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Table of contents of journal: *Applied physics letters

Results: 176-200/21738

Authors: Liu, H Zhu, YY Zhu, SN Zhang, C Ming, NB
Citation: H. Liu et al., Aperiodic optical superlattices engineered for optical frequency conversion, APPL PHYS L, 79(6), 2001, pp. 728-730

Authors: Romanov, SG Maka, T Torres, CMS Muller, M Zentel, R
Citation: Sg. Romanov et al., Emission in a SnS2 inverted opaline photonic crystal, APPL PHYS L, 79(6), 2001, pp. 731-733

Authors: Eremenko, VV Gnatchenko, SL Kachur, IS Piryatinskaya, VG Kosmyna, MB Nazarenko, BP Puzikov, VM
Citation: Vv. Eremenko et al., Photoinduced optical absorption in Ca3Ga2Ge3O12 : Mn garnet, APPL PHYS L, 79(6), 2001, pp. 734-736

Authors: Lee, H Lee, S Furdyna, JK
Citation: H. Lee et al., Ellipsometric study of sinusoidally modulated ZnSeTe superlattices, APPL PHYS L, 79(6), 2001, pp. 737-739

Authors: Hao, JH Cocivera, M
Citation: Jh. Hao et M. Cocivera, Luminescent characteristics of blue-emitting Sr2B5O9Cl : Eu thin-film phosphors, APPL PHYS L, 79(6), 2001, pp. 740-742

Authors: Zhuang, YX Jiang, JZ Lin, ZG Mezouar, M Crichton, W Inoue, A
Citation: Yx. Zhuang et al., Evidence of eutectic crystallization and transient nucleation in Al89La6Ni5 amorphous alloy, APPL PHYS L, 79(6), 2001, pp. 743-745

Authors: Murata, T Nakazawa, H Tsukidate, Y Suemitsu, M
Citation: T. Murata et al., Role of adsorption kinetics in the low-temperature Si growth by gas-sourcemolecular beam epitaxy: In situ observations and detailed modeling of the growth, APPL PHYS L, 79(6), 2001, pp. 746-748

Authors: Barabash, R Ice, GE Larson, BC Pharr, GM Chung, KS Yang, W
Citation: R. Barabash et al., White microbeam diffraction from distorted crystals, APPL PHYS L, 79(6), 2001, pp. 749-751

Authors: Koshka, Y Mazzola, MS
Citation: Y. Koshka et Ms. Mazzola, Effect of hydrogenation on Al-related photoluminescence in 6H-SiC, APPL PHYS L, 79(6), 2001, pp. 752-754

Authors: Nakazawa, H Suemitsu, M
Citation: H. Nakazawa et M. Suemitsu, Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy, APPL PHYS L, 79(6), 2001, pp. 755-757

Authors: Haruyama, O Miyazawa, T Saida, J Inoue, A
Citation: O. Haruyama et al., Change in electrical resistivity due to icosahedral phase precipitation inZr70Pd20Ni10 and Zr65Al7.5Cu7.5Ni10Ag10 glasses, APPL PHYS L, 79(6), 2001, pp. 758-760

Authors: Hsu, JWP Matthews, MJ Abusch-Magder, D Kleiman, RN Lang, DV Richter, S Gu, SL Kuech, TF
Citation: Jwp. Hsu et al., Spatial variation of electrical properties in lateral epitaxially overgrown GaN, APPL PHYS L, 79(6), 2001, pp. 761-763

Authors: Okuno, T Masumoto, Y Sakuma, Y Hayasaki, Y Okamoto, H
Citation: T. Okuno et al., Femtosecond response time in beryllium-doped low-temperature-grown GaAs/AlAs multiple quantum wells, APPL PHYS L, 79(6), 2001, pp. 764-766

Authors: Amy, F Enriquez, H Soukiassian, P Brylinski, C Mayne, A Dujardin, G
Citation: F. Amy et al., Si/6H-SiC(0001): An unexpected cubic 4x3 Si phase overlayer, APPL PHYS L, 79(6), 2001, pp. 767-769

Authors: Cummings, MD Elezzabi, AY
Citation: Md. Cummings et Ay. Elezzabi, Ultrafast impulsive excitation of coherent longitudinal acoustic phonon oscillations in highly photoexcited InSb, APPL PHYS L, 79(6), 2001, pp. 770-772

Authors: Luo, HL Chang, YC Wong, KS Wang, Y
Citation: Hl. Luo et al., Ultrasensitive Si phototransistors with a punchthrough base, APPL PHYS L, 79(6), 2001, pp. 773-775

Authors: Yang, YML Jacobson, AJ Chen, CL Luo, GP Ross, KD Chu, CW
Citation: Yml. Yang et al., Oxygen exchange kinetics on a highly oriented La0.5Sr0.5CoO3-delta thin film prepared by pulsed-laser deposition, APPL PHYS L, 79(6), 2001, pp. 776-778

Authors: Feller, F Geschke, D Monkman, AP
Citation: F. Feller et al., Spatial distribution of space charge in conjugated polymers, APPL PHYS L, 79(6), 2001, pp. 779-781

Authors: Maksimov, O Tamargo, MC
Citation: O. Maksimov et Mc. Tamargo, Direct-to-indirect band gap crossover for the BexZn1-xTe alloy, APPL PHYS L, 79(6), 2001, pp. 782-784

Authors: Chang, JH Takai, T Koo, BH Song, JS Handa, T Yao, T
Citation: Jh. Chang et al., Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy, APPL PHYS L, 79(6), 2001, pp. 785-787

Authors: Seo, YJ Lofgrene, JC Tsu, R
Citation: Yj. Seo et al., Transport through a nine period silicon/oxygen superlattice, APPL PHYS L, 79(6), 2001, pp. 788-790

Authors: Boer, EA Brongersma, ML Atwater, HA Flagan, RC Bell, LD
Citation: Ea. Boer et al., Localized charge injection in SiO2 films containing silicon nanocrystals, APPL PHYS L, 79(6), 2001, pp. 791-793

Authors: Attane, JP Samson, Y Marty, A Halley, D Beigne, C
Citation: Jp. Attane et al., Domain wall pinning on strain relaxation defects in FePt(001)/Pt thin films, APPL PHYS L, 79(6), 2001, pp. 794-796

Authors: Zhang, Y Warren, PJ Cerezo, A Harland, CL Davies, HA
Citation: Y. Zhang et al., Partitioning behavior and the effect of Co on the Curie temperature of nanocomposite PrFeCoB hard magnetic alloys, APPL PHYS L, 79(6), 2001, pp. 797-799

Authors: Dhote, AM Auciello, O Gruen, DM Ramesh, R
Citation: Am. Dhote et al., Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques, APPL PHYS L, 79(6), 2001, pp. 800-802
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