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Authors: Martinu, L Poltras, D
Citation: L. Martinu et D. Poltras, Plasma deposition of optical films and coatings: A review, J VAC SCI A, 18(6), 2000, pp. 2619-2645

Authors: Coutts, TJ Young, DL Li, X Mulligan, WP Wu, X
Citation: Tj. Coutts et al., Search for improved transparent conducting oxides: A fundamental investigation of CdO, Cd2SnO4, and Zn2SnO4, J VAC SCI A, 18(6), 2000, pp. 2646-2660

Authors: Zhang, D Kushner, MJ
Citation: D. Zhang et Mj. Kushner, Mechanisms for CF2 radical generation and loss on surfaces in fluorocarbonplasmas, J VAC SCI A, 18(6), 2000, pp. 2661-2668

Authors: Choe, JY Fuller, NCM Donnelly, VM Herman, IP
Citation: Jy. Choe et al., Transient plasma-induced emission analysis of laser-desorbed species during Cl-2 plasma etching of Si, J VAC SCI A, 18(6), 2000, pp. 2669-2679

Authors: Singh, H Coburn, JW Graves, DB
Citation: H. Singh et al., Surface loss coefficients of CFx and F radicals on stainless steel, J VAC SCI A, 18(6), 2000, pp. 2680-2684

Authors: Butoi, CI Mackie, NM Williams, KL Capps, NE Fisher, ER
Citation: Ci. Butoi et al., Ion and substrate effects on surface reactions of CF2 using C2F6, C2F6/H-2, and hexafluoropropylene oxide plasmas, J VAC SCI A, 18(6), 2000, pp. 2685-2698

Authors: Kondoleon, CA Rack, P Lambers, E Holloway, P
Citation: Ca. Kondoleon et al., Carbon deposition by electron beam cracking of hydrocarbons on Ta2Zn3O8 thin film phosphors, J VAC SCI A, 18(6), 2000, pp. 2699-2705

Authors: Uchitani, T Maki, K
Citation: T. Uchitani et K. Maki, Change in surface roughness with the thickness of TiO2 film grown on MgO(001) by Ar-ion beam sputtering, J VAC SCI A, 18(6), 2000, pp. 2706-2708

Authors: Pelleg, J Rubinovich, L
Citation: J. Pelleg et L. Rubinovich, A conductance model (approach) for kinetic studies: The Ti-Ta-Si system, J VAC SCI A, 18(6), 2000, pp. 2709-2714

Authors: Hovorka, D Vlcek, J Cerstvy, R Musil, J Belsky, P Ruzicka, M Han, JG
Citation: D. Hovorka et al., Microwave plasma nitriding of a low-alloy steel, J VAC SCI A, 18(6), 2000, pp. 2715-2721

Authors: Park, CD Lee, TY Bae, IH Chung, SM
Citation: Cd. Park et al., Measurement of beam-gas scattering lifetime in Pohang light source, J VAC SCI A, 18(6), 2000, pp. 2722-2727

Authors: Vallee, C Rhallabi, A Granier, A Goullet, A Turban, G
Citation: C. Vallee et al., Estimation of the TEOS dissociation coefficient by electron impact, J VAC SCI A, 18(6), 2000, pp. 2728-2732

Authors: Miola, EJ de Souza, SD Nascente, PAP Olzon-Dionysio, M Olivieri, CA Spinelli, D
Citation: Ej. Miola et al., Studies on plasma-nitrided iron by scanning electron microscopy, glancing angle x-ray diffraction, and x-ray photoelectron spectroscopy, J VAC SCI A, 18(6), 2000, pp. 2733-2737

Authors: Pelletier, S Ehret, E Gautier, B Palmino, F Labrune, JC
Citation: S. Pelletier et al., Scanning tunneling microscopy study of the Er/Ge(111) c(2X8) interface, J VAC SCI A, 18(6), 2000, pp. 2738-2741

Authors: Standaert, TEFM Joseph, EA Oehrlein, GS Jain, A Gill, WN Wayner, PC Plawsky, JL
Citation: Tefm. Standaert et al., Etching of xerogel in high-density fluorocarbon plasmas, J VAC SCI A, 18(6), 2000, pp. 2742-2748

Authors: Pruette, L Karecki, S Chatterjee, R Reif, R Sparks, T Vartanian, V
Citation: L. Pruette et al., High density plasma oxide etching using nitrogen trifluoride and acetylene, J VAC SCI A, 18(6), 2000, pp. 2749-2758

Authors: Sebel, PGM Hermans, LJF Beijerinck, HCW
Citation: Pgm. Sebel et al., Reaction layer dynamics in ion-assisted Si/XeF2 etching: Temperature dependence, J VAC SCI A, 18(6), 2000, pp. 2759-2769

Authors: Vitale, SA Chae, H Sawin, HH
Citation: Sa. Vitale et al., Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in F-2+O-2 and Cl-2+O-2 high density plasmas, J VAC SCI A, 18(6), 2000, pp. 2770-2778

Authors: Teii, K Hori, M Goto, T
Citation: K. Teii et al., Codeposition on diamond film surface during reactive ion etching in SF6 and O-2 plasmas, J VAC SCI A, 18(6), 2000, pp. 2779-2784

Authors: Goyette, AN Wang, YC Misakian, M Olthoff, JK
Citation: An. Goyette et al., Ion fluxes and energies in inductively coupled radio-frequency discharges containing C2F6 and c-C4F8, J VAC SCI A, 18(6), 2000, pp. 2785-2790

Authors: Cho, BO Hwang, SW Lee, GR Moon, SH
Citation: Bo. Cho et al., Angular dependence of SiO2 etching in a fluorocarbon plasma, J VAC SCI A, 18(6), 2000, pp. 2791-2798

Authors: Tu, VJ Jeong, JY Schutze, A Babayan, SE Ding, G Selwyn, GS Hicks, RF
Citation: Vj. Tu et al., Tantalum etching with a nonthermal atmospheric-pressure plasma, J VAC SCI A, 18(6), 2000, pp. 2799-2805

Authors: Berry, L Maynard, H Miller, P Moore, T Pendley, M Resta, V Sparks, D Yang, QY
Citation: L. Berry et al., Control of the radio-frequency wave form at the chuck of an industrial oxide-each reactor, J VAC SCI A, 18(6), 2000, pp. 2806-2814

Authors: Okumura, T Matsui, T Suzuki, H Sakiyama, K
Citation: T. Okumura et al., New very high frequency plasma source using a TM01-mode patch antenna withshort pins, J VAC SCI A, 18(6), 2000, pp. 2815-2821

Authors: Yun, JY Rhee, SW Park, S Lee, JG
Citation: Jy. Yun et al., Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium, J VAC SCI A, 18(6), 2000, pp. 2822-2826
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