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Table of contents of journal: *IEEE electron device letters

Results: 1-25/177

Authors: YEH CF CHEN TJ FAN CL KAO JS
Citation: Cf. Yeh et al., NOVEL GATE DIELECTRIC FILMS FORMED BY ION PLATING FOR LOW-TEMPERATURE-PROCESSED POLYSILICON TFTS, IEEE electron device letters, 17(9), 1996, pp. 421-424

Authors: UDREA F AMARATUNGA GAJ HUMPHREY J CLARK J EVANS AGR
Citation: F. Udrea et al., THE MOS INVERSION LAYER AS MINORITY-CARRIER INJECTOR, IEEE electron device letters, 17(9), 1996, pp. 425-427

Authors: BURGHARTZ JN JENKINS KA SOYUER M
Citation: Jn. Burghartz et al., MULTILEVEL-SPIRAL INDUCTORS USING VLSI INTERCONNECT TECHNOLOGY, IEEE electron device letters, 17(9), 1996, pp. 428-430

Authors: MATSUI Y TORII K HIRAYAMA M FUJISAKI Y IIJIMA S OHJI Y
Citation: Y. Matsui et al., REDUCTION OF CURRENT LEAKAGE IN CHEMICAL-VAPOR-DEPOSITED TA2O5 THIN-FILMS BY OXYGEN-RADICAL ANNEALING, IEEE electron device letters, 17(9), 1996, pp. 431-433

Authors: GRAVIER T KIRTSCH J DANTERROCHES C CHANTRE A
Citation: T. Gravier et al., FLUORINE EFFECTS IN N-P-N DOUBLE-DIFFUSED POLYSILICON EMITTER BIPOLAR-TRANSISTORS, IEEE electron device letters, 17(9), 1996, pp. 434-436

Authors: CHEN CY KANICKI J
Citation: Cy. Chen et J. Kanicki, HIGH FIELD-EFFECT-MOBILITY A-SI-H TFT BASED ON HIGH DEPOSITION-RATE PECVD MATERIALS, IEEE electron device letters, 17(9), 1996, pp. 437-439

Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., HOLE TRAP GENERATION IN THE GATE OXIDE DUE TO PLASMA-INDUCED CHARGING, IEEE electron device letters, 17(9), 1996, pp. 440-442

Authors: EVERS N VENDIER O CHUN C MURTI MR LASKAR J JOKERST NM MOISE TS KAO YC
Citation: N. Evers et al., THIN-FILM PSEUDOMORPHIC ALAS IN0.53GA0.47AS/INAS RESONANT-TUNNELING DIODES INTEGRATED ONTO SI SUBSTRATES/, IEEE electron device letters, 17(9), 1996, pp. 443-445

Authors: BAHL SR CAMNITZ LH HOUNG D MIERZWINSKI M
Citation: Sr. Bahl et al., RELIABILITY INVESTIGATION OF INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 17(9), 1996, pp. 446-448

Authors: ARAFA M FAY P ISMAIL K CHU JO MEYERSON BS ADESIDA I
Citation: M. Arafa et al., DC AND RF PERFORMANCE OF 0.25 MU-M P-TYPE SIGE MODFET, IEEE electron device letters, 17(9), 1996, pp. 449-451

Authors: LIN YS LU SS
Citation: Ys. Lin et Ss. Lu, HIGH-BREAKDOWN-VOLTAGE GA0.51IN0.49P CHANNEL MESFETS GROWN BY GSMBE, IEEE electron device letters, 17(9), 1996, pp. 452-454

Authors: WU YF KELLER BP KELLER S KAPOLNEK D DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., MEASURED MICROWAVE-POWER PERFORMANCE OF ALGAN GAN MODFET/, IEEE electron device letters, 17(9), 1996, pp. 455-457

Authors: SUH D FOSSUM JG PELELLA MM
Citation: D. Suh et al., DYNAMIC DATA RETENTION AND IMPLIED DESIGN CRITERIA FOR FLOATING-BODY SOI DRAM, IEEE electron device letters, 17(8), 1996, pp. 385-387

