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Table of contents of journal: *Applied physics letters

Results: 1-25/1708

Authors: HIKITA M SHUTO Y AMANO M YOSHIMURA R TOMARU S KOZAWAGUCHI H
Citation: M. Hikita et al., OPTICAL-INTENSITY MODULATION IN A VERTICALLY STACKED COUPLER INCORPORATING ELECTROOPTIC POLYMER, Applied physics letters, 63(9), 1993, pp. 1161-1163

Authors: KOCK A SEEBERG A ROSENBERGER M GMACHL C GORNIK E THANNER C KORTE L
Citation: A. Kock et al., NOVEL SURFACE-EMITTING GAAS ALGAAS LASER-DIODES BASED ON SURFACE-MODEEMISSION/, Applied physics letters, 63(9), 1993, pp. 1164-1166

Authors: GUPTA MC RISK WP NUTT ACG LAU SD
Citation: Mc. Gupta et al., DOMAIN INVERSION IN KTIOPO4 USING ELECTRON-BEAM SCANNING, Applied physics letters, 63(9), 1993, pp. 1167-1169

Authors: XU CQ OKAYAMA H SHINOZAKI K WATANABE K KAWAHARA M
Citation: Cq. Xu et al., WAVELENGTH CONVERSIONS SIMILAR-TO-1.5-MU BY DIFFERENCE-FREQUENCY-GENERATION IN PERIODICALLY DOMAIN-INVERTED LINBO3 CHANNEL WAVE-GUIDES, Applied physics letters, 63(9), 1993, pp. 1170-1172

Authors: SHI RF WU MH YAMADA S CAI YM GARITO AF
Citation: Rf. Shi et al., DISPERSION OF 2ND-ORDER OPTICAL-PROPERTIES OF NEW HIGH THERMAL-STABILITY GUEST CHROMOPHORES, Applied physics letters, 63(9), 1993, pp. 1173-1175

Authors: NAGATA H KIUCHI K SUGAMATA T
Citation: H. Nagata et al., REFRACTIVE-INDEX FLUCTUATIONS IN DEFORMED TI-LINBO3 WAVE-GUIDES DUE TO SIO2 OVERLAYER DEPOSITION, Applied physics letters, 63(9), 1993, pp. 1176-1178

Authors: ZHOU JH PARK N DAWSON JW VAHALA KJ NEWKIRK MA MILLER BI
Citation: Jh. Zhou et al., TERAHERTZ 4-WAVE-MIXING SPECTROSCOPY FOR STUDY OF ULTRAFAST DYNAMICS IN A SEMICONDUCTOR OPTICAL AMPLIFIER, Applied physics letters, 63(9), 1993, pp. 1179-1181

Authors: LOUGHIN S FRENCH RH CHING WY XU YN SLACK GA
Citation: S. Loughin et al., ELECTRONIC-STRUCTURE OF ALUMINUM NITRIDE - THEORY AND EXPERIMENT, Applied physics letters, 63(9), 1993, pp. 1182-1184

Authors: JAKUBOWICZ A OOSENBRUG A FORSTER T
Citation: A. Jakubowicz et al., LASER OPERATION-INDUCED MIGRATION OF BERYLLIUM AT MIRRORS OF GAAS ALGAAS LASER-DIODES/, Applied physics letters, 63(9), 1993, pp. 1185-1187

Authors: CHO Y MIYAGAWA N
Citation: Y. Cho et N. Miyagawa, SURFACE-ACOUSTIC-WAVE SOLITON PROPAGATING ON THE METALLIC GRATING WAVE-GUIDE, Applied physics letters, 63(9), 1993, pp. 1188-1190

Authors: SCHLEICHER B BURTSCHER H SIEGMANN HC
Citation: B. Schleicher et al., PHOTOELECTRIC QUANTUM YIELD OF NANOMETER METAL PARTICLES, Applied physics letters, 63(9), 1993, pp. 1191-1193

Authors: IEMBO A FUSO F ALLEGRINI M ARIMONDO E BERARDI V SPINELLI N LECCABUE F WATTS BE FRANCO G CHIORBOLI G
Citation: A. Iembo et al., IN-SITU DIAGNOSTICS OF PULSED-LASER DEPOSITION OF FERROELECTRIC PB(TI0.48ZR0.52)O3 ON SI, Applied physics letters, 63(9), 1993, pp. 1194-1196

