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Table of contents of journal: *Applied physics letters

Results: 126-150/21738

Authors: Lin, BX Fu, ZX Jia, YB
Citation: Bx. Lin et al., Green luminescent center in undoped zinc oxide films deposited on silicon substrates, APPL PHYS L, 79(7), 2001, pp. 943-945

Authors: Mock, P Topuria, T Browning, ND Booker, GR Mason, NJ Nicholas, RJ Dobrowolska, M Lee, S Furdyna, JK
Citation: P. Mock et al., Internal self-ordering in In(Sb,As), (In,Ga)Sb, and (Cd,Zn,Mn)Se nano-agglomerates/quantum dots, APPL PHYS L, 79(7), 2001, pp. 946-948

Authors: Cheng, YT Huang, YS Lin, DY Tiong, KK Pollak, FH Evans, KR
Citation: Yt. Cheng et al., Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAspseudomorphic high electron mobility transistor structure, APPL PHYS L, 79(7), 2001, pp. 949-951

Authors: Schuck, PJ Mason, MD Grober, RD Ambacher, O Lima, AP Miskys, C Dimitrov, R Stutzmann, M
Citation: Pj. Schuck et al., Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures, APPL PHYS L, 79(7), 2001, pp. 952-954

Authors: Tanaka, S Honda, Y Sawaki, N Hibino, M
Citation: S. Tanaka et al., Structural characterization of GaN laterally overgrown on a (111)Si substrate, APPL PHYS L, 79(7), 2001, pp. 955-957

Authors: Luo, XD Xu, ZY Ge, WK Pan, Z Li, LH Lin, YW
Citation: Xd. Luo et al., Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum wellunder short pulse excitation, APPL PHYS L, 79(7), 2001, pp. 958-960

Authors: Albrecht, F Grillenberger, J Pasold, G Witthuhn, W Achtziger, N
Citation: F. Albrecht et al., Radiotracer investigation of a deep Be-related band gap state in 4H-SiC, APPL PHYS L, 79(7), 2001, pp. 961-963

Authors: Riech, I Gomez-Herrera, ML Diaz, P Mendoza-Alvarez, JG Herrera-Perez, JL Marin, E
Citation: I. Riech et al., Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique, APPL PHYS L, 79(7), 2001, pp. 964-966

Authors: Liu, WC Yu, KH Liu, RC Lin, KW Cheng, CC Lin, KP Yen, CH Wu, CZ
Citation: Wc. Liu et al., Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure forhigh-breakdown, low-leakage, and high-temperature applications, APPL PHYS L, 79(7), 2001, pp. 967-969

Authors: Kang, Y Mages, P Clawson, AR Lau, SS Lo, YH Yu, PKL Pauchard, A Zhu, Z Zhou, Y
Citation: Y. Kang et al., Wafer-fused p-i-n InGaAs/Si photodiode with photogain, APPL PHYS L, 79(7), 2001, pp. 970-972

Authors: Lazar, HR Misra, V Johnson, RS Lucovsky, G
Citation: Hr. Lazar et al., Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices, APPL PHYS L, 79(7), 2001, pp. 973-975

Authors: Jeong, MS Kim, JY Kim, YW White, JO Suh, EK Hong, CH Lee, HJ
Citation: Ms. Jeong et al., Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy, APPL PHYS L, 79(7), 2001, pp. 976-978

Authors: Barabash, SV Stroud, D
Citation: Sv. Barabash et D. Stroud, Negative magnetoresistance produced by Hall fluctuations in a ferromagnetic domain structure, APPL PHYS L, 79(7), 2001, pp. 979-981

Authors: Kang, WN Jung, CU Kim, KHP Park, MS Lee, SY Kim, HJ Choi, EM Kim, KH Kim, MS Lee, SI
Citation: Wn. Kang et al., Hole carrier in MgB2 characterized by Hall measurements, APPL PHYS L, 79(7), 2001, pp. 982-984

Authors: Hase, TPA Fulthorpe, BD Wilkins, SB Tanner, BK Marrows, CH Hickey, BJ
Citation: Tpa. Hase et al., Weak magnetic moment on IrMn exchange bias pinning layers, APPL PHYS L, 79(7), 2001, pp. 985-987

Authors: Ueda, K Tabata, H Kawai, T
Citation: K. Ueda et al., Magnetic and electric properties of transition-metal-doped ZnO films, APPL PHYS L, 79(7), 2001, pp. 988-990

Authors: Temst, K Van Bael, MJ Fritzsche, H
Citation: K. Temst et al., Application of off-specular polarized neutron reflectometry to measurements on an array of mesoscopic ferromagnetic disks, APPL PHYS L, 79(7), 2001, pp. 991-993

Authors: Borsa, DM Grachev, S Boerma, DO Kerssemakers, JWJ
Citation: Dm. Borsa et al., High-quality epitaxial iron nitride films grown by gas-assisted molecular-beam epitaxy, APPL PHYS L, 79(7), 2001, pp. 994-996

Authors: Antel, WJ Coulthard, I Freeland, JW Stampfl, APJ Schwickert, MM
Citation: Wj. Antel et al., Method for the measurement of anisotropy and rotational hysteresis using linear dichroism, APPL PHYS L, 79(7), 2001, pp. 997-999

Authors: Aratani, M Oikawa, T Ozeki, T Funakubo, H
Citation: M. Aratani et al., Epitaxial-grade polycrystalline Pb(Zr,Ti)O-3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition, APPL PHYS L, 79(7), 2001, pp. 1000-1002

Authors: Xie, JQ Dong, JW Lu, J Palmstrom, CJ McKernan, S
Citation: Jq. Xie et al., Epitaxial growth of ferromagnetic Ni2MnIn on (001) InAs, APPL PHYS L, 79(7), 2001, pp. 1003-1005

Authors: Viehland, D Amin, A Li, JF
Citation: D. Viehland et al., Piezoelectric instability in < 011 >-oriented Pb((B1/3B2/3II)-B-I)O-3-PbTiO3 crystals, APPL PHYS L, 79(7), 2001, pp. 1006-1008

Authors: Schubert, M May, T Wende, G Fritzsch, L Meyer, HG
Citation: M. Schubert et al., Coplanar strips for Josephson voltage standard circuits, APPL PHYS L, 79(7), 2001, pp. 1009-1011

Authors: Jeon, YA Choi, ES Seo, TS Yoon, SG
Citation: Ya. Jeon et al., Improvements in tunability of (Ba0.5Sr0.5)TiO3 thin films by use of metalorganic chemical vapor deposited (Ba,Sr)RuO3 interfacial layers, APPL PHYS L, 79(7), 2001, pp. 1012-1014

Authors: Ding, Y Liu, JS MacLaren, I Wang, YN
Citation: Y. Ding et al., Ferroelectric switching mechanism in SrBi2Ta2O9, APPL PHYS L, 79(7), 2001, pp. 1015-1017
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