Authors: OKANDAN M FONASH SJ AWADELKARIM OO CHAN YD PREUNINGER F
Citation: M. Okandan et al., SOFT-BREAKDOWN DAMAGE IN MOSFETS DUE TO HIGH-DENSITY PLASMA-ETCHING EXPOSURE, IEEE electron device letters, 17(8), 1996, pp. 388-390

Authors: WEI A ANTONIADIS DA BAIR LA
Citation: A. Wei et al., MINIMIZING FLOATING-BODY-INDUCED THRESHOLD VOLTAGE VARIATION IN PARTIALLY DEPLETED SOI CMOS, IEEE electron device letters, 17(8), 1996, pp. 391-394

Authors: MORFOULI P GHIBAUDO G OUISSE T VOGEL E HILL W MISRA V MCLARTY P WORTMAN JJ
Citation: P. Morfouli et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF N-MOSFET AND P-MOSFET WITH ULTRATHIN OXYNITRIDE GATE FILMS, IEEE electron device letters, 17(8), 1996, pp. 395-397

Authors: WANG TH CHANG TE CHIANG LP HUANG C
Citation: Th. Wang et al., A NEW TECHNIQUE TO EXTRACT OXIDE TRAP TIME CONSTANTS IN MOSFETS, IEEE electron device letters, 17(8), 1996, pp. 398-400

Authors: ROHATGI A NARASIMHA S KAMRA S KHATTAK CP
Citation: A. Rohatgi et al., FABRICATION AND ANALYSIS OF RECORD HIGH 18.2-PERCENT EFFICIENT SOLAR-CELLS ON MULTICRYSTALLINE SILICON MATERIAL, IEEE electron device letters, 17(8), 1996, pp. 401-403

Authors: DOSHI P MEJIA J TATE K ROHATGI A
Citation: P. Doshi et al., INTEGRATION OF SCREEN-PRINTING AND RAPID THERMAL-PROCESSING TECHNOLOGIES FOR SILICON SOLAR-CELL FABRICATION, IEEE electron device letters, 17(8), 1996, pp. 404-406

Authors: LEE SW IHN TH JOO SK
Citation: Sw. Lee et al., FABRICATION OF HIGH-MOBILITY P-CHANNEL POLY-SI THIN-FILM TRANSISTORS BY SELF-ALIGNED METAL-INDUCED LATERAL CRYSTALLIZATION, IEEE electron device letters, 17(8), 1996, pp. 407-409

Authors: YANG MT CHAN YJ SHIEH JL CHYI JI
Citation: Mt. Yang et al., ENHANCED DEVICE PERFORMANCE BY UNSTRAINED IN0.3GA0.7AS IN0.29AL0.71ASDOPED-CHANNEL FET ON GAAS SUBSTRATES/, IEEE electron device letters, 17(8), 1996, pp. 410-412

Authors: CHEN CL MAHONEY LJ NICHOLS KB BROWN ER GRAMSTORFF BF
Citation: Cl. Chen et al., SELF-ALIGNED P-CHANNEL MISFET WITH A LOW-TEMPERATURE-GROWN GAAS GATE INSULATOR, IEEE electron device letters, 17(8), 1996, pp. 413-415

Authors: BREWS JR
Citation: Jr. Brews, ADDITION TO THE EDITORIAL-BOARD, IEEE electron device letters, 17(7), 1996, pp. 321-321

Authors: SCARPULLA J ENG DC BROWN S MACWILLIAMS KP
Citation: J. Scarpulla et al., RELIABILITY OF METAL INTERCONNECT AFTER A HIGH-CURRENT PULSE, IEEE electron device letters, 17(7), 1996, pp. 322-324

Authors: KHAN MA CHEN Q YANG JW SHUR MS DERMOTT BT HIGGINS JA
Citation: Ma. Khan et al., MICROWAVE OPERATION OF GAN ALGAN-DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, IEEE electron device letters, 17(7), 1996, pp. 325-327
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