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Table of contents of journal: *IEEE electron device letters

Results: 1-25/171

Authors: LUTZE J VENKATESAN S
Citation: J. Lutze et S. Venkatesan, TECHNIQUES FOR REDUCING THE REVERSE SHORT-CHANNEL EFFECT IN SUB-0.5 MU-M CMOS, IEEE electron device letters, 16(9), 1995, pp. 373-375

Authors: PICHON L RAOULT F BONNAUD O PINEL J SARRET M
Citation: L. Pichon et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS HAVING IN-SITU DOPED POLYSILICON SOURCE AND DRAIN CONTACTS, IEEE electron device letters, 16(9), 1995, pp. 376-378

Authors: KUO JB CHEN YG SU KW
Citation: Jb. Kuo et al., SIDEWALL-RELATED NARROW CHANNEL-EFFECT IN MESA-ISOLATED FULLY-DEPLETED ULTRA-THIN SOI NMOS DEVICES, IEEE electron device letters, 16(9), 1995, pp. 379-381

Authors: BASHIR R KIM S QADRI N JIN D NEUDECK GW DENTON JP YERIC G WU K TASCH A
Citation: R. Bashir et al., DEGRADATION OF INSULATORS IN SILICON SELECTIVE EPITAXIAL-GROWTH (SEG)AMBIENT, IEEE electron device letters, 16(9), 1995, pp. 382-384

Authors: LAI CS LEI TF LEE CL
Citation: Cs. Lai et al., THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O, IEEE electron device letters, 16(9), 1995, pp. 385-386

Authors: WANGRATKOVIC J HUANG WM HWANG BY RACANELLI M FOERSTNER J WOO J
Citation: J. Wangratkovic et al., LIFETIME RELIABILITY OF THIN-FILM SOI NMOSFET, IEEE electron device letters, 16(9), 1995, pp. 387-389

Authors: HUR KY MCTAGGART RA VENTRESCA MP WOHLERT R AUCOIN LM KAZIOR TE
Citation: Ky. Hur et al., HIGH-GAIN ALINAS GAINAS/INP HEMT WITH INDIVIDUALLY GROUNDED SOURCE FINGER VIAS/, IEEE electron device letters, 16(9), 1995, pp. 390-392

Authors: FAN JC LEE CP HWANG JA HWANG JH
Citation: Jc. Fan et al., ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFF/, IEEE electron device letters, 16(9), 1995, pp. 393-395

Authors: KUSTERS AM WULLER R GEELEN HJ KOHL A HEIME K
Citation: Am. Kusters et al., SUB-HALF-MICROMETER PSEUDOMORPHIC INP INXGA1-XAS/INP HEMT ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.81) WITH VERY HIGH F(T) VALUES/, IEEE electron device letters, 16(9), 1995, pp. 396-398

Authors: IWAMURO N HARADA Y YAMAZAKI T KUMAGAI N SEKI Y
Citation: N. Iwamuro et al., A NEW VERTICAL IGBT STRUCTURE WITH A MONOLITHIC OVER-CURRENT, OVER-VOLTAGE, AND OVER-TEMPERATURE SENSING AND PROTECTING CIRCUIT, IEEE electron device letters, 16(9), 1995, pp. 399-401

Authors: MATSUMOTO S KIM IJ YACHI T
Citation: S. Matsumoto et al., A NEW HIGH-PERFORMANCE LATERAL INSULATED GATE BIPOLAR-TRANSISTOR FORMED ON QUASI-SOI, IEEE electron device letters, 16(9), 1995, pp. 402-404

Authors: KIM HS KIM SD HAN MK YOON SN CHOI YI
Citation: Hs. Kim et al., BREAKDOWN VOLTAGE ENHANCEMENT OF THE P-N-JUNCTION BY SELF-ALIGNED DOUBLE DIFFUSION PROCESS THROUGH A TAPERED SIO2 IMPLANT MASK, IEEE electron device letters, 16(9), 1995, pp. 405-407

