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Table of contents of journal: *IEEE electron device letters

Results: 1-25/188

Authors: Ibok, E Ahmed, K Hao, MY Ogle, B Wortman, JJ Hauser, JR
Citation: E. Ibok et al., Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics, IEEE ELEC D, 20(9), 1999, pp. 442-444

Authors: Joo, MS Yeo, IS Lee, CH Cho, HJ Jang, SA Lee, SK
Citation: Ms. Joo et al., Effects of nitridation pressure on the characteristics of gate dielectricsannealed in N2O ambient, IEEE ELEC D, 20(9), 1999, pp. 445-447

Authors: Daumiller, I Kirchner, C Kamp, M Ebeling, KJ Kohn, E
Citation: I. Daumiller et al., Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's, IEEE ELEC D, 20(9), 1999, pp. 448-450

Authors: Song, CK Kim, DH
Citation: Ck. Song et Dh. Kim, Observation of the bistable current-voltage characteristics in the highly doped multi-quantum well heterostructure, IEEE ELEC D, 20(9), 1999, pp. 451-453

Authors: Ando, Y Contrata, W Hori, Y Samoto, N
Citation: Y. Ando et al., Monte Carlo simulation for electron transport in MESFET's including realistic band structure of GaAs, IEEE ELEC D, 20(9), 1999, pp. 454-456

Authors: Wang, YC Hong, M Kuo, JM Mannaerts, JP Kwo, J Tsai, HS Krajewski, JJ Chen, YK Cho, AY
Citation: Yc. Wang et al., Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis, IEEE ELEC D, 20(9), 1999, pp. 457-459

Authors: Ma, PX Zampardi, P Zhang, LY Chang, MF
Citation: Px. Ma et al., Determining the effectiveness of HBT emitter ledge passivation by using anon-ledge Schottky diode potentiometer, IEEE ELEC D, 20(9), 1999, pp. 460-462

Authors: Gross, WJ Vasileska, D Ferry, DK
Citation: Wj. Gross et al., A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations, IEEE ELEC D, 20(9), 1999, pp. 463-465

Authors: Fair, RB
Citation: Rb. Fair, Anomalous B penetration through ultrathin gate oxides during rapid thermalannealing, IEEE ELEC D, 20(9), 1999, pp. 466-469

Authors: Zhu, CX Sin, JKO
Citation: Cx. Zhu et Jko. Sin, A P-channel poly-Si/Si1-xGex/Si sandwiched conductivity modulated thin-film transistor, IEEE ELEC D, 20(9), 1999, pp. 470-472

Authors: Gleskova, H Wagner, S
Citation: H. Gleskova et S. Wagner, Amorphous silicon thin-film transistors on compliant polyimide foil substrates, IEEE ELEC D, 20(9), 1999, pp. 473-475

Authors: Han, JI Han, CH
Citation: Ji. Han et Ch. Han, A self-aligned offset polysilicon thin-film transistor using photoresist reflow, IEEE ELEC D, 20(9), 1999, pp. 476-477

Authors: Lee, JW Kim, HK Oh, MR Koh, YH
Citation: Jw. Lee et al., Threshold voltage dependence of LOGOS-isolated thin-film SOINMOSFET on buried oxide thickness, IEEE ELEC D, 20(9), 1999, pp. 478-480

Authors: Manku, T Obrecht, M Lin, Y
Citation: T. Manku et al., High-frequency dependence of channel noise in short-channel RF MOSFET's, IEEE ELEC D, 20(9), 1999, pp. 481-483

Authors: Tseng, YC Huang, WM Ilderem, V Woo, JCS
Citation: Yc. Tseng et al., Floating body induced pre-kink excess low-frequency noise in submicron SOICMOSFET technology, IEEE ELEC D, 20(9), 1999, pp. 484-486

Authors: Yoon, JB Kim, BK Han, CH Yoon, ES Kim, CK
Citation: Jb. Yoon et al., Surface micromachined solenoid on-Si and on-glass inductors for RF applications, IEEE ELEC D, 20(9), 1999, pp. 487-489

Authors: Arnold, E Letavic, T Herko, S
Citation: E. Arnold et al., High-field electron velocity in silicon surface-accumulation layers, IEEE ELEC D, 20(9), 1999, pp. 490-492

Authors: Han, JI Yang, GY Han, CH
Citation: Ji. Han et al., A new self-aligned offset staggered polysilicon thin-film transistor, IEEE ELEC D, 20(8), 1999, pp. 381-383

Authors: Pyi, SH Yeo, IS Weon, DH Kim, YB Kim, HS Lee, SK
Citation: Sh. Pyi et al., Roles of sidewall oxidation in the devices with shallow trench isolation, IEEE ELEC D, 20(8), 1999, pp. 384-386

Authors: Tung, YJ Boyce, J Ho, J Huang, XJ King, TJ
Citation: Yj. Tung et al., A comparison of hydrogen and deuterium plasma treatment effects on polysilicon TFT performance and DC reliability, IEEE ELEC D, 20(8), 1999, pp. 387-389

Authors: Yassine, A Nariman, HE Olasupo, K
Citation: A. Yassine et al., Field and temperature dependence of TDDB of ultrathin gate oxide, IEEE ELEC D, 20(8), 1999, pp. 390-392

Authors: Blanchard, RR del Alamo, JA Adams, SB Chao, PC Cornet, A
Citation: Rr. Blanchard et al., Hydrogen-induced piezoelectric effects in InPHEMT's, IEEE ELEC D, 20(8), 1999, pp. 393-395

Authors: Lee, Q Martin, SC Mensa, D Smith, RP Guthrie, J Rodwell, MJW
Citation: Q. Lee et al., Submicron transferred-substrate heterojunction bipolar transistors, IEEE ELEC D, 20(8), 1999, pp. 396-398

Authors: Klein, P
Citation: P. Klein, An analytical thermal noise model of deep submicron MOSFET's, IEEE ELEC D, 20(8), 1999, pp. 399-401

Authors: Weiss, L Mathis, W
Citation: L. Weiss et W. Mathis, A thermodynamic noise model for nonlinear resistors, IEEE ELEC D, 20(8), 1999, pp. 402-404
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