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Results: 1-25/4344

Authors: Song, AM Omling, P Samuelson, L Seifert, W Shorubalko, I Zirath, H
Citation: Am. Song et al., Operation of InGaAs/InP-based ballistic rectifiers at room temperature andfrequencies up to 50 GHz, JPN J A P 2, 40(9AB), 2001, pp. L909-L911

Authors: Tamura, R Murao, Y Takeuchi, S Tokiwa, K Watanabe, T Sato, TJ Tsai, AP
Citation: R. Tamura et al., Anomalous transport behavior of a binary Cd-Yb icosahedral quasicrystal, JPN J A P 2, 40(9AB), 2001, pp. L912-L914

Authors: Choi, BD Schroder, DK Koveshnikov, S Mahajan, S
Citation: Bd. Choi et al., Latent iron in silicon, JPN J A P 2, 40(9AB), 2001, pp. L915-L917

Authors: Damilano, B Grandjean, N Pernot, C Massies, J
Citation: B. Damilano et al., Monolithic white light emitting diodes based on InGaN/GaN multiple-quantumwells, JPN J A P 2, 40(9AB), 2001, pp. L918-L920

Authors: Zhang, RP Adivarahan, V Wang, HM Fareed, Q Kuokstis, E Chitnis, A Shatalov, M Yang, JW Simin, G Khan, MA Shur, M Gaska, R
Citation: Rp. Zhang et al., Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes, JPN J A P 2, 40(9AB), 2001, pp. L921-L924

Authors: Kuranioto, M Kimura, A Sasaoka, C Arakida, T Nido, M Mizuta, M
Citation: M. Kuranioto et al., Novel ridge-type InGaN multiple-quantum-well laser diodes fabricated by selective area re-growth on n-GaN substrates, JPN J A P 2, 40(9AB), 2001, pp. L925-L927

Authors: Sun, Y Enokida, T Hagino, H Miyasato, T
Citation: Y. Sun et al., Influence of oxygen on formation of hollow voids at SiC/Si interface, JPN J A P 2, 40(9AB), 2001, pp. L928-L931

Authors: Maruyama, M Furutani, T Yoshinaga, Y Kito, T Matsuda, G Akaike, H Inoue, M Fujimaki, A Hayakawa, H
Citation: M. Maruyama et al., Planarization of the YBa2Cu3O7-x base electrodes in trilayer Josephson junctions, JPN J A P 2, 40(9AB), 2001, pp. L932-L934

Authors: Murakami, A Sekiguchi, S Sakaguchi, T Miyamoto, T Koyama, F Iga, K
Citation: A. Murakami et al., Proposal of optically pumped tunable surface emitting laser, JPN J A P 2, 40(9AB), 2001, pp. L935-L936

Authors: Ouchi, T Sato, T Sakata, H
Citation: T. Ouchi et al., Thin-film vertical-cavity surface-emitting lasers containing strained InGaAs quantum wells fabricated by substrate removal, JPN J A P 2, 40(9AB), 2001, pp. L937-L940

Authors: Park, SH Ahn, D Lee, YT
Citation: Sh. Park et al., Spontaneous polarization and piezoelectric effects on inter-subband scattering rate in wurtzite GaN/AlGaN quantum-well, JPN J A P 2, 40(9AB), 2001, pp. L941-L944

Authors: Nishimura, K Hamada, Y Tsujioka, T Shibata, K Fuyuki, T
Citation: K. Nishimura et al., Solution electrochemiluminescent cell using tris(phenylpyridine) iridium, JPN J A P 2, 40(9AB), 2001, pp. L945-L947

Authors: Ni, JP Tano, TA Ichino, Y Hanada, T Kamata, T Takada, N Yase, K
Citation: Jp. Ni et al., Organic light-emitting diode with TiOPc layer - A new multifunctional optoelectronic device, JPN J A P 2, 40(9AB), 2001, pp. L948-L951

Authors: Kim, HW Mun, JH Yoon, CS Kim, JD
Citation: Hw. Kim et al., Second harmonic generation and photorefractive effect in dye-doped liquid crystals, JPN J A P 2, 40(9AB), 2001, pp. L952-L954

Authors: Kitano, H Tokuhisa, A Doi, M Owa, S
Citation: H. Kitano et al., Measurements of the nonlinear refractive index of an Er3+-doped Bi2O3-based glass fiber, JPN J A P 2, 40(9AB), 2001, pp. L955-L957

Authors: Watanabe, O Idesawa, M
Citation: O. Watanabe et M. Idesawa, Effect of an occluding contour on the volume perception in binocular stereopsis, JPN J A P 2, 40(9AB), 2001, pp. L958-L960

Authors: Takahashi, S Nishimura, Y Tabata, H Shimizu, T
Citation: S. Takahashi et al., Morphology and visible ray reflection of aventurine glass including Cr2O3 microcrystals, JPN J A P 2, 40(9AB), 2001, pp. L961-L963

Authors: Cai, B Hattori, T Deng, HH Komatsu, K Zawadzki, C Keil, N Kaino, T
Citation: B. Cai et al., Refractive index control and grating fabrication of 4 '-N,N-dimethylamino-N-methyl-4-stilbazolium tosylate crystal, JPN J A P 2, 40(9AB), 2001, pp. L964-L966

Authors: Park, J Hong, K Lee, W Shin, Y
Citation: J. Park et al., High-temperature electrical properties of NiO-doped WO3 thick films, JPN J A P 2, 40(9AB), 2001, pp. L967-L969

Authors: Hoshi, H Shin, KC Chung, DH Ishikawa, K Takezoe, H
Citation: H. Hoshi et al., Enhancement of second-harmonic generation in helical ferroelectric liquid-crystal cells under oblique incidence, JPN J A P 2, 40(9AB), 2001, pp. L970-L972

Authors: Ishitani, T Furuta, H Xu, J Kobayashi, S
Citation: T. Ishitani et al., Influence of the surface alignment conditions and the polymer stabilization on the electrooptic characteristics of ferroelectric liquid crystal displays exhibiting half-V switching - A comparison of photoalignment and rubbing technique, JPN J A P 2, 40(9AB), 2001, pp. L973-L975

Authors: Horii, S Toda, T Horita, S
Citation: S. Horii et al., HF and hydrazine monohydrate solution treatment for suppressing oxidation of ZrN film surface, JPN J A P 2, 40(9AB), 2001, pp. L976-L979

Authors: Lee, TW Seong, GY Kim, YD Hwang, H Yoon, S Yoon, E
Citation: Tw. Lee et al., Possibility of two-step As-desorption from (001) InP using surface photoabsorption, JPN J A P 2, 40(9AB), 2001, pp. L980-L982

Authors: Yoshimoto, T Iwata, T Minesawa, R Matsumoto, K
Citation: T. Yoshimoto et al., Emission properties from carbon nanotube field emitter arrays (FEAs) grownon Si emitters, JPN J A P 2, 40(9AB), 2001, pp. L983-L985

Authors: Shiota, T Nakayama, K
Citation: T. Shiota et K. Nakayama, The effect of an electrostatic force on imaging a surface topography by noncontact atomic force microscope, JPN J A P 2, 40(9AB), 2001, pp. L986-L988
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