILICON-OXIDE BY USING INDIRECT FLUORINATING PRECURSOR, Applied physics letters, 69(9), 1996, pp. 1238-1240

Authors: KHURGIN JB FORSYTHE EW TOMPA GS KHAN BA
Citation: Jb. Khurgin et al., INFLUENCE OF THE SIZE DISPERSION ON THE EMISSION-SPECTRA OF THE SI NANOSTRUCTURES, Applied physics letters, 69(9), 1996, pp. 1241-1243

Authors: XIN QS CONRAD S ZHU XY
Citation: Qs. Xin et al., THE DEPOSITION OF A GAS EPITAXIAL FILM ON GAAS USING AN EXCHANGE-REACTION, Applied physics letters, 69(9), 1996, pp. 1244-1246

Authors: ZHONG L HAYASHI K TAKEDA R
Citation: L. Zhong et al., DOUBLE-CRYSTAL X-RAY-DIFFRACTION FROM SILICON FILM ON INSULATOR, Applied physics letters, 69(9), 1996, pp. 1247-1249

Authors: YOON JH LEE CH
Citation: Jh. Yoon et Ch. Lee, STABILITY OF UNDOPED HYDROGENATED AMORPHOUS-SILICON MULTILAYER FILM GROWN WITH ALTERNATING SUBSTRATE-TEMPERATURE, Applied physics letters, 69(9), 1996, pp. 1250-1252
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