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Table of contents of journal: *IEEE electron device letters

Results: 1-25/186

Authors: BANERJEE K AMERASEKERA A CHEUNG N HU CM
Citation: K. Banerjee et al., HIGH-CURRENT FAILURE MODEL FOR VLSI INTERCONNECTS UNDER SHORT-PULSE STRESS CONDITIONS, IEEE electron device letters, 18(9), 1997, pp. 405-407

Authors: KATTO H
Citation: H. Katto, DEVICE PARAMETER EXTRACTION IN THE LINEAR REGION OF MOSFETS, IEEE electron device letters, 18(9), 1997, pp. 408-410

Authors: SHAO XP ROMMEL SL ORNER BA KOLODZEY J BERGER PR
Citation: Xp. Shao et al., A P-GE1-XCX N-SI HETEROJUNCTION DIODE CROWN BY MOLECULAR-BEAM EPITAXY/, IEEE electron device letters, 18(9), 1997, pp. 411-413

Authors: LEUNG YK PAUL AK GOODSON KE PLUMMER JD WONG SS
Citation: Yk. Leung et al., HEATING MECHANISMS OF LDMOS AND LIGBT IN ULTRATHIN SOI, IEEE electron device letters, 18(9), 1997, pp. 414-416

Authors: CHIN A CHEN WJ CHANG T KAO RH LIN BC TSAI C HUANG JCM
Citation: A. Chin et al., THIN OXIDES WITH IN-SITU NATIVE-OXIDE REMOVAL, IEEE electron device letters, 18(9), 1997, pp. 417-419

Authors: MA SM ABDELATI WLN MCVITTIE JP
Citation: Sm. Ma et al., SENSITIVITY AND LIMITATIONS OF PLASMA CHARGING DAMAGE MEASUREMENTS USING MOS CAPACITORS STRUCTURES, IEEE electron device letters, 18(9), 1997, pp. 420-422

Authors: MIZUTANI T ARAKAWA M KISHIMOTO S
Citation: T. Mizutani et al., 2-DIMENSIONAL POTENTIAL PROFILE MEASUREMENT OF GAAS HEMT BY KELVIN PROBE FORCE MICROSCOPY, IEEE electron device letters, 18(9), 1997, pp. 423-425

Authors: TANG P FORD J PRYOR B ANANDAKUGAN S WELCH P BURT C
Citation: P. Tang et al., EXTRINSIC BASE OPTIMIZATION FOR HIGH-PERFORMANCE RF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE electron device letters, 18(9), 1997, pp. 426-428

Authors: LAI YL CHANG EY CHANG CY TAI MC LIU TH WANG SP CHUANG KC LEE CT
Citation: Yl. Lai et al., HIGH-EFFICIENCY AND LOW-DISTORTION DIRECTLY-ION-IMPLANTED GAAS POWER MESFETS FOR DIGITAL PERSONAL HANDY-PHONE APPLICATIONS, IEEE electron device letters, 18(9), 1997, pp. 429-431

Authors: KOESTER SJ ISMAIL K LEE KY CHU JO
Citation: Sj. Koester et al., OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL CONDUCTANCE TRANSISTOR FABRICATED IN A STRAINED SI QUANTUM-WELL, IEEE electron device letters, 18(9), 1997, pp. 432-434

Authors: ISMAIL K CHU JO ARAFA M
Citation: K. Ismail et al., INTEGRATED ENHANCEMENT-MODE AND DEPLETION-MODE FET IN MODULATION-DOPED SI SIGE HETEROSTRUCTURES/, IEEE electron device letters, 18(9), 1997, pp. 435-437

Authors: WU YF KELLER BP KELLER S NGUYEN NX LE M NGUYEN C JENKINS TJ KEHIAS LT DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., SHORT-CHANNEL ALGAN GAN MODFETS WITH 50-GHZ F(T) AND 1.7-W/MM OUTPUT-POWER AT 10 GHZ/, IEEE electron device letters, 18(9), 1997, pp. 438-440

