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Table of contents of journal: *Applied physics letters

Results: 1-25/21738

Authors: Springholz, G Schwarzl, T Heiss, W Bauer, G Aigle, M Pascher, H Vavra, I
Citation: G. Springholz et al., Midinfrared surface-emitting PbSe/PbEuTe quantum-dot lasers, APPL PHYS L, 79(9), 2001, pp. 1225-1227

Authors: Kawamura, K Sarukura, N Hirano, M Ito, N Hosono, H
Citation: K. Kawamura et al., Periodic nanostructure array in crossed holographic gratings on silica glass by two interfered infrared-femtosecond laser pulses, APPL PHYS L, 79(9), 2001, pp. 1228-1230

Authors: Okumoto, K Shirota, Y
Citation: K. Okumoto et Y. Shirota, Development of high-performance blue-violet-emitting organic electroluminescent devices, APPL PHYS L, 79(9), 2001, pp. 1231-1233

Authors: Oishi, Y Nayuki, T Nemoto, K Okano, Y Hironaka, Y Nakamura, KG Kondo, K
Citation: Y. Oishi et al., Production of relativistic electrons by irradiation of 43-fs-laser pulses on copper film, APPL PHYS L, 79(9), 2001, pp. 1234-1236

Authors: Baker, KL Hwang, DQ Evans, RW Horton, RD McLean, HS Terry, SD
Citation: Kl. Baker et al., Observation of pinching in the compact toroid injection experiment: Implications for a plasma opening switch, APPL PHYS L, 79(9), 2001, pp. 1237-1239

Authors: Moselhy, M Shi, W Stark, RH Schoenbach, KH
Citation: M. Moselhy et al., Xenon excimer emission from pulsed microhollow cathode discharges, APPL PHYS L, 79(9), 2001, pp. 1240-1242

Authors: Husberg, O Khartchenko, A As, DJ Vogelsang, H Frey, T Schikora, D Lischka, K Noriega, OC Tabata, A Leite, JR
Citation: O. Husberg et al., Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures, APPL PHYS L, 79(9), 2001, pp. 1243-1245

Authors: Dubourdieu, C Rosina, M Roussel, H Weiss, F Senateur, JP Hodeau, JL
Citation: C. Dubourdieu et al., Pulsed liquid-injection metalorganic chemical vapor deposition of (La0.7Sr0.3MnO3/SrTiO3)(15) superlattices, APPL PHYS L, 79(9), 2001, pp. 1246-1248

Authors: Khriachtchev, L Rasanen, M Novikov, S Sinkkonen, J
Citation: L. Khriachtchev et al., Optical gain in Si/SiO2 lattice: Experimental evidence with nanosecond pulses, APPL PHYS L, 79(9), 2001, pp. 1249-1251

Authors: Cao, AY Zhang, XF Xu, CL Liang, J Wu, DH Chen, XH Wei, BQ Ajayan, PM
Citation: Ay. Cao et al., Grapevine-like growth of single walled carbon nanotubes among vertically aligned multiwalled nanotube arrays, APPL PHYS L, 79(9), 2001, pp. 1252-1254

Authors: Karanasos, V Panagiotopoulos, I Niarchos, D Okumura, H Hadjipanayis, GC
Citation: V. Karanasos et al., CoPt/Ag nanocomposites with (001) texture, APPL PHYS L, 79(9), 2001, pp. 1255-1257

Authors: Liao, XZ Zou, J Cockayne, DJH Wan, J Jiang, ZM Jin, G Wang, KL
Citation: Xz. Liao et al., Annealing effects on the microstructure of Ge/Si(001) quantum dots, APPL PHYS L, 79(9), 2001, pp. 1258-1260

Authors: Akasaka, T Ando, S Nishida, T Saito, H Kobayashi, N
Citation: T. Akasaka et al., Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates, APPL PHYS L, 79(9), 2001, pp. 1261-1263

Authors: Sekiguchi, A Koike, J Kamiya, S Saka, M Maruyama, K
Citation: A. Sekiguchi et al., Void formation by thermal stress concentration at twin interfaces in Cu thin films, APPL PHYS L, 79(9), 2001, pp. 1264-1266

Authors: Chen, YF Weng, JG Lukes, JR Majumdar, A Tien, CL
Citation: Yf. Chen et al., Molecular dynamics simulation of the meniscus formation between two surfaces, APPL PHYS L, 79(9), 2001, pp. 1267-1269

Authors: Ardila, AM Martinez, O Avella, M Jimenez, J Gerard, B Napierala, J Gil-Lafon, E
Citation: Am. Ardila et al., Self-doping near the seed/layer interface in conformal GaAs layers grown on Si, APPL PHYS L, 79(9), 2001, pp. 1270-1272

Authors: Venezia, VC Pelaz, L Gossmann, HJL Haynes, TE Rafferty, CS
Citation: Vc. Venezia et al., Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon, APPL PHYS L, 79(9), 2001, pp. 1273-1275

Authors: Zeng, HP Lin, FC Mao, S Xu, ZZ
Citation: Hp. Zeng et al., Conductive phosphate and fluorophosphate glasses with fullerene doping, APPL PHYS L, 79(9), 2001, pp. 1276-1278

Authors: Tomita, T Saito, S Suemoto, T Harima, H Nakashima, S
Citation: T. Tomita et al., Inter-conduction band electron relaxation dynamics in 6H-SiC, APPL PHYS L, 79(9), 2001, pp. 1279-1281

Authors: Makino, T Yasuda, T Segawa, Y Ohtomo, A Tamura, K Kawasaki, M Koinuma, H
Citation: T. Makino et al., Strain effects on exciton resonance energies of ZnO epitaxial layers, APPL PHYS L, 79(9), 2001, pp. 1282-1284

Authors: Shen, WZ
Citation: Wz. Shen, Study of exciton-longitudinal optical phonon coupling in quantum wells foroptoelectronic applications, APPL PHYS L, 79(9), 2001, pp. 1285-1287

Authors: Koenigsfeld, N Kalish, R Cimmino, A Hoxley, D Prawer, S Yamada, I
Citation: N. Koenigsfeld et al., Effect of surface roughness on field emission from chemical vapor deposited polycrystalline diamond, APPL PHYS L, 79(9), 2001, pp. 1288-1290

Authors: Jepsen, PU Schairer, W Libon, IH Lemmer, U Hecker, NE Birkholz, M Lips, K Schall, M
Citation: Pu. Jepsen et al., Ultrafast carrier trapping in microcrystalline silicon observed in opticalpump-terahertz probe measurements, APPL PHYS L, 79(9), 2001, pp. 1291-1293

Authors: Chaldyshev, VV Bert, NA Musikhin, YG Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P Gosele, U
Citation: Vv. Chaldyshev et al., Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs, APPL PHYS L, 79(9), 2001, pp. 1294-1296

Authors: Seong, MJ Mascarenhas, A Geisz, JF
Citation: Mj. Seong et al., Gamma-L-X mixed symmetry of nitrogen-induced states in GaAs1-xNx probed byresonant Raman scattering, APPL PHYS L, 79(9), 2001, pp. 1297-1299
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