Results: 126-150/21738
Authors:
Lin, BX
Fu, ZX
Jia, YB
Citation: Bx. Lin et al., Green luminescent center in undoped zinc oxide films deposited on silicon substrates, APPL PHYS L, 79(7), 2001, pp. 943-945
Authors:
Mock, P
Topuria, T
Browning, ND
Booker, GR
Mason, NJ
Nicholas, RJ
Dobrowolska, M
Lee, S
Furdyna, JK
Citation: P. Mock et al., Internal self-ordering in In(Sb,As), (In,Ga)Sb, and (Cd,Zn,Mn)Se nano-agglomerates/quantum dots, APPL PHYS L, 79(7), 2001, pp. 946-948
Authors:
Cheng, YT
Huang, YS
Lin, DY
Tiong, KK
Pollak, FH
Evans, KR
Citation: Yt. Cheng et al., Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAspseudomorphic high electron mobility transistor structure, APPL PHYS L, 79(7), 2001, pp. 949-951
Authors:
Schuck, PJ
Mason, MD
Grober, RD
Ambacher, O
Lima, AP
Miskys, C
Dimitrov, R
Stutzmann, M
Citation: Pj. Schuck et al., Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures, APPL PHYS L, 79(7), 2001, pp. 952-954
Authors:
Tanaka, S
Honda, Y
Sawaki, N
Hibino, M
Citation: S. Tanaka et al., Structural characterization of GaN laterally overgrown on a (111)Si substrate, APPL PHYS L, 79(7), 2001, pp. 955-957
Authors:
Luo, XD
Xu, ZY
Ge, WK
Pan, Z
Li, LH
Lin, YW
Citation: Xd. Luo et al., Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum wellunder short pulse excitation, APPL PHYS L, 79(7), 2001, pp. 958-960
Authors:
Albrecht, F
Grillenberger, J
Pasold, G
Witthuhn, W
Achtziger, N
Citation: F. Albrecht et al., Radiotracer investigation of a deep Be-related band gap state in 4H-SiC, APPL PHYS L, 79(7), 2001, pp. 961-963
Authors:
Riech, I
Gomez-Herrera, ML
Diaz, P
Mendoza-Alvarez, JG
Herrera-Perez, JL
Marin, E
Citation: I. Riech et al., Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique, APPL PHYS L, 79(7), 2001, pp. 964-966
Authors:
Liu, WC
Yu, KH
Liu, RC
Lin, KW
Cheng, CC
Lin, KP
Yen, CH
Wu, CZ
Citation: Wc. Liu et al., Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure forhigh-breakdown, low-leakage, and high-temperature applications, APPL PHYS L, 79(7), 2001, pp. 967-969
Authors:
Kang, Y
Mages, P
Clawson, AR
Lau, SS
Lo, YH
Yu, PKL
Pauchard, A
Zhu, Z
Zhou, Y
Citation: Y. Kang et al., Wafer-fused p-i-n InGaAs/Si photodiode with photogain, APPL PHYS L, 79(7), 2001, pp. 970-972
Authors:
Lazar, HR
Misra, V
Johnson, RS
Lucovsky, G
Citation: Hr. Lazar et al., Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices, APPL PHYS L, 79(7), 2001, pp. 973-975
Authors:
Jeong, MS
Kim, JY
Kim, YW
White, JO
Suh, EK
Hong, CH
Lee, HJ
Citation: Ms. Jeong et al., Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy, APPL PHYS L, 79(7), 2001, pp. 976-978
Authors:
Barabash, SV
Stroud, D
Citation: Sv. Barabash et D. Stroud, Negative magnetoresistance produced by Hall fluctuations in a ferromagnetic domain structure, APPL PHYS L, 79(7), 2001, pp. 979-981
Authors:
Kang, WN
Jung, CU
Kim, KHP
Park, MS
Lee, SY
Kim, HJ
Choi, EM
Kim, KH
Kim, MS
Lee, SI
Citation: Wn. Kang et al., Hole carrier in MgB2 characterized by Hall measurements, APPL PHYS L, 79(7), 2001, pp. 982-984
Authors:
Hase, TPA
Fulthorpe, BD
Wilkins, SB
Tanner, BK
Marrows, CH
Hickey, BJ
Citation: Tpa. Hase et al., Weak magnetic moment on IrMn exchange bias pinning layers, APPL PHYS L, 79(7), 2001, pp. 985-987
Authors:
Ueda, K
Tabata, H
Kawai, T
Citation: K. Ueda et al., Magnetic and electric properties of transition-metal-doped ZnO films, APPL PHYS L, 79(7), 2001, pp. 988-990
Authors:
Temst, K
Van Bael, MJ
Fritzsche, H
Citation: K. Temst et al., Application of off-specular polarized neutron reflectometry to measurements on an array of mesoscopic ferromagnetic disks, APPL PHYS L, 79(7), 2001, pp. 991-993
Authors:
Borsa, DM
Grachev, S
Boerma, DO
Kerssemakers, JWJ
Citation: Dm. Borsa et al., High-quality epitaxial iron nitride films grown by gas-assisted molecular-beam epitaxy, APPL PHYS L, 79(7), 2001, pp. 994-996
Authors:
Antel, WJ
Coulthard, I
Freeland, JW
Stampfl, APJ
Schwickert, MM
Citation: Wj. Antel et al., Method for the measurement of anisotropy and rotational hysteresis using linear dichroism, APPL PHYS L, 79(7), 2001, pp. 997-999
Authors:
Aratani, M
Oikawa, T
Ozeki, T
Funakubo, H
Citation: M. Aratani et al., Epitaxial-grade polycrystalline Pb(Zr,Ti)O-3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition, APPL PHYS L, 79(7), 2001, pp. 1000-1002
Authors:
Xie, JQ
Dong, JW
Lu, J
Palmstrom, CJ
McKernan, S
Citation: Jq. Xie et al., Epitaxial growth of ferromagnetic Ni2MnIn on (001) InAs, APPL PHYS L, 79(7), 2001, pp. 1003-1005
Authors:
Viehland, D
Amin, A
Li, JF
Citation: D. Viehland et al., Piezoelectric instability in < 011 >-oriented Pb((B1/3B2/3II)-B-I)O-3-PbTiO3 crystals, APPL PHYS L, 79(7), 2001, pp. 1006-1008
Authors:
Schubert, M
May, T
Wende, G
Fritzsch, L
Meyer, HG
Citation: M. Schubert et al., Coplanar strips for Josephson voltage standard circuits, APPL PHYS L, 79(7), 2001, pp. 1009-1011
Authors:
Jeon, YA
Choi, ES
Seo, TS
Yoon, SG
Citation: Ya. Jeon et al., Improvements in tunability of (Ba0.5Sr0.5)TiO3 thin films by use of metalorganic chemical vapor deposited (Ba,Sr)RuO3 interfacial layers, APPL PHYS L, 79(7), 2001, pp. 1012-1014
Authors:
Ding, Y
Liu, JS
MacLaren, I
Wang, YN
Citation: Y. Ding et al., Ferroelectric switching mechanism in SrBi2Ta2O9, APPL PHYS L, 79(7), 2001, pp. 1015-1017