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Results: 1-25/593

Authors: OKIMURA K MAEDA N
Citation: K. Okimura et N. Maeda, DISSOCIATION PROCESSES IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2-FILMS USING TETRAETHOXYSILANE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3157-3163

Authors: VINOGRADOV GK MENAGARISHVILI VM YONEYAMA S
Citation: Gk. Vinogradov et al., CHARACTERIZATION OF A NOVEL LAMBDA BALANCED INDUCTIVE PLASMA SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3164-3169

Authors: NODA H NAGAI H SHIMAKURA M HIRAMATSU M NAWATA M
Citation: H. Noda et al., SYNTHESIS OF DIAMOND USING A LOW-PRESSURE, RADIO-FREQUENCY, INDUCTIVELY-COUPLED PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3170-3174

Authors: BOGART KHA RAMIREZ SK GONZALES LA BOGART GR FISHER ER
Citation: Kha. Bogart et al., DEPOSITION OF SIO2-FILMS FROM NOVEL ALKOXYSILANE O-2 PLASMAS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3175-3184

Authors: ASAKURA Y CHATTOPADHYAY KK MATSUMOTO S HIRAKURI K
Citation: Y. Asakura et al., DIAMOND SYNTHESIS IN CAPACITIVELY COUPLED 13.56 MHZ RADIO-FREQUENCY PLASMA USING PARALLEL-PLATE ELECTRODES WITH THE ADDITION OF DIRECT-CURRENT POWER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3185-3189

Authors: SOBRINHO ASD LATRECHE M CZEREMUSZKIN G KLEMBERGSAPIEHA JE WERTHEIMER MR
Citation: Asd. Sobrinho et al., TRANSPARENT BARRIER COATINGS ON POLYETHYLENE TEREPHTHALATE BY SINGLE-FREQUENCY AND DUAL-FREQUENCY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3190-3198

Authors: MARRA DC EDELBERG EA NAONE RL AYDIL ES
Citation: Dc. Marra et al., SILICON HYDRIDE COMPOSITION OF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS AND NANOCRYSTALLINE SILICON FILMS AND SURFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3199-3210

Authors: ALONSO JC VAZQUEZ R ORTIZ A PANKOV V ANDRADE E
Citation: Jc. Alonso et al., EFFECT OF HYDROGEN DILUTION ON THE REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF CHLORINATED SIO2-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3211-3217

Authors: PLATZ R WAGNER S
Citation: R. Platz et S. Wagner, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF INTRINSIC MICROCRYSTALLINE SILICON FROM CHLORINE-CONTAINING SOURCE GAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3218-3222

Authors: BASA C HU YZ TINANI M IRENE EA
Citation: C. Basa et al., EFFECTS OF ION PRETREATMENTS ON THE NUCLEATION OF SILICON ON SILICON DIOXIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3223-3226

Authors: BERGERON A KLEMBERGSAPIEHA JE MARTINU L
Citation: A. Bergeron et al., STRUCTURE OF THE INTERFACIAL REGION BETWEEN POLYCARBONATE AND PLASMA-DEPOSITED SIN1.3 AND SIO2 OPTICAL COATINGS STUDIED BY ELLIPSOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3227-3234

Authors: WOODWORTH JR NICHOLS CA HAMILTON TW
Citation: Jr. Woodworth et al., POSITIVE-ION SPECIES IN HIGH-DENSITY DISCHARGES CONTAINING CHLORINE AND BORON-TRICHLORIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3235-3239

Authors: MILLER PA HEBNER GA JARECKI RL NI T
Citation: Pa. Miller et al., OPTICAL SELF-ABSORPTION TECHNIQUE FOR QUALITATIVE MEASUREMENT OF EXCITED-STATE DENSITIES IN PLASMA REACTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3240-3246

Authors: VYVODA MA LEE H MALYSHEV MV KLEMENS FP CERULLO M DONNELLY VM GRAVES DB KORNBLIT A LEE JTC
Citation: Ma. Vyvoda et al., EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3247-3258

Authors: NIGG HL MASEL RI
Citation: Hl. Nigg et Ri. Masel, SURFACE-REACTION MECHANISMS OF TRIFLUORACETYLACETONE ON CLEAN AND PRE-OXIDIZED NI(110) - AN EXAMPLE WHERE ETCHING CHEMISTRY DOES NOT FOLLOWVOLATILITY TRENDS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3259-3265

Authors: CHOE JY HERMAN IP DONNELLY VM
Citation: Jy. Choe et al., LASER-INDUCED THERMAL-DESORPTION ANALYSIS OF THE SURFACE DURING GE ETCHING IN A CL-2 INDUCTIVELY-COUPLED PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3266-3273

Authors: HOEKSTRA RJ KUSHNER MJ
Citation: Rj. Hoekstra et Mj. Kushner, COMPARISON OF 2-DIMENSIONAL AND 3-DIMENSIONAL MODELS FOR PROFILE SIMULATION OF POLY-SI ETCHING OF FINITE-LENGTH TRENCHES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3274-3280

Authors: SCHAEPKENS M OEHRLEIN GS HEDLUND C JONSSON LB BLOM HO
Citation: M. Schaepkens et al., SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3281-3286

Authors: SUEDA M KOBAYASHI T ROKKAKU T OGAWA M WATANABE T MORIMOTO S
Citation: M. Sueda et al., HIGH-RATE DEPOSITION OF CBN FILMS BY ION-BEAM-ASSISTED VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3287-3294

Authors: DISHNER MH IVEY MM GORER S HEMMINGER JC FEHER FJ
Citation: Mh. Dishner et al., PREPARATION OF GOLD THIN-FILMS BY EPITAXIAL-GROWTH ON MICA AND THE EFFECT OF FLAME ANNEALING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3295-3300

Authors: MUSIL J REGENT F
Citation: J. Musil et F. Regent, FORMATION OF NANOCRYSTALLINE NICR-N FILMS BY REACTIVE DC MAGNETRON SPUTTERING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3301-3304

Authors: ARAIZA JJ CARDENAS M FALCONY C MENDEZGARCIA VH LOPEZ M CONTRERASPUENTE G
Citation: Jj. Araiza et al., STRUCTURAL, OPTICAL AND ELECTRICAL CHARACTERISTICS OF YTTRIUM-OXIDE FILMS DEPOSITED BY LASER-ABLATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3305-3310

Authors: CHOI WK CHOI SC JUNG HJ KOH SK BYUN DJ KUM DW
Citation: Wk. Choi et al., SURFACE MODIFICATION OF ALPHA-AL2O3(0001) BY N-2(+) ION IRRADIATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3311-3313

Authors: STOUT PJ
Citation: Pj. Stout, MODELING SURFACE KINETICS AND MORPHOLOGY DURING 3C, 2H, 4H, AND 6H-SIC(111) STEP-FLOW GROWTH, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3314-3327

Authors: JUNKER KH WHITE JM
Citation: Kh. Junker et Jm. White, THERMAL AND ELECTRON DRIVEN CHEMISTRY OF CCL4 ON OXIDIZED SI(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3328-3334
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