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Authors: TAKAHASHI KM DAUGHERTY JE
Citation: Km. Takahashi et Je. Daugherty, CURRENT CAPABILITIES AND LIMITATIONS OF IN-SITU PARTICLE MONITORS IN SILICON PROCESSING EQUIPMENT, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 2983-2993

Authors: BAZYLENKO MV GROSS M
Citation: Mv. Bazylenko et M. Gross, REACTIVE ION ETCHING OF SILICA STRUCTURES FOR INTEGRATED-OPTICS APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 2994-3003

Authors: SAMUKAWA S OHTAKE H TSUKADA T
Citation: S. Samukawa et al., EFFECT OF SUPPLIED SUBSTRATE BIAS FREQUENCY IN ULTRAHIGH-FREQUENCY PLASMA DISCHARGE FOR PRECISE ETCHING PROCESSES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3004-3009

Authors: MAGUIRE P MOLLOY J LAVERTY SJ MCLAUGHLIN J
Citation: P. Maguire et al., ETCHING CHARACTERISTICS OF TIN OXIDE THIN-FILMS IN ARGON-CHLORINE RADIO-FREQUENCY PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3010-3016

Authors: HATTANGADY SV NIIMI H LUCOVSKY G
Citation: Sv. Hattangady et al., INTEGRATED PROCESSING OF SILICON OXYNITRIDE FILMS BY COMBINED PLASMA AND RAPID-THERMAL PROCESSING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3017-3023

Authors: HABERMEHL S LUCOVSKY G
Citation: S. Habermehl et G. Lucovsky, ION-SURFACE INTERACTIONS IN LOW-TEMPERATURE SILICON EPITAXY BY REMOTEPLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3024-3032

Authors: BARANKOVA H BARDOS L BERG S
Citation: H. Barankova et al., THE RADIO-FREQUENCY HOLLOW-CATHODE PLASMA-JET ARC FOR THE FILM DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3033-3038

Authors: KIMURA T OKAZAKI Y
Citation: T. Kimura et Y. Okazaki, GENERATION OF AN ELECTRON-CYCLOTRON-RESONANCE PLASMA USING COAXIAL-TYPE OPEN-ENDED DIELECTRIC CAVITY WITH PERMANENT-MAGNETS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3039-3042

Authors: GRONING P SCHNEUWLY A SCHLAPBACH L GALE MT
Citation: P. Groning et al., SELF-THICKNESS-LIMITED PLASMA POLYMERIZATION OF AN ULTRATHIN ANTIADHESIVE FILM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3043-3048

Authors: SAMUKAWA S OHTAKE H MIENO T
Citation: S. Samukawa et al., PULSE-TIME-MODULATED ELECTRON-CYCLOTRON-RESONANCE PLASMA DISCHARGE FOR HIGHLY SELECTIVE, HIGHLY ANISOTROPIC, AND CHARGE-FREE ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3049-3058

Authors: YIN Y MCKENZIE DR
Citation: Y. Yin et Dr. Mckenzie, ELECTRIC-FIELD CONTROL OF PLASMA AND MACROPARTICLES IN CATHODIC ARC DEPOSITION AS A PRACTICAL ALTERNATIVE TO MAGNETIC-FIELDS IN DUCTS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3059-3064

Authors: WERNER F KORZEC D ENGEMANN J
Citation: F. Werner et al., SURFACE-WAVE OPERATION MODE OF THE SLOT ANTENNA MICROWAVE PLASMA SOURCE SLAN, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3065-3070

Authors: SUN M YANG SZ CHEN XC
Citation: M. Sun et al., MEASUREMENTS OF SPATIAL AND TEMPORAL SHEATH EVOLUTION INSIDE TUBULAR MATERIAL FOR INNER SURFACE ION-IMPLANTATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3071-3074

Authors: SYNOWICKI RA HALE JS MCGAHAN WA IANNO NJ WOOLLAM JA
Citation: Ra. Synowicki et al., OXYGEN PLASMA ASHER CONTAMINATION - AN ANALYSIS OF SOURCES AND REMEDIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3075-3081

Authors: MIYAJI S KATO T YAMAUCHI T
Citation: S. Miyaji et al., ASHING RESIDUES ON TIN ANTIREFLECTIVE COATING LAYERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3082-3086

Authors: TABARES FL TAFALLA D
Citation: Fl. Tabares et D. Tafalla, SPUTTERING OF METALLIC WALLS IN AR H-2 DIRECT-CURRENT GLOW-DISCHARGESAT ROOM-TEMPERATURE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3087-3091

Authors: WANG DY NAGAHATA Y MASUDA M HAYASHI Y
Citation: Dy. Wang et al., EFFECT OF NONSTOICHIOMETRY UPON OPTICAL-PROPERTIES OF RADIO-FREQUENCYSPUTTERED AL-N THIN-FILMS FORMED AT VARIOUS SPUTTERING PRESSURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3092-3099

Authors: JOHANSSON MP IVANOV I HULTMAN L MUNGER EP SCHUTZE A
Citation: Mp. Johansson et al., LOW-TEMPERATURE DEPOSITION OF CUBIC BN-C FILMS BY UNBALANCED DIRECT-CURRENT MAGNETRON SPUTTERING OF A B4C TARGET, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3100-3107

Authors: SERIKOV VV NANBU K
Citation: Vv. Serikov et K. Nanbu, MONTE-CARLO NUMERICAL-ANALYSIS OF TARGET EROSION AND FILM GROWTH IN A3-DIMENSIONAL SPUTTERING CHAMBER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3108-3123

Authors: CHU X BARNETT SA WONG MS SPROUL WD
Citation: X. Chu et al., REACTIVE MAGNETRON SPUTTER-DEPOSITION OF POLYCRYSTALLINE VANADIUM NITRIDE FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3124-3129

Authors: KEROACK D TERREAULT B
Citation: D. Keroack et B. Terreault, LASER-DESORPTION STUDY OF DEUTERIUM IMPLANTED IN SILICON-CARBIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3130-3134

Authors: BRATINA G OZZELLO T FRANCIOSI A
Citation: G. Bratina et al., CHEMICAL BONDING AND ELECTRONIC-PROPERTIES OF SE-RICH ZNSE-GAAS(001) INTERFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3135-3143

Authors: HARTMANN J ENSINGER W KONIGER A STRITZKER B RAUSCHENBACH B
Citation: J. Hartmann et al., FORMATION OF TITANIUM NITRIDE COATINGS BY NITROGEN PLASMA IMMERSION ION-IMPLANTATION OF EVAPORATED TITANIUM FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3144-3146

Authors: KAJIOKA H HIGUCHI K KAWASHIMO Y
Citation: H. Kajioka et al., OPTICAL-EMISSION SPECTROSCOPY FROM ARC-LIKE TI VAPOR PLASMA AND EFFECTS OF SELF-ION BOMBARDMENT ON TI AND TIN FILM DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3147-3155

Authors: SIKOLA T ARMOUR DG VANDENBERG JA
Citation: T. Sikola et al., IN-SITU STUDY OF PROCESSES TAKING PLACE ON SILICON SURFACE DURING ITSBOMBARDMENT BY CFX AR IONS - ETCHING VERSUS POLYMERIZATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3156-3163
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