Authors: HUANG AQ
Citation: Aq. Huang, INSULATED GATE P-I-N TRANSISTOR - A NEW MOS CONTROLLED SWITCHING POWER DEVICE, IEEE electron device letters, 16(9), 1995, pp. 408-410

Authors: AJIT JS
Citation: Js. Ajit, A NEW INSULATED-GATE THYRISTOR STRUCTURE WITH TURN-OFF ACHIEVED BY CONTROLLING THE BASE-RESISTANCE, IEEE electron device letters, 16(9), 1995, pp. 411-413

Authors: YAO ZQ HARRISON HB DIMITRIJEV S YEOW YT
Citation: Zq. Yao et al., EFFECTS OF NITRIC-OXIDE ANNEALING OF THERMALLY GROWN SILICON DIOXIDE CHARACTERISTICS, IEEE electron device letters, 16(8), 1995, pp. 345-347

Authors: HAN LK YOON GW KIM J YAN J KWONG DL
Citation: Lk. Han et al., FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING, IEEE electron device letters, 16(8), 1995, pp. 348-350

Authors: BABCOCK JA CRESSLER JD VEMPATI LS CLARK SD JAEGER RC HARAME DL
Citation: Ja. Babcock et al., IONIZING-RADIATION TOLERANCE AND LOW-FREQUENCY NOISE DEGRADATION IN UHV CVD SIGE HBTS/, IEEE electron device letters, 16(8), 1995, pp. 351-353

Authors: LAI PT XU Z LI GQ NG WT
Citation: Pt. Lai et al., MOBILITY IMPROVEMENT OF N-MOSFETS WITH NITRIDED GATE OXIDE BY BACKSURFACE AR+ BOMBARDMENT, IEEE electron device letters, 16(8), 1995, pp. 354-356

Authors: BHATTACHARYA U MONDRY MJ HURTZ G TAN IH PULLELA R REDDY M GUTHRIE J RODWELL MJW BOWERS JE
Citation: U. Bhattacharya et al., TRANSFERRED SUBSTRATE SCHOTTKY-COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS - FIRST RESULTS AND SCALING LAWS FOR HIGH F(MAX), IEEE electron device letters, 16(8), 1995, pp. 357-359

Authors: LEE CH RAVAIOLI U HESS K MEAD CA HASLER P
Citation: Ch. Lee et al., SIMULATION OF A LONG-TERM-MEMORY DEVICE WITH A FULL BAND-STRUCTURE MONTE-CARLO APPROACH, IEEE electron device letters, 16(8), 1995, pp. 360-362

Authors: LIU CT CHANG CP LEE KH LIU R
Citation: Ct. Liu et al., MOSFETS WITH ONE-MASK SEALED DIFFUSION-JUNCTIONS FOR ULSI APPLICATIONS, IEEE electron device letters, 16(8), 1995, pp. 363-365

Authors: BREWS JR
Citation: Jr. Brews, NICOLLIAN,EDWARD,HAIG - IN-MEMORIAM, IEEE electron device letters, 16(7), 1995, pp. 297-297

Authors: KOIZUMI H HIRAOKA K
Citation: H. Koizumi et K. Hiraoka, THE BLOCKING BARRIER EFFECT ON ALUMINUM ELECTROMIGRATION DUE TO TITANIUM LAYERS IN MULTILAYERED INTERCONNECTS OF LSIS, IEEE electron device letters, 16(7), 1995, pp. 298-300

Authors: DOYLE B SOLEIMANI HR PHILIPOSSIAN A
Citation: B. Doyle et al., SIMULTANEOUS GROWTH OF DIFFERENT THICKNESS GATE OXIDES IN SILICON CMOS PROCESSING, IEEE electron device letters, 16(7), 1995, pp. 301-302

Authors: KING YC YU B POHLMAN J HU CM
Citation: Yc. King et al., PUNCHTHROUGH TRANSIENT VOLTAGE SUPPRESSOR FOR LOW-VOLTAGE ELECTRONICS, IEEE electron device letters, 16(7), 1995, pp. 303-305
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