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Table of contents of journal: *Applied physics letters

Results: 76-100/21738

Authors: Kurtz, E Schmidt, M Baldauf, M Wachter, S Grun, M Kalt, H Klingshirn, C Litvinov, D Rosenauer, A Gerthsen, D
Citation: E. Kurtz et al., Suppression of lateral fluctuations in CdSe-based quantum wells, APPL PHYS L, 79(8), 2001, pp. 1118-1120

Authors: Mavroidis, C Harris, JJ Kappers, MJ Sharma, N Humphreys, CJ Thrush, EJ
Citation: C. Mavroidis et al., Observation of thermally activated conduction at a GaN-sapphire interface, APPL PHYS L, 79(8), 2001, pp. 1121-1123

Authors: Zilker, SJ Detcheverry, C Cantatore, E de Leeuw, DM
Citation: Sj. Zilker et al., Bias stress in organic thin-film transistors and logic gates, APPL PHYS L, 79(8), 2001, pp. 1124-1126

Authors: Zhang, XB Ha, KL Hark, SK
Citation: Xb. Zhang et al., Selenium-related luminescent centers in metalorganic chemical-vapor-phase deposition grown ZnSe epilayers on GaAs, APPL PHYS L, 79(8), 2001, pp. 1127-1129

Authors: Jho, YD Yahng, JS Oh, E Kim, DS
Citation: Yd. Jho et al., Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells, APPL PHYS L, 79(8), 2001, pp. 1130-1132

Authors: Look, DC Sizelove, JR
Citation: Dc. Look et Jr. Sizelove, Predicted maximum mobility in bulk GaN, APPL PHYS L, 79(8), 2001, pp. 1133-1135

Authors: Ashley, T Gordon, NT Nash, GR Jones, CL Maxey, CD Catchpole, RA
Citation: T. Ashley et al., Long-wavelength HgCdTe negative luminescent devices, APPL PHYS L, 79(8), 2001, pp. 1136-1138

Authors: Li, S Lee, YK Zhang, L Gao, W Lee, KS
Citation: S. Li et al., Effective enhancement of C54TiSi(2) phase formation with multi-thermal-shock processing at 600 degrees C, APPL PHYS L, 79(8), 2001, pp. 1139-1141

Authors: Sort, J Nogues, J Surinach, S Munoz, JS Baro, MD Chappel, E Dupont, F Chouteau, G
Citation: J. Sort et al., Coercivity and squareness enhancement in ball-milled hard magnetic-antiferromagnetic composites, APPL PHYS L, 79(8), 2001, pp. 1142-1144

Authors: Granata, C Corato, V Monaco, A Ruggiero, B Russo, M Silvestrini, P
Citation: C. Granata et al., Stacked Josephson junctions in view of macroscopic quantum experiments, APPL PHYS L, 79(8), 2001, pp. 1145-1147

Authors: Wang, WH Wu, GH Chen, JL Gao, SX Zhan, WS Wen, GH Zhang, XX
Citation: Wh. Wang et al., Intermartensitic transformation and magnetic-field-induced strain in Ni52Mn24.5Ga23.5 single crystals, APPL PHYS L, 79(8), 2001, pp. 1148-1150

Authors: Hellwig, O Weller, D Kellock, AJ Baglin, JEE Fullerton, EE
Citation: O. Hellwig et al., Magnetic patterning of chemically-ordered CrPt3 films, APPL PHYS L, 79(8), 2001, pp. 1151-1153

Authors: Zhao, Y Feng, Y Cheng, CH Zhou, L Wu, Y Machi, T Fudamoto, Y Koshizuka, N Murakami, M
Citation: Y. Zhao et al., High critical current density of MgB2 bulk superconductor doped with Ti and sintered at ambient pressure, APPL PHYS L, 79(8), 2001, pp. 1154-1156

Authors: Sato, R Mizushima, K
Citation: R. Sato et K. Mizushima, Spin-valve transistor with an Fe/Au/Fe(001) base, APPL PHYS L, 79(8), 2001, pp. 1157-1159

Authors: Yoon, KS Park, JH Choi, JH Yang, JY Lee, CH Kim, CO Hong, JP Kang, TW
Citation: Ks. Yoon et al., Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method, APPL PHYS L, 79(8), 2001, pp. 1160-1162

Authors: Moorti, A Sailaja, S Naik, PA Gupta, PD Korobkin, YV Romanov, IV Rupasov, AA Shikhanov, AS
Citation: A. Moorti et al., Laser-driven high-current-density pulsed electron emission from lead zirconium titanate ferroelectric ceramic, APPL PHYS L, 79(8), 2001, pp. 1163-1165

Authors: Flores, JLP Castaneda-Guzman, R Villagran-Muniz, M Huanosta-Tera, A
Citation: Jlp. Flores et al., Ferroparaelectric transitions in relaxor materials studied by a photoacoustic technique, APPL PHYS L, 79(8), 2001, pp. 1166-1168

Authors: Hirayama, H Kawamoto, Y Ohshima, Y Takayanagi, K
Citation: H. Hirayama et al., Nanospot welding of carbon nanotubes, APPL PHYS L, 79(8), 2001, pp. 1169-1171

Authors: Wei, BQ Vajtai, R Ajayan, PM
Citation: Bq. Wei et al., Reliability and current carrying capacity of carbon nanotubes, APPL PHYS L, 79(8), 2001, pp. 1172-1174

Authors: Baron, T Gentile, P Magnea, N Mur, P
Citation: T. Baron et al., Single-electron charging effect in individual Si nanocrystals, APPL PHYS L, 79(8), 2001, pp. 1175-1177

Authors: Merkulov, VI Guillorn, MA Lowndes, DH Simpson, ML Voelkl, E
Citation: Vi. Merkulov et al., Shaping carbon nanostructures by controlling the synthesis process, APPL PHYS L, 79(8), 2001, pp. 1178-1180

Authors: Maeda, Y Tabata, H Kawai, T
Citation: Y. Maeda et al., Two-dimensional assembly of gold nanoparticles with a DNA network template, APPL PHYS L, 79(8), 2001, pp. 1181-1183

Authors: Kawazoe, T Yamamoto, Y Ohtsu, M
Citation: T. Kawazoe et al., Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition, APPL PHYS L, 79(8), 2001, pp. 1184-1186

Authors: Kim, C Kim, B Lee, SM Jo, C Lee, YH
Citation: C. Kim et al., Effect of electric field on the electronic structures of carbon nanotubes, APPL PHYS L, 79(8), 2001, pp. 1187-1189

Authors: Hanbicki, AT Magno, R Cheng, SF Park, YD Bracker, AS Jonker, BT
Citation: At. Hanbicki et al., Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode-giant magnetoresistance circuits, APPL PHYS L, 79(8), 2001, pp. 1190-1192
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