Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 51-75/4497

Authors: Shimoyama, K Kubo, K Lida, M Yamabe, K Maeda, T
Citation: K. Shimoyama et al., Changes in surface states during epitaxial growth of BaTiO3 on SrTiO3 substrate in connection with composition deviation, J VAC SCI A, 19(5), 2001, pp. 2083-2088

Authors: Matsui, M Tatsumi, T Sekine, M
Citation: M. Matsui et al., Relationship of etch reaction and reactive species flux in C4F8/Ar/O-2 plasma for SiO2 selective etching over Si and Si3N4, J VAC SCI A, 19(5), 2001, pp. 2089-2096

Authors: Olvera, MD Maldonado, A Matsumoto, Y Asomoza, R Melendez-Lira, M Acosta, DR
Citation: Md. Olvera et al., Chromium doped ZnO thin films deposited by chemical spray: Chromium effect, J VAC SCI A, 19(5), 2001, pp. 2097-2101

Authors: Cheng, YH Tay, BK Lau, SP Shi, X Tan, HS
Citation: Yh. Cheng et al., Influence of substrate bias on the microstructure and internal stress in Cu films deposited by filtered cathodic vacuum arc, J VAC SCI A, 19(5), 2001, pp. 2102-2108

Authors: Stoffels, E Stoffels, WW Kroutilina, VM Wagner, HE Meichsner, J
Citation: E. Stoffels et al., Near-surface generation of negative ions in low-pressure discharges, J VAC SCI A, 19(5), 2001, pp. 2109-2115

Authors: Hanson, AL Thieberger, P Steske, DB Zajic, V Zhang, SY Ludewig, H
Citation: Al. Hanson et al., Electron emission from ion bombarded stainless-steel surfaces coated and noncoated with TiN and its relevance to the design of high intensity storagerings, J VAC SCI A, 19(5), 2001, pp. 2116-2121

Authors: Vargheese, KD Rao, GM
Citation: Kd. Vargheese et Gm. Rao, Electrical properties of silicon nitride films prepared by electron cyclotron resonance assisted sputter deposition, J VAC SCI A, 19(5), 2001, pp. 2122-2126

Authors: Kelly, MA Shek, ML Pianetta, P Gur, TM Beasley, MR
Citation: Ma. Kelly et al., In situ x-ray photoelectron spectroscopy for thin film synthesis monitoring, J VAC SCI A, 19(5), 2001, pp. 2127-2133

Authors: Nakamura, M Hori, M Goto, T Ito, M Ishii, N
Citation: M. Nakamura et al., Spatial distributions of the absolute CF and CF2 radical densities in high-density plasma employing low global warming potential fluorocarbon gases and precursors for film formation, J VAC SCI A, 19(5), 2001, pp. 2134-2141

Authors: Chang, YS Ting, JM
Citation: Ys. Chang et Jm. Ting, Characteristics of zinc oxide deposited on copper metallized Si substrates, J VAC SCI A, 19(5), 2001, pp. 2142-2148

Authors: Li, J Zhao, YP Wan, BN Gong, XZ Zhen, M Gu, XM Zhang, XD Luo, JR Wan, YX Xie, JK Li, CF Chen, JL Toi, K Noda, T Watari, T
Citation: J. Li et al., Radio frequency siliconization: An approach to the coating for the future large superconducting fusion devices, J VAC SCI A, 19(5), 2001, pp. 2149-2154

Authors: Kobayashi, T Sasama, T Wada, H Fujii, N
Citation: T. Kobayashi et al., Emission spectroscopic analysis of oxygen-plasma reaction on polymer surface: Effective polyacrylonitrile treatment by the plasma, J VAC SCI A, 19(5), 2001, pp. 2155-2162

Authors: Yu, QS Moffitt, CE Wieliczka, DM Yasuda, H
Citation: Qs. Yu et al., dc cathodic polymerization of trimethylsilane in a closed reactor system, J VAC SCI A, 19(5), 2001, pp. 2163-2167

Authors: Valentini, L Braca, E Kenny, JM Lozzi, L Santucci, S
Citation: L. Valentini et al., Fluorinated amorphous carbon thin films: Analysis of the role of the plasma source frequency on the structural and optical properties, J VAC SCI A, 19(5), 2001, pp. 2168-2173

Authors: Goryachko, A Kruger, D Kurps, R Weidner, G Pomplun, K
Citation: A. Goryachko et al., Improved Auger electron spectroscopy sputter depth profiling of W/WNx and WSix layers on Si substrates, J VAC SCI A, 19(5), 2001, pp. 2174-2180

Authors: Huang, S Soo, YL Kao, YH Compaan, AD
Citation: S. Huang et al., Effects of thermal annealing on the interface morphology of CdTe/CdS heterojunctions, J VAC SCI A, 19(5), 2001, pp. 2181-2185

Authors: Langford, RM Petford-Long, AK
Citation: Rm. Langford et Ak. Petford-long, Preparation of transmission electron microscopy cross-section specimens using focused ion beam milling, J VAC SCI A, 19(5), 2001, pp. 2186-2193

Authors: Xu, M Yang, N Yu, WX Xiong, G Liu, CX Chai, CL Luo, GM Mai, ZH Lai, WY
Citation: M. Xu et al., What causes the broad modulation in the x-ray reflectivity curve?, J VAC SCI A, 19(5), 2001, pp. 2194-2196

Authors: Vitale, SA Chae, H Sawin, HH
Citation: Sa. Vitale et al., Silicon etching yields in F-2, Cl-2, Br-2, and HBr high density plasmas, J VAC SCI A, 19(5), 2001, pp. 2197-2206

Authors: Chun, JS Desjardins, P Lavoie, C Petrov, I Cabral, C Greene, JE
Citation: Js. Chun et al., Interfacial reaction pathways and kinetics during annealing of 111-textured Al-TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study, J VAC SCI A, 19(5), 2001, pp. 2207-2216

Authors: Tsay, JS Mangen, T Linden, RJ Wandelt, K
Citation: Js. Tsay et al., Adsorption of oxygen on ultrathin Cu/Pt(111) films, J VAC SCI A, 19(5), 2001, pp. 2217-2221

Authors: Kirsch, PD Ekerdt, JG
Citation: Pd. Kirsch et Jg. Ekerdt, Interfacial chemistry of the Sr/SiOxNy/Si(100) nanostructure, J VAC SCI A, 19(5), 2001, pp. 2222-2231

Authors: Guo, QX Matsuse, M Tanaka, T Nishio, M Ogawa, H Chang, Y Wang, J Wang, SL
Citation: Qx. Guo et al., Characteristics of reactive ion etching for zinc telluride using CH4 and H-2 gases, J VAC SCI A, 19(5), 2001, pp. 2232-2234

Authors: Hsieh, WP Wang, WC Wang, CC Shieu, FS
Citation: Wp. Hsieh et al., Characterization of the arc ion-plated CrN coatings oxidized at elevated temperatures, J VAC SCI A, 19(5), 2001, pp. 2235-2243

Authors: Kim, JP Davidson, M Moorehead, D Puga-Lambers, M Zhai, Q Holloway, P
Citation: Jp. Kim et al., Codoping of magnetron-sputter deposited ZnS : TbOF with Ag, Cu, and Ce forelectroluminescent phosphors, J VAC SCI A, 19(5), 2001, pp. 2244-2251
Risultati: 1-25 | 26-50 | 51-75 | 76-100 | >>