Results: 1-25 | 26-50 | 51-75 | 76-100 | >>

Table of contents of journal: *Applied physics letters

Results: 1-25/2468

Authors: JUSTUS BL HUSTON AL
Citation: Bl. Justus et Al. Huston, ULTRAVIOLET DOSIMETRY USING THERMOLUMINESCENCE OF SEMICONDUCTOR-DOPEDVYCOR GLASS, Applied physics letters, 67(9), 1995, pp. 1179-1181

Authors: TWYFORD EJ CARTER CA KOHL PA JOKERST NM
Citation: Ej. Twyford et al., THE INFLUENCE OF ALUMINUM CONCENTRATION ON PHOTOELECTROCHEMICAL ETCHING OF FIRST-ORDER GRATINGS IN GAAS ALGAAS/, Applied physics letters, 67(9), 1995, pp. 1182-1184

Authors: HIRAYAMA T TANJI T TONOMURA A
Citation: T. Hirayama et al., DIRECT VISUALIZATION OF ELECTROMAGNETIC MICROFIELDS BY INTERFERENCE OF 3 ELECTRON WAVES, Applied physics letters, 67(9), 1995, pp. 1185-1187

Authors: KLOTZ S GAUTHIER M BESSON JM HAMEL G NELMES RJ LOVEDAY JS WILSON RM MARSHALL WG
Citation: S. Klotz et al., TECHNIQUES FOR NEUTRON-DIFFRACTION ON SOLIDIFIED-GASES TO 10 GPA AND ABOVE - APPLICATIONS TO ND3 PHASE-IV, Applied physics letters, 67(9), 1995, pp. 1188-1190

Authors: AKTSIPETROV OA MELNIKOV AV MOISEEV YN MURZINA TV VANHASSELT CW RASING T RIKKEN G
Citation: Oa. Aktsipetrov et al., 2ND-HARMONIC GENERATION AND ATOMIC-FORCE MICROSCOPY STUDIES OF POROUSSILICON, Applied physics letters, 67(9), 1995, pp. 1191-1193

Authors: UZANSAGUY C CYTERMANN C BRENER R RICHTER V SHAANAN M KALISH R
Citation: C. Uzansaguy et al., DAMAGE THRESHOLD FOR ION-BEAM-INDUCED GRAPHITIZATION OF DIAMOND, Applied physics letters, 67(9), 1995, pp. 1194-1196

Authors: JIANG X JIA CL
Citation: X. Jiang et Cl. Jia, DIAMOND EPITAXY ON (001)SILICON - AN INTERFACE INVESTIGATION, Applied physics letters, 67(9), 1995, pp. 1197-1199

Authors: PEREZLANDAZABAL JI JUAN JS NO ML
Citation: Ji. Perezlandazabal et al., STRESS-INDUCED LI-LI PAIRS REORIENTATION IN AL-LI ALLOYS, Applied physics letters, 67(9), 1995, pp. 1200-1202

Authors: WALLACE WE WU WL
Citation: We. Wallace et Wl. Wu, A NOVEL METHOD FOR DETERMINING THIN-FILM DENSITY BY ENERGY-DISPERSIVEX-RAY REFLECTIVITY, Applied physics letters, 67(9), 1995, pp. 1203-1205

Authors: KOCANDA J FESIC V VESELY M BREZA J KADLECIKOVA M
Citation: J. Kocanda et al., ESTIMATION OF THE DEPTH RESOLUTION OF SECONDARY-ION MASS-SPECTROMETRYAT THE INTERFACE SIO2 SI/, Applied physics letters, 67(9), 1995, pp. 1206-1207

Authors: YAMASHITA A TATSUMI T
Citation: A. Yamashita et T. Tatsumi, GROWTH-MODEL FOR PBTIO3 THIN-FILMS GROWN BY SURFACE-REACTION ENHANCEDMETALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(9), 1995, pp. 1208-1210

Authors: HUANG XY YANG DK DOANE JW
Citation: Xy. Huang et al., TRANSIENT DIELECTRIC STUDY OF BISTABLE REFLECTIVE CHOLESTERIC DISPLAYS AND DESIGN OF RAPID DRIVE SCHEME, Applied physics letters, 67(9), 1995, pp. 1211-1213

Authors: YATSUI K GRIGORIU C KUBO H MASUGATA K SHIMOTORI Y
Citation: K. Yatsui et al., SYNTHESIS OF NANOSIZE POWDERS OF ALUMINA BY ABLATION PLASMA PRODUCED BY INTENSE PULSED LIGHT-ION BEAM, Applied physics letters, 67(9), 1995, pp. 1214-1216

