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Table of contents of journal: *Applied physics letters

Results: 101-125/21738

Authors: Murata, K Cina, S Greenham, NC
Citation: K. Murata et al., Barriers to electron extraction in polymer light-emitting diodes, APPL PHYS L, 79(8), 2001, pp. 1193-1195

Authors: Shigekawa, N Shiojima, K Suemitsu, T
Citation: N. Shigekawa et al., Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors, APPL PHYS L, 79(8), 2001, pp. 1196-1198

Authors: Astafiev, O Komiyama, S Kutsuwa, T
Citation: O. Astafiev et al., Double quantum dots as a high sensitive submillimeter-wave detector, APPL PHYS L, 79(8), 2001, pp. 1199-1201

Authors: Chen, LH Topinka, MA LeRoy, BJ Westervelt, RM Maranowski, KD Gossard, AC
Citation: Lh. Chen et al., Charge-imaging field-effect transistor, APPL PHYS L, 79(8), 2001, pp. 1202-1204

Authors: Zhu, FR Low, BL Zhang, KR Chua, SJ
Citation: Fr. Zhu et al., Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices, APPL PHYS L, 79(8), 2001, pp. 1205-1207

Authors: Smith, NI Fujita, K Kaneko, T Katoh, K Nakamura, O Kawata, S Takamatsu, T
Citation: Ni. Smith et al., Generation of calcium waves in living cells by pulsed-laser-induced photodisruption, APPL PHYS L, 79(8), 2001, pp. 1208-1210

Authors: Giannazzo, F Calcagno, L Raineri, V Ciampolini, L Ciappa, M Napolitani, E
Citation: F. Giannazzo et al., Quantitative carrier profiling in ion-implanted 6H-SiC, APPL PHYS L, 79(8), 2001, pp. 1211-1213

Authors: Simanovskii, D Palanker, D Cohn, K Smith, T
Citation: D. Simanovskii et al., Near-field infrared microscopy with a transient photoinduced aperture, APPL PHYS L, 79(8), 2001, pp. 1214-1216

Authors: Onoe, A Yoshida, A Chikuma, K
Citation: A. Onoe et al., Epitaxial growth of orientation-controlled KNbO3 crystal films on MgO using KTaxNb1-xO3 intermediate layer by metalorganic chemical vapor deposition (vol 78, pg 49, 2001), APPL PHYS L, 79(8), 2001, pp. 1217-1217

Authors: Ono, H Kawamura, T Kawatsuki, N Norisada, H
Citation: H. Ono et al., Intensity filtering of a two-dimensional optical image in high-performancephotorefractive mesogenic composites, APPL PHYS L, 79(7), 2001, pp. 895-897

Authors: Kono, S Tani, M Sakai, K
Citation: S. Kono et al., Ultrabroadband photoconductive detection: Comparison with free-space electro-optic sampling, APPL PHYS L, 79(7), 2001, pp. 898-900

Authors: Sarkisov, SS Curley, MJ Kukhtarev, NV Fields, A Adamovsky, G Smith, CC Moore, LE
Citation: Ss. Sarkisov et al., Holographic surface gratings in iron-doped lithium niobate, APPL PHYS L, 79(7), 2001, pp. 901-903

Authors: Eyres, LA Tourreau, PJ Pinguet, TJ Ebert, CB Harris, JS Fejer, MM Becouarn, L Gerard, B Lallier, E
Citation: La. Eyres et al., All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion, APPL PHYS L, 79(7), 2001, pp. 904-906

Authors: Mitrofanov, O Lee, M Hsu, JWP Pfeiffer, LN West, KW Wynn, JD Federici, JF
Citation: O. Mitrofanov et al., Terahertz pulse propagation through small apertures, APPL PHYS L, 79(7), 2001, pp. 907-909

Authors: Balistreri, MLM Korterik, JP Kuipers, L van Hulst, NF
Citation: Mlm. Balistreri et al., Visualization of mode transformation in a planar waveguide splitter by near-field optical phase imaging, APPL PHYS L, 79(7), 2001, pp. 910-912

Authors: Uhm, HS Choi, EH Choi, MC
Citation: Hs. Uhm et al., Forward current propagation beyond the virtual cathode formed by a high injection current, APPL PHYS L, 79(7), 2001, pp. 913-915

Authors: Chabert, P Cunge, G Booth, JP Perrin, J
Citation: P. Chabert et al., Reactive ion etching of silicon carbide in SF6 gas: Detection of CF, CF2, and SiF2 etch products, APPL PHYS L, 79(7), 2001, pp. 916-918

Authors: Bugaev, A Gushenets, V Yushkov, G Oks, E Kulevoy, T Hershcovitch, A Johnson, BM
Citation: A. Bugaev et al., Electron-beam enhancement of ion charge state fractions in the metal-vaporvacuum-arc ion source, APPL PHYS L, 79(7), 2001, pp. 919-921

Authors: Dmitriev, AP Kachorovskii, VY Shur, MS
Citation: Ap. Dmitriev et al., Plasma wave instability in gated collisionless two-dimensional electron gas, APPL PHYS L, 79(7), 2001, pp. 922-924

Authors: Zhang, J Kuokstis, E Fareed, Q Wang, H Yang, J Simin, G Khan, MA Gaska, R Shur, M
Citation: J. Zhang et al., Pulsed atomic layer epitaxy of quaternary AlInGaN layers, APPL PHYS L, 79(7), 2001, pp. 925-927

Authors: Chang, L Lai, SK Chen, FR Kai, JJ
Citation: L. Chang et al., Observations of Al segregation around dislocations in AlGaN, APPL PHYS L, 79(7), 2001, pp. 928-930

Authors: Jasinski, J Yu, KM Walukiewicz, W Washburn, J Liliental-Weber, Z
Citation: J. Jasinski et al., Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation, APPL PHYS L, 79(7), 2001, pp. 931-933

Authors: Ishii, M Komukai, Y
Citation: M. Ishii et Y. Komukai, Theoretical prediction of local distortion in an ErO6 cluster: Stabilization of a C-4v structure by a rack and pinion effect, APPL PHYS L, 79(7), 2001, pp. 934-936

Authors: Fujimori, H Kakihana, M Ioku, K Goto, S Yoshimura, M
Citation: H. Fujimori et al., Advantage of anti-Stokes Raman scattering for high-temperature measurements, APPL PHYS L, 79(7), 2001, pp. 937-939

Authors: Seomun, SS Vij, JK Hayashi, N Kato, T Fukuda, A
Citation: Ss. Seomun et al., Surface molecular alignment by in-plane anchoring in the cell showing the V-shaped switching, APPL PHYS L, 79(7), 2001, pp. 940-942
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