Authors: CHAO PC HU W DEORIO H SWANSON AW HOFFMANN W TAFT W
Citation: Pc. Chao et al., TI-GATE METAL-INDUCED PHEMT DEGRADATION IN HYDROGEN, IEEE electron device letters, 18(9), 1997, pp. 441-443

Authors: MARTIN ST LI GP WORLEY E WHITE J
Citation: St. Martin et al., THE GATE BIAS AND GEOMETRY DEPENDENCE OF RANDOM TELEGRAPH SIGNAL AMPLITUDES, IEEE electron device letters, 18(9), 1997, pp. 444-446

Authors: AUTRAN JL DEVINE R CHANELIERE C BALLAND B
Citation: Jl. Autran et al., FABRICATION AND CHARACTERIZATION OF SI-MOSFETS WITH PECVD AMORPHOUS TA2O5 GATE INSULATOR, IEEE electron device letters, 18(9), 1997, pp. 447-449

Authors: MILANOVIC V GAITAN M BOWEN ED TEA NH ZAGHLOUL ME
Citation: V. Milanovic et al., THERMOELECTRIC-POWER SENSOR FOR MICROWAVE APPLICATIONS BY COMMERCIAL CMOS FABRICATION, IEEE electron device letters, 18(9), 1997, pp. 450-452

Authors: ZASLAVSKY A LURYI S KING CA JOHNSON RW
Citation: A. Zaslavsky et al., MULTI-EMITTER SI GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTOR WITH NO BASE CONTACT AND ENHANCED LOGIC FUNCTIONALITY/, IEEE electron device letters, 18(9), 1997, pp. 453-455

Authors: HELLBERG PE ZHANG SL PETERSSON CS
Citation: Pe. Hellberg et al., WORK FUNCTION OF BORON-DOPED POLYCRYSTALLINE SIXGE1-X FILMS, IEEE electron device letters, 18(9), 1997, pp. 456-458

Authors: VANDAMME EP JANSEN P DEFERM L
Citation: Ep. Vandamme et al., MODELING THE SUBTHRESHOLD SWING IN MOSFETS, IEEE electron device letters, 18(8), 1997, pp. 369-371

Authors: SHENG SP SPENCER MG TANG X ZHOU PZ HARRIS GL
Citation: Sp. Sheng et al., POLYCRYSTALLINE CUBIC SILICON-CARBIDE PHOTOCONDUCTIVE SWITCH, IEEE electron device letters, 18(8), 1997, pp. 372-374

Authors: ZHAO JH TONE K WEINER SR CALECA MA DU HH WITHROW SP
Citation: Jh. Zhao et al., EVALUATION OF OHMIC CONTACTS TO P-TYPE 6H-SIC CREATED BY C AND AL COIMPLANTATION, IEEE electron device letters, 18(8), 1997, pp. 375-377

Authors: SUBRAMANIAN V DANKOSKI P DEGERTEKIN L KHURIYAKUB BT SARASWAT KC
Citation: V. Subramanian et al., CONTROLLED 2-STEP SOLID-PHASE CRYSTALLIZATION FOR HIGH-PERFORMANCE POLYSILICON TFT, IEEE electron device letters, 18(8), 1997, pp. 378-381

Authors: LEE KY FANG YK CHEN CW HUANG KC LIANG MS WUU SG
Citation: Ky. Lee et al., THE ANOMALOUS BEHAVIOR OF HYDROGENATED UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS UNDER ELECTRIC STRESS/, IEEE electron device letters, 18(8), 1997, pp. 382-384

Authors: KIM J AHN ST
Citation: J. Kim et St. Ahn, IMPROVEMENT OF THE TUNNEL OXIDE QUALITY BY A LOW THERMAL BUDGET DUAL OXIDATION FOR FLASH MEMORIES, IEEE electron device letters, 18(8), 1997, pp. 385-387

Authors: SIRRINGHAUS H THEISS SD KAHN A WAGNER S
Citation: H. Sirringhaus et al., SELF-PASSIVATED COPPER GATES FOR AMORPHOUS-SILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 18(8), 1997, pp. 388-390
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