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Results: 1-25/572

Authors: Zhao, JG Yasuda, H
Citation: Jg. Zhao et H. Yasuda, Cathodic plasma polymerization and treatment by anode magnetron torch: II.The influence of operating parameters on the argon sputtering rate distribution, J VAC SCI A, 17(6), 1999, pp. 3157-3165

Authors: Pankov, V Alonso, JC Ortiz, A
Citation: V. Pankov et al., Moisture stability and structure relaxation processes in plasma-deposited SiOF films, J VAC SCI A, 17(6), 1999, pp. 3166-3171

Authors: Hebner, GA Blain, MG Hamilton, TW Nichols, CA Jarecki, RL
Citation: Ga. Hebner et al., Surface dependent electron and negative ion density in inductively coupleddischarges, J VAC SCI A, 17(6), 1999, pp. 3172-3178

Authors: Kastenmeier, BEE Matsuo, PJ Oehrlein, GS
Citation: Bee. Kastenmeier et al., Highly selective etching of silicon nitride over silicon and silicon dioxide, J VAC SCI A, 17(6), 1999, pp. 3179-3184

Authors: Niimi, H Lucovsky, G
Citation: H. Niimi et G. Lucovsky, Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfacesusing remote plasma processing, J VAC SCI A, 17(6), 1999, pp. 3185-3196

Authors: Miyazaki, K Kajiwara, T Uchino, K Muraoka, K Okada, T Maeda, M
Citation: K. Miyazaki et al., Atomic hydrogen temperature in silane plasmas used for the deposition of a-Si : H films, J VAC SCI A, 17(6), 1999, pp. 3197-3201

Authors: Mukherjee, C Anandan, C Seth, T Dixit, PN Bhattacharyya, R
Citation: C. Mukherjee et al., Properties of a-Si : H films deposited from silane diluted with hydrogen and helium using modified pulse plasma technique, J VAC SCI A, 17(6), 1999, pp. 3202-3208

Authors: Woodworth, JR Blain, MG Jarecki, RL Hamilton, TW Aragon, BP
Citation: Jr. Woodworth et al., Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge, J VAC SCI A, 17(6), 1999, pp. 3209-3217

Authors: Hebner, GA Blain, MG Hamilton, TW
Citation: Ga. Hebner et al., Influence of surface material on the boron chloride density in inductivelycoupled discharges, J VAC SCI A, 17(6), 1999, pp. 3218-3224

Authors: Furuse, M Watanabe, S Tamura, H Fukumasa, O
Citation: M. Furuse et al., Production of highly uniform electron cyclotron resonance plasmas by distribution control of the microwave electric field, J VAC SCI A, 17(6), 1999, pp. 3225-3229

Authors: Shin, JH Kim, MJ
Citation: Jh. Shin et Mj. Kim, Deposition and 1.54 mu m Er3+ luminescent properties of erbium-doped hydrogenated amorphous silicon thin films by electron cyclotron resonance plasmaenhanced chemical vapor deposition of SiH4 with concurrent sputtering of erbium, J VAC SCI A, 17(6), 1999, pp. 3230-3234

Authors: Luo, EZ Sundaravel, B Guo, HY Wilson, IH Four, S Devine, RAB
Citation: Ez. Luo et al., Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide (Ta2O5) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF5) source, J VAC SCI A, 17(6), 1999, pp. 3235-3239

Authors: Kim, HY Choi, JB Lee, JY
Citation: Hy. Kim et al., Effects of silicon-hydrogen bond characteristics on the crystallization ofhydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition, J VAC SCI A, 17(6), 1999, pp. 3240-3245

Authors: Garnier, Y Viel, V Roussel, JF Bernard, J
Citation: Y. Garnier et al., Low-energy xenon ion sputtering of ceramics investigated for stationary plasma thrusters, J VAC SCI A, 17(6), 1999, pp. 3246-3254

Authors: Tian, XB Zhang, T Zeng, ZM Tang, BY Chu, PK
Citation: Xb. Tian et al., Dynamic mixing deposition/implantation in a plasma immersion configuration, J VAC SCI A, 17(6), 1999, pp. 3255-3259

Authors: Fujita, K Ito, M Hori, M Goto, T
Citation: K. Fujita et al., Silicon oxide selective etching process keeping harmony with environment by using radical injection technique, J VAC SCI A, 17(6), 1999, pp. 3260-3264

Authors: Agraharam, S Hess, DW Kohl, PA Allen, SAB
Citation: S. Agraharam et al., Plasma chemistry in fluorocarbon film deposition from pentafluoroethane/argon mixtures, J VAC SCI A, 17(6), 1999, pp. 3265-3271

Authors: Schaepkens, M Rueger, NR Beulens, JJ Li, X Standaert, TEFM Matsuo, PJ Oehrlein, GS
Citation: M. Schaepkens et al., Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing, J VAC SCI A, 17(6), 1999, pp. 3272-3280

Authors: Sobolewski, MA Steffens, KL
Citation: Ma. Sobolewski et Kl. Steffens, Electrical control of the spatial uniformity of reactive species in plasmas, J VAC SCI A, 17(6), 1999, pp. 3281-3292

Authors: Vyvoda, MA Li, M Graves, DB
Citation: Ma. Vyvoda et al., Hardmask charging during Cl-2 plasma etching of silicon, J VAC SCI A, 17(6), 1999, pp. 3293-3307

Authors: Wang, Y Jiang, EY Bai, HL Wu, P
Citation: Y. Wang et al., Study of CN films synthesized by facing target sputtering, J VAC SCI A, 17(6), 1999, pp. 3308-3311

Authors: Kimura, S Honda, T Fukushi, D
Citation: S. Kimura et al., Fine control of deposition film compositions using radio-frequency reactive sputtering with periodic gas additions, J VAC SCI A, 17(6), 1999, pp. 3312-3316

Authors: Vancoppenolle, V Jouan, PY Wautelet, M Dauchot, JP Hecq, M
Citation: V. Vancoppenolle et al., Glow discharge mass spectrometry study of the deposition of TiO2 thin films by direct current reactive magnetron sputtering of a Ti target, J VAC SCI A, 17(6), 1999, pp. 3317-3321

Authors: Barnat, E Lu, TM
Citation: E. Barnat et Tm. Lu, Pulsed bias magnetron sputtering of thin films on insulators, J VAC SCI A, 17(6), 1999, pp. 3322-3326

Authors: Wuu, DS Chan, CC Horng, RH
Citation: Ds. Wuu et al., Material characteristics and thermal stability of cosputtered Ta-Ru thin films, J VAC SCI A, 17(6), 1999, pp. 3327-3332
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