Results: 201-225/21738
Authors:
Grill, A
Patel, V
Citation: A. Grill et V. Patel, Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition, APPL PHYS L, 79(6), 2001, pp. 803-805
Authors:
Park, BE
Ishiwara, H
Citation: Be. Park et H. Ishiwara, Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures, APPL PHYS L, 79(6), 2001, pp. 806-808
Authors:
Li, X
Mamchik, A
Chen, IW
Citation: X. Li et al., Stability of electrodeless ferroelectric domains near a ferroelectric/dielectric interface, APPL PHYS L, 79(6), 2001, pp. 809-811
Authors:
Ni, HQ
Lu, YF
Liu, ZY
Qiu, H
Wang, WJ
Ren, ZM
Chow, SK
Jie, YX
Citation: Hq. Ni et al., Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy, APPL PHYS L, 79(6), 2001, pp. 812-814
Authors:
Corbett, MH
Bowman, RM
Gregg, JM
Foord, DT
Citation: Mh. Corbett et al., Enhancement of dielectric constant and associated coupling of polarizationbehavior in thin film relaxor superlattices, APPL PHYS L, 79(6), 2001, pp. 815-817
Authors:
Ang, C
Yu, Z
Cross, LE
Guo, RY
Bhalla, AS
Citation: C. Ang et al., Dielectric relaxation and conduction in SrTiO3 thin films under dc bias, APPL PHYS L, 79(6), 2001, pp. 818-820
Authors:
Lee, K
Rhee, BR
Lee, C
Citation: K. Lee et al., Characteristics of ferroelectric Pb(Zr,Ti)O-3 thin films having Pt/PtOx electrode barriers, APPL PHYS L, 79(6), 2001, pp. 821-823
Authors:
Kluth, P
Zhao, QT
Winnerl, S
Lenk, S
Mantl, S
Citation: P. Kluth et al., Fabrication of epitaxial CoSi2 nanowires, APPL PHYS L, 79(6), 2001, pp. 824-826
Authors:
Gong, WZ
Zhao, BR
Cai, C
Lin, Y
Citation: Wz. Gong et al., Coherent nanoscale islands on La0.5Ca0.5MnO3 thin films and the enhancement of magnetoresistance, APPL PHYS L, 79(6), 2001, pp. 827-829
Authors:
van Oijen, AM
Verberk, R
Durand, Y
Schmidt, J
van Lingen, JNJ
Bol, AA
Meijerink, A
Citation: Am. Van Oijen et al., Continuous-wave two-photon excitation of individual CdS nanocrystallites, APPL PHYS L, 79(6), 2001, pp. 830-832
Authors:
Stevenson, R
Riehn, R
Milner, RG
Richards, D
Moons, E
Kang, DJ
Blamire, M
Morgado, J
Cacialli, F
Citation: R. Stevenson et al., Ultraviolet-visible near-field microscopy of phase-separated blends of polyfluorene-based conjugated semiconductors, APPL PHYS L, 79(6), 2001, pp. 833-835
Authors:
Zhou, G
Duan, WH
Gu, BL
Citation: G. Zhou et al., Dimensional effects on field emission properties of the body for single-walled carbon nanotube, APPL PHYS L, 79(6), 2001, pp. 836-838
Authors:
Zheng, MJ
Zhang, LD
Li, GH
Zhang, XY
Wang, XF
Citation: Mj. Zheng et al., Ordered indium-oxide nanowire arrays and their photoluminescence properties, APPL PHYS L, 79(6), 2001, pp. 839-841
Authors:
Kundu, M
Miyata, N
Ichikawa, M
Citation: M. Kundu et al., Selective thermal desorption of ultrathin aluminum oxide layers induced byelectron beams, APPL PHYS L, 79(6), 2001, pp. 842-844
Authors:
Zhang, W
Chou, SY
Citation: W. Zhang et Sy. Chou, Multilevel nanoimprint lithography with submicron alignment over 4 in. Si wafers, APPL PHYS L, 79(6), 2001, pp. 845-847
Authors:
Park, C
Cheng, JY
Fasolka, MJ
Mayes, AM
Ross, CA
Thomas, EL
De Rosa, C
Citation: C. Park et al., Double textured cylindrical block copolymer domains via directional solidification on a topographically patterned substrate, APPL PHYS L, 79(6), 2001, pp. 848-850
Authors:
Khitun, A
Wang, KL
Citation: A. Khitun et Kl. Wang, Modification of the three-phonon Umklapp process in a quantum wire, APPL PHYS L, 79(6), 2001, pp. 851-853
Authors:
Volk, T
Ivleva, L
Lykov, P
Isakov, D
Osiko, V
Wohlecke, M
Citation: T. Volk et al., Modification of the optical and photorefractive properties of Ce-doped strontium-barium niobate by co-doping with a nonphotorefractive La impurity, APPL PHYS L, 79(6), 2001, pp. 854-856
Authors:
Higgins, RWT
Monkman, AP
Nothofer, HG
Scherf, U
Citation: Rwt. Higgins et al., Effects of singlet and triplet energy transfer to molecular dopants in polymer light-emitting diodes and their usefulness in chromaticity tuning, APPL PHYS L, 79(6), 2001, pp. 857-859
Authors:
Kim, JS
Choi, HH
Son, SH
Choi, SY
Citation: Js. Kim et al., Schottky barrier rectifier with high current density using vanadium as barrier metal, APPL PHYS L, 79(6), 2001, pp. 860-862
Authors:
Cheng, K
Leburton, JP
Hess, K
Lyding, JW
Citation: K. Cheng et al., On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors, APPL PHYS L, 79(6), 2001, pp. 863-865
Authors:
Rumyantsev, SL
Pala, N
Shur, MS
Gaska, R
Levinshtein, ME
Adivarahan, V
Yang, J
Simin, G
Asif Khan, M
Citation: Sl. Rumyantsev et al., Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors, APPL PHYS L, 79(6), 2001, pp. 866-868
Authors:
Volz, J
Kurtsiefer, C
Weinfurter, H
Citation: J. Volz et al., Compact all-solid-state source of polarization-entangled photon pairs, APPL PHYS L, 79(6), 2001, pp. 869-871
Authors:
Ye, YH
Badilescu, S
Truong, VV
Rochon, P
Natansohn, A
Citation: Yh. Ye et al., Self-assembly of colloidal spheres on patterned substrates, APPL PHYS L, 79(6), 2001, pp. 872-874
Authors:
Krishnamurthy, S
Reiten, MT
Harmon, SA
Cheville, RA
Citation: S. Krishnamurthy et al., Characterization of thin polymer films using terahertz time-domain interferometry, APPL PHYS L, 79(6), 2001, pp. 875-877