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Results: 1-25/13306

Authors: Morito, K Suzuki, T Fujimoto, M
Citation: K. Morito et al., Effects of Mn dopant on the leakage current properties in SrTiO3 thin films, JPN J A P 1, 40(9B), 2001, pp. 5493-5496

Authors: Yoon, KH Lee, JC Park, J Kang, DH Song, CM Seo, YG
Citation: Kh. Yoon et al., Electrical properties of Mg doped (Ba0.5Sr0.5)TiO3 thin films, JPN J A P 1, 40(9B), 2001, pp. 5497-5500

Authors: Momose, S Sahara, R Nakamura, T Tachibana, K
Citation: S. Momose et al., Diagnosis of oxidation reactions in metalorganic chemical vapor depositionof (Ba,Sr)TiO3 films by in situ Fourier transform infrared spectroscopy, JPN J A P 1, 40(9B), 2001, pp. 5501-5506

Authors: Maiwa, H Ichinose, N
Citation: H. Maiwa et N. Ichinose, Electrical and electromechanical properties of PbZrO3 thin films prepared by chemical solution deposition, JPN J A P 1, 40(9B), 2001, pp. 5507-5510

Authors: Thomas, R Mochizuki, S Mihara, T Ishida, T
Citation: R. Thomas et al., Influence of sputtering and annealing conditions on the structure and ferroelectric properties of Pb(ZrTi)O-3 thin films prepared by RF magnetron sputtering, JPN J A P 1, 40(9B), 2001, pp. 5511-5517

Authors: Yasuda, Y Akamatsu, M Tani, M Yoshida, M Kondo, K Iijima, T
Citation: Y. Yasuda et al., Preparation of lead zirconate titanate thick films by arc-discharged reactive ion-plating method, JPN J A P 1, 40(9B), 2001, pp. 5518-5522

Authors: Wang, ZJ Maeda, R Ichiki, M Kokawa, H
Citation: Zj. Wang et al., Microstructure and electrical properties of lead zirconate titanate thin films deposited by excimer laser ablation, JPN J A P 1, 40(9B), 2001, pp. 5523-5527

Authors: Akedo, J Lebedev, M
Citation: J. Akedo et M. Lebedev, Influence of carrier gas conditions on electrical and optical properties of Pb(Zr,Ti)O-3 thin films prepared by aerosol deposition method, JPN J A P 1, 40(9B), 2001, pp. 5528-5532

Authors: Maki, K Soyama, N Nagamine, K Mori, S Ogi, K
Citation: K. Maki et al., Low-temperature crystallization of sol-gel derived Pb(Zr-0.4,Ti-0.6)O-3 thin films, JPN J A P 1, 40(9B), 2001, pp. 5533-5538

Authors: Wei, ZQ Yamashita, K Okuyama, M
Citation: Zq. Wei et al., Preparation of Pb(Zr0.52TiO0.48)O-3 thin films at low-temperature of less than 400 degrees C by hydrothermal treatment following sol-gel deposition, JPN J A P 1, 40(9B), 2001, pp. 5539-5542

Authors: Kanda, T Kobayashi, Y Kurosawa, MK Yasui, H Higuchi, T
Citation: T. Kanda et al., Estimation of hydrothermally deposited lead zirconate titanate (PZT) thin-film, JPN J A P 1, 40(9B), 2001, pp. 5543-5546

Authors: Wang, XH Ishiwara, H
Citation: Xh. Wang et H. Ishiwara, Sol-gel derived ferroelectric Pb(Zr1-xTix)O-3-SiO2-B2O3 glass-ceramic thinfilms formed at relatively low annealing temperatures, JPN J A P 1, 40(9B), 2001, pp. 5547-5550

Authors: Fujisawa, H Kita, K Shimizu, M Niu, H
Citation: H. Fujisawa et al., Low-temperature fabrication of Ir/Pb(ZrTi)O-3/Ir capacitors solely by metalorganic chemical vapor deposition, JPN J A P 1, 40(9B), 2001, pp. 5551-5553

