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Results: 76-100/4497

Authors: Phani, AR Krzanowski, JE Nainaparampil, JJ
Citation: Ar. Phani et al., Structural and mechanical properties of TiC and Ti-Si-C films deposited bypulsed laser deposition, J VAC SCI A, 19(5), 2001, pp. 2252-2258

Authors: Schuler, TM Ederer, DL Ruzycki, N Glass, G Hollerman, WA Moewes, A Kuhn, M Callcott, TA
Citation: Tm. Schuler et al., Diffusion of TiN into aluminum films measured by soft x-ray spectroscopy and Rutherford backscattering spectroscopy, J VAC SCI A, 19(5), 2001, pp. 2259-2266

Authors: Cosnier, V Olivier, M Theret, G Andre, B
Citation: V. Cosnier et al., HfO2-SiO2 interface in PVD coatings, J VAC SCI A, 19(5), 2001, pp. 2267-2271

Authors: Perry, WL Waters, K Barela, M Anderson, HM
Citation: Wl. Perry et al., Oxide etch behavior in a high-density, low-pressure, inductively coupled C2F6 plasma: Etch rates, selectivity to photoresist, plasma parameters, and CFx radical densities, J VAC SCI A, 19(5), 2001, pp. 2272-2281

Authors: Nishita, K Koma, A Saiki, K
Citation: K. Nishita et al., Growth of NiO films on various GaAs faces via electron bombardment evaporation, J VAC SCI A, 19(5), 2001, pp. 2282-2286

Authors: Nesterov, SB Vassiliev, YK Longsworth, RC
Citation: Sb. Nesterov et al., Affect on pumping-speed measurements due to variations of test dome designbased on Monte Carlo analysis, J VAC SCI A, 19(5), 2001, pp. 2287-2293

Authors: Ye, J Oechsner, H Westermeyr, S
Citation: J. Ye et al., Effect of substrate temperature and ion bombardment on the formation of cubic boron nitride films: A two-step deposition approach, J VAC SCI A, 19(5), 2001, pp. 2294-2300

Authors: Chu, PK Zeng, XC
Citation: Pk. Chu et Xc. Zeng, Hydrogen-induced surface blistering of sample chuck materials in hydrogen plasma immersion ion implantation, J VAC SCI A, 19(5), 2001, pp. 2301-2306

Authors: Jernigan, GG Thompson, PE
Citation: Gg. Jernigan et Pe. Thompson, Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800 degrees C on Si (100) by molecular beam epitaxy, J VAC SCI A, 19(5), 2001, pp. 2307-2311

Authors: Yan, PX Yu, HY Wu, ZG Xu, JW Wen, XL
Citation: Px. Yan et al., Deposited well-crystallized cubic boron nitride films by pulsed plasma enhanced chemical vapor deposition at room temperature, J VAC SCI A, 19(5), 2001, pp. 2312-2314

Authors: Martin-Palma, RJ Vazquez, L Martinez-Duart, JM
Citation: Rj. Martin-palma et al., Defect characterization of silver-based low-emissivity multilayer coatingsfor energy-saving applications, J VAC SCI A, 19(5), 2001, pp. 2315-2319

Authors: Dennler, G Houdayer, A Segui, Y Wertheimer, MR
Citation: G. Dennler et al., Growth and structure of hyperthin SiO2 coatings on polymers, J VAC SCI A, 19(5), 2001, pp. 2320-2327

Authors: Alpuim, P Chu, V Conde, JP
Citation: P. Alpuim et al., Doping of amorphous and microcrystalline silicon films deposited at low substrate temperatures by hot-wire chemical vapor deposition, J VAC SCI A, 19(5), 2001, pp. 2328-2334

Authors: Jang, S Lee, W
Citation: S. Jang et W. Lee, Pressure and input power dependence of Ar/N2H2 inductively coupled plasma systems, J VAC SCI A, 19(5), 2001, pp. 2335-2343

Authors: Ho, P Johannes, JE Buss, RJ Meeks, E
Citation: P. Ho et al., Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide,with comparisons to etch rate and diagnostic data, J VAC SCI A, 19(5), 2001, pp. 2344-2367

Authors: Malkomes, N Szyszka, B
Citation: N. Malkomes et B. Szyszka, Nonclassical impedance control of the high rate midfrequency reactive magnetron sputter process using harmonic analysis, J VAC SCI A, 19(5), 2001, pp. 2368-2372

Authors: Ohta, H Hamaguchi, S
Citation: H. Ohta et S. Hamaguchi, Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams, J VAC SCI A, 19(5), 2001, pp. 2373-2381

Authors: Ting, JM Chen, P
Citation: Jm. Ting et P. Chen, Dependence of compositions and crystallization behaviors of dc-sputtered TiNi thin films on the deposition conditions, J VAC SCI A, 19(5), 2001, pp. 2382-2387

Authors: Werner, WSM Smekal, W Stori, H Eisenmenger-Sittner, C
Citation: Wsm. Werner et al., Angular dependence of the surface excitation probability for medium energyelectrons backscattered from Al and Si surfaces, J VAC SCI A, 19(5), 2001, pp. 2388-2393

Authors: Scardi, P Dong, YH Tosi, C
Citation: P. Scardi et al., Co,Ni-base alloy thin films deposited by reactive radiol frequency magnetron sputtering, J VAC SCI A, 19(5), 2001, pp. 2394-2399

Authors: Chung, CW Chung, I
Citation: Cw. Chung et I. Chung, Etch characteristics of iridium in chlorine-containing and fluorine-containing gas plasmas, J VAC SCI A, 19(5), 2001, pp. 2400-2406

Authors: Diaz, R
Citation: R. Diaz, Dependence of energy gaps with the stoichiometric deviation in a CuIn0.5Ga0.5Se2 ingot: A schematic band model, J VAC SCI A, 19(5), 2001, pp. 2407-2413

Authors: Zou, W Wadley, HNG Zhou, XW Ghosal, S Kosut, R Brownell, D
Citation: W. Zou et al., Growth of giant magnetoresistance multilayers: Effects of processing conditions during radio-frequency diode deposition, J VAC SCI A, 19(5), 2001, pp. 2414-2424

Authors: Wang, SB Wendt, AE
Citation: Sb. Wang et Ae. Wendt, Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity, J VAC SCI A, 19(5), 2001, pp. 2425-2432

Authors: Yamauchi, T Aoki, K Kanoh, M Sugai, H
Citation: T. Yamauchi et al., Large-area plasma produced by surface waves on a metal wall with periodic grooves, J VAC SCI A, 19(5), 2001, pp. 2433-2440
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