Results: 76-100/21738
Authors:
Kurtz, E
Schmidt, M
Baldauf, M
Wachter, S
Grun, M
Kalt, H
Klingshirn, C
Litvinov, D
Rosenauer, A
Gerthsen, D
Citation: E. Kurtz et al., Suppression of lateral fluctuations in CdSe-based quantum wells, APPL PHYS L, 79(8), 2001, pp. 1118-1120
Authors:
Mavroidis, C
Harris, JJ
Kappers, MJ
Sharma, N
Humphreys, CJ
Thrush, EJ
Citation: C. Mavroidis et al., Observation of thermally activated conduction at a GaN-sapphire interface, APPL PHYS L, 79(8), 2001, pp. 1121-1123
Authors:
Zilker, SJ
Detcheverry, C
Cantatore, E
de Leeuw, DM
Citation: Sj. Zilker et al., Bias stress in organic thin-film transistors and logic gates, APPL PHYS L, 79(8), 2001, pp. 1124-1126
Authors:
Zhang, XB
Ha, KL
Hark, SK
Citation: Xb. Zhang et al., Selenium-related luminescent centers in metalorganic chemical-vapor-phase deposition grown ZnSe epilayers on GaAs, APPL PHYS L, 79(8), 2001, pp. 1127-1129
Authors:
Jho, YD
Yahng, JS
Oh, E
Kim, DS
Citation: Yd. Jho et al., Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells, APPL PHYS L, 79(8), 2001, pp. 1130-1132
Authors:
Look, DC
Sizelove, JR
Citation: Dc. Look et Jr. Sizelove, Predicted maximum mobility in bulk GaN, APPL PHYS L, 79(8), 2001, pp. 1133-1135
Authors:
Ashley, T
Gordon, NT
Nash, GR
Jones, CL
Maxey, CD
Catchpole, RA
Citation: T. Ashley et al., Long-wavelength HgCdTe negative luminescent devices, APPL PHYS L, 79(8), 2001, pp. 1136-1138
Authors:
Li, S
Lee, YK
Zhang, L
Gao, W
Lee, KS
Citation: S. Li et al., Effective enhancement of C54TiSi(2) phase formation with multi-thermal-shock processing at 600 degrees C, APPL PHYS L, 79(8), 2001, pp. 1139-1141
Authors:
Sort, J
Nogues, J
Surinach, S
Munoz, JS
Baro, MD
Chappel, E
Dupont, F
Chouteau, G
Citation: J. Sort et al., Coercivity and squareness enhancement in ball-milled hard magnetic-antiferromagnetic composites, APPL PHYS L, 79(8), 2001, pp. 1142-1144
Authors:
Granata, C
Corato, V
Monaco, A
Ruggiero, B
Russo, M
Silvestrini, P
Citation: C. Granata et al., Stacked Josephson junctions in view of macroscopic quantum experiments, APPL PHYS L, 79(8), 2001, pp. 1145-1147
Authors:
Wang, WH
Wu, GH
Chen, JL
Gao, SX
Zhan, WS
Wen, GH
Zhang, XX
Citation: Wh. Wang et al., Intermartensitic transformation and magnetic-field-induced strain in Ni52Mn24.5Ga23.5 single crystals, APPL PHYS L, 79(8), 2001, pp. 1148-1150
Authors:
Hellwig, O
Weller, D
Kellock, AJ
Baglin, JEE
Fullerton, EE
Citation: O. Hellwig et al., Magnetic patterning of chemically-ordered CrPt3 films, APPL PHYS L, 79(8), 2001, pp. 1151-1153
Authors:
Zhao, Y
Feng, Y
Cheng, CH
Zhou, L
Wu, Y
Machi, T
Fudamoto, Y
Koshizuka, N
Murakami, M
Citation: Y. Zhao et al., High critical current density of MgB2 bulk superconductor doped with Ti and sintered at ambient pressure, APPL PHYS L, 79(8), 2001, pp. 1154-1156
Authors:
Sato, R
Mizushima, K
Citation: R. Sato et K. Mizushima, Spin-valve transistor with an Fe/Au/Fe(001) base, APPL PHYS L, 79(8), 2001, pp. 1157-1159
Authors:
Yoon, KS
Park, JH
Choi, JH
Yang, JY
Lee, CH
Kim, CO
Hong, JP
Kang, TW
Citation: Ks. Yoon et al., Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method, APPL PHYS L, 79(8), 2001, pp. 1160-1162
Authors:
Moorti, A
Sailaja, S
Naik, PA
Gupta, PD
Korobkin, YV
Romanov, IV
Rupasov, AA
Shikhanov, AS
Citation: A. Moorti et al., Laser-driven high-current-density pulsed electron emission from lead zirconium titanate ferroelectric ceramic, APPL PHYS L, 79(8), 2001, pp. 1163-1165
Authors:
Flores, JLP
Castaneda-Guzman, R
Villagran-Muniz, M
Huanosta-Tera, A
Citation: Jlp. Flores et al., Ferroparaelectric transitions in relaxor materials studied by a photoacoustic technique, APPL PHYS L, 79(8), 2001, pp. 1166-1168
Authors:
Hirayama, H
Kawamoto, Y
Ohshima, Y
Takayanagi, K
Citation: H. Hirayama et al., Nanospot welding of carbon nanotubes, APPL PHYS L, 79(8), 2001, pp. 1169-1171
Authors:
Wei, BQ
Vajtai, R
Ajayan, PM
Citation: Bq. Wei et al., Reliability and current carrying capacity of carbon nanotubes, APPL PHYS L, 79(8), 2001, pp. 1172-1174
Authors:
Baron, T
Gentile, P
Magnea, N
Mur, P
Citation: T. Baron et al., Single-electron charging effect in individual Si nanocrystals, APPL PHYS L, 79(8), 2001, pp. 1175-1177
Authors:
Merkulov, VI
Guillorn, MA
Lowndes, DH
Simpson, ML
Voelkl, E
Citation: Vi. Merkulov et al., Shaping carbon nanostructures by controlling the synthesis process, APPL PHYS L, 79(8), 2001, pp. 1178-1180
Authors:
Maeda, Y
Tabata, H
Kawai, T
Citation: Y. Maeda et al., Two-dimensional assembly of gold nanoparticles with a DNA network template, APPL PHYS L, 79(8), 2001, pp. 1181-1183
Authors:
Kawazoe, T
Yamamoto, Y
Ohtsu, M
Citation: T. Kawazoe et al., Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition, APPL PHYS L, 79(8), 2001, pp. 1184-1186
Authors:
Kim, C
Kim, B
Lee, SM
Jo, C
Lee, YH
Citation: C. Kim et al., Effect of electric field on the electronic structures of carbon nanotubes, APPL PHYS L, 79(8), 2001, pp. 1187-1189
Authors:
Hanbicki, AT
Magno, R
Cheng, SF
Park, YD
Bracker, AS
Jonker, BT
Citation: At. Hanbicki et al., Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode-giant magnetoresistance circuits, APPL PHYS L, 79(8), 2001, pp. 1190-1192