Authors: Kobune, M Matsuura, O Matsuzaki, T Sawada, T Fujisawa, H Shimizu, M Niu, H Honda, K
Citation: M. Kobune et al., Microstructure and electrical properties of (Pb,La)(Zr,Ti) O-3 films crystallized from amorphous state by two-step postdeposition annealing, JPN J A P 1, 40(9B), 2001, pp. 5554-5558

Authors: Yamaguchi, M Nagatomo, T Masuda, Y
Citation: M. Yamaguchi et al., Preparation of Bi4Ti3O12/Bi2SiO5/Si structures derived by metal organic decomposition technique, JPN J A P 1, 40(9B), 2001, pp. 5559-5563

Authors: Rokuta, E Hotta, Y Choi, JH Tabata, H Kobayashi, H Kawai, T
Citation: E. Rokuta et al., Ferroelectric Bi4Ti3O12 films on Si(100) with an ultrathin buffer layer ofsilicon oxynitride: A comparative study using X-ray photoelectron spectroscopy, JPN J A P 1, 40(9B), 2001, pp. 5564-5568

Authors: Yang, WS Kim, NK Yeom, SJ Kweon, SY Choi, ES Roh, JS
Citation: Ws. Yang et al., Effects of bottom electrodes (Pt and IrO2) on physical and electrical properties of Bi4-xLaxTi3O12 (BLT) thin film, JPN J A P 1, 40(9B), 2001, pp. 5569-5571

Authors: Osada, M Tada, M Kakihana, M Watanabe, T Funakubo, M
Citation: M. Osada et al., Cation distribution and structural instability in Bi4-xLaxTi3O12, JPN J A P 1, 40(9B), 2001, pp. 5572-5575

Authors: Tokumitsu, E Isobe, T Kijima, T Ishiwara, H
Citation: E. Tokumitsu et al., Fabrication and characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using ferroelectric (Bi, La)(4)Ti3O12 films, JPN J A P 1, 40(9B), 2001, pp. 5576-5579

Authors: Kato, K Suzuki, K Nishizawa, K Miki, T
Citation: K. Kato et al., Comparison of microstructure and ferroelectric properties of alkoxy-derived MBi4Ti4O15 (M : Ca or Sr) thin films, JPN J A P 1, 40(9B), 2001, pp. 5580-5584

Authors: Hayashi, T Togawa, D
Citation: T. Hayashi et D. Togawa, Preparation and properties of SrBi2Ta2O9 ferroelectric thin films using excimer UV irradiation and seed layer, JPN J A P 1, 40(9B), 2001, pp. 5585-5589

Authors: Tajiri, M Nozawa, H
Citation: M. Tajiri et H. Nozawa, New fatigue model based on thermionic field emission mechanism, JPN J A P 1, 40(9B), 2001, pp. 5590-5594

Authors: Nukaga, N Mitsuya, M Suzuki, T Nishi, Y Fujimoto, M Funakubo, H
Citation: N. Nukaga et al., Local epitaxial growth of (103) one-axis-oriented SrBi2Ta2O9 thin films prepared at low deposition temperature by metalorganic chemical vapor deposition and their electrical properties, JPN J A P 1, 40(9B), 2001, pp. 5595-5598

Authors: Sakamoto, W Horie, Y Yogo, T Hirano, S
Citation: W. Sakamoto et al., Synthesis and properties of highly oriented (Sr, Ba)(Nb, Ta)(2)O-6 thin films by chemical solution deposition, JPN J A P 1, 40(9B), 2001, pp. 5599-5604

Authors: Sakamaki, K Migita, S Xiong, SB Ota, H Sakai, S Tarui, Y
Citation: K. Sakamaki et al., Fabrication and electrical characteristics of a trench-type metal-ferroelectric-metal-insulator-semiconductor field effect transistor, JPN J A P 1, 40(9B), 2001, pp. 5605-5609
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