Authors: TUNG CH LEE KY DENG RC LEE LS
Citation: Ch. Tung et al., OBSERVATIONS ON INTERFACIAL SEGREGATION AND PRECIPITATION OF ARSENIC-DOPED POLYCRYSTALLINE SILICON ON SILICON (100) SUBSTRATE, Applied physics letters, 63(9), 1993, pp. 1197-1199

Authors: FREEMAN MR NUNES G
Citation: Mr. Freeman et G. Nunes, STUDIES OF DYNAMIC MAGNETOSTRICTION BY TIME-RESOLVED SCANNING FIBER INTERFEROMETRY, Applied physics letters, 63(9), 1993, pp. 1200-1202

Authors: JIANG X SCHIFFMANN K WESTPHAL A KLAGES CP
Citation: X. Jiang et al., ATOMIC-FORCE-MICROSCOPIC STUDY OF HETEROEPITAXIAL DIAMOND NUCLEATION ON (100) SILICON, Applied physics letters, 63(9), 1993, pp. 1203-1205

Authors: GHEZZO M BROWN DM DOWNEY E KRETCHMER J KOPANSKI JJ
Citation: M. Ghezzo et al., BORON-IMPLANTED 6H-SIC DIODES, Applied physics letters, 63(9), 1993, pp. 1206-1208

Authors: FUTAGI T MATSUMOTO T KATSUNO M OHTA Y MIMURA H KITAMURA K
Citation: T. Futagi et al., VISIBLE-LIGHT EMISSION FROM A PN JUNCTION OF POROUS SILICON AND MICROCRYSTALLINE SILICON-CARBIDE, Applied physics letters, 63(9), 1993, pp. 1209-1210

Authors: WONG KC KRISHNAMURTHY M BRAR B YI JC KROEMER H ENGLISH JH
Citation: Kc. Wong et al., GROWTH AND CHARACTERIZATION OF SERPENTINE SUPERLATTICES IN THE GASB-ALSB SYSTEM, Applied physics letters, 63(9), 1993, pp. 1211-1213

Authors: KHAN MA BHATTARAI A KUZNIA JN OLSON DT
Citation: Ma. Khan et al., HIGH-ELECTRON-MOBILITY TRANSISTOR BASED ON A GAN-ALXGA1-XN HETEROJUNCTION, Applied physics letters, 63(9), 1993, pp. 1214-1215

Authors: OHSHITA Y HOSOI N
Citation: Y. Ohshita et N. Hosoi, IN-SITU OPTICAL INVESTIGATION OF THE ETCHING PROCESS IN THE SILICON HCL SYSTEM, Applied physics letters, 63(9), 1993, pp. 1216-1218

Authors: SHIEH TH LEE SC
Citation: Th. Shieh et Sc. Lee, RESONANT-TUNNELING OF X-BAND ELECTRONS FROM ALAS THROUGH GAAS ALAS/GAAS DOUBLE-BARRIER STRUCTURE/, Applied physics letters, 63(9), 1993, pp. 1219-1221

Authors: RAPPEN T MOHS G WEGENER M
Citation: T. Rappen et al., DEPHASING OF 3-DIMENSIONAL AND 2-DIMENSIONAL MAGNETOEXCITONS IN INXGA1-XAS, Applied physics letters, 63(9), 1993, pp. 1222-1224

Authors: SANGANERIA MK VIOLETTE KE OZTURK MC
Citation: Mk. Sanganeria et al., LOW-TEMPERATURE SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR USING DISILANE, Applied physics letters, 63(9), 1993, pp. 1225-1227

Authors: EPLER JE SCHWEIZER HP
Citation: Je. Epler et Hp. Schweizer, EVOLUTION OF MONOLAYER TERRACE TOPOGRAPHY DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF (100) GAAS, Applied physics letters, 63(9), 1993, pp. 1228-1230

Authors: LOOK DC HE Y RAMDANI J ELMASRY N BEDAIR SM
Citation: Dc. Look et al., SEMIINSULATING NATURE OF GAS-SOURCE MOLECULAR-BEAM EPITAXIAL INGAP GROWN AT VERY-LOW TEMPERATURES, Applied physics letters, 63(9), 1993, pp. 1231-1233
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