Authors: RETTENBERGER A BAUR C LAUGER K HOFFMANN D GRAND JY MOLLER R
Citation: A. Rettenberger et al., VARIATION OF THE THERMOVOLTAGE ACROSS A VACUUM TUNNELING BARRIER - COPPER ISLANDS ON AG(111), Applied physics letters, 67(9), 1995, pp. 1217-1219

Authors: WU TC KAN SC VASSILOVSKI D LAU KY
Citation: Tc. Wu et al., CHARACTERISTICS OF LONGITUDINAL OPTICAL PHONON-ASSISTED QUANTUM CARRIER CAPTURE PROCESS-TEMPERATURE AND BIAS DEPENDENCE, Applied physics letters, 67(9), 1995, pp. 1220-1222

Authors: SULTAN A CRAIG M REDDY K BANERJEE S ISHIDA E MAILLOT P NEIL T LARSON L
Citation: A. Sultan et al., THE DEPENDENCE OF ULTRASHALLOW JUNCTION DEPTHS ON IMPACT DOSE-RATES, Applied physics letters, 67(9), 1995, pp. 1223-1225

Authors: KRAAYEVELD JR VERBRUGGEN AH WILLEMSEN AWJ RADELAAR S
Citation: Jr. Kraayeveld et al., CRITICAL CURRENT-LENGTH PRODUCT FOR ELECTROMIGRATION-INDUCED RESISTANCE CHANGES IN SHORT AL LINES, Applied physics letters, 67(9), 1995, pp. 1226-1228

Authors: LAI SL RAMANATH G ALLEN LH INFANTE P MA Z
Citation: Sl. Lai et al., HIGH-SPEED (10(4)-DEGREES-C S) SCANNING MICROCALORIMETRY WITH MONOLAYER SENSITIVITY (J/M(2))/, Applied physics letters, 67(9), 1995, pp. 1229-1231

Authors: ALBRECHT M CHRISTIANSEN S MICHLER J DORSCH W STRUNK HP HANSSON PO BAUSER E
Citation: M. Albrecht et al., SURFACE RIPPLES, CROSSHATCH PATTERN, AND DISLOCATION FORMATION - COOPERATING MECHANISMS IN LATTICE MISMATCH RELAXATION, Applied physics letters, 67(9), 1995, pp. 1232-1234

Authors: HUANG ZH CHUNG MS CUTLER PH MISKOVSKY NM SULLIVAN TE
Citation: Zh. Huang et al., MONTE-CARLO SIMULATION OF HOT-ELECTRON CHARGE-TRANSPORT IN DIAMOND UNDER AN INTERNAL ELECTRIC-FIELD, Applied physics letters, 67(9), 1995, pp. 1235-1237

Authors: ELEMAWY AA QIU Y OSINSKY A LITTLEFIELD E TEMKIN H
Citation: Aa. Elemawy et al., NOVEL TECHNIQUE FOR P-TYPE DOPING OF ZNSE, Applied physics letters, 67(9), 1995, pp. 1238-1240

Authors: PARK PW CHU HY HAN SG CHOI YW KIM GG LEE EH
Citation: Pw. Park et al., OPTICAL SWITCHING MECHANISM-BASED ON CHARGE ACCUMULATION EFFECTS IN RESONANT-TUNNELING DIODES, Applied physics letters, 67(9), 1995, pp. 1241-1243

Authors: LAHIRI I NOLTE DD CHANG JCP WOODALL JM MELLOCH MR
Citation: I. Lahiri et al., THE ROLE OF EXCESS ARSENIC IN INTERFACE MIXING IN LOW-TEMPERATURE-GROWN ALAS GAAS SUPERLATTICES/, Applied physics letters, 67(9), 1995, pp. 1244-1246

Authors: TODD M MATSUNAGA P KOUVETAKIS J CHANDRASEKHAR D SMITH DJ
Citation: M. Todd et al., GROWTH OF HETEROEPITAXIAL SI1-X-YGEXCY ALLOYS ON SILICON USING NOVEL DEPOSITION CHEMISTRY, Applied physics letters, 67(9), 1995, pp. 1247-1249

Authors: PING AT ADESIDA I KHAN MA
Citation: At. Ping et al., STUDY OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAN USING HCL-GAS, Applied physics letters, 67(9), 1995, pp. 1250-1252
Risultati: 1-25 | 26-50 | 51-75 | 76-100 | >>