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Table of contents of journal: *IEEE electron device letters

Results: 1-25/157

Authors: YANO K MITSUI M MOROSHIMA H MORITA JI KASUGA M SHIMIZU A
Citation: K. Yano et al., RECTIFIER CHARACTERISTICS BASED ON BIPOLAR-MODE SIT OPERATION, IEEE electron device letters, 15(9), 1994, pp. 321-323

Authors: LEE JL KIM H MUN JK LEE HG PARK HM
Citation: Jl. Lee et al., 2.9V OPERATION GAAS POWER MESFET WITH 31.5-DBM OUTPUT POWER AND 64-PERCENT POWER-ADDED EFFICIENCY, IEEE electron device letters, 15(9), 1994, pp. 324-326

Authors: KOH R MOGAMI T
Citation: R. Koh et T. Mogami, CARRIER RECOMBINATION INFLUENCE ON THE SOI MOSFET FLOATING BODY EFFECT, IEEE electron device letters, 15(9), 1994, pp. 327-329

Authors: WU CL HSU WC SHIEH HM TSAI MS
Citation: Cl. Wu et al., AN IMPROVED INVERTED DELTA-DOPED GAAS INGAAS PSEUDOMORPHIC HETEROSTRUCTURE GROWN BY MOCVD, IEEE electron device letters, 15(9), 1994, pp. 330-332

Authors: LAI JT LEE JY
Citation: Jt. Lai et Jy. Lee, ULTRAHIGH AND CONTROLLABLE DRAIN CURRENT PEAK-TO-VALLEY RATIO IN NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTORS WITH A STRAINED INGAAS CHANNEL, IEEE electron device letters, 15(9), 1994, pp. 333-335

Authors: CHEN HR CHANG CY LEE CP HUANG CH TSANG JS TSAI KL
Citation: Hr. Chen et al., HIGH-CURRENT GAIN, LOW OFFSET VOLTAGE HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS, IEEE electron device letters, 15(9), 1994, pp. 336-338

Authors: CHEN CW FANG YK HSIEH JC LIANG MS
Citation: Cw. Chen et al., A NOVEL SELF-ALIGNED TIN FORMATION BY N2-STEP ANNEALING TI-SALICIDATION FOR SUBMICROMETER CMOS TECHNOLOGY APPLICATION( IMPLANTATION DURING 2), IEEE electron device letters, 15(9), 1994, pp. 339-341

Authors: CHENG HC JUANG MH LIN CT HUANG LM
Citation: Hc. Cheng et al., A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTION, IEEE electron device letters, 15(9), 1994, pp. 342-344

Authors: COHEN SS GILDENBLAT GS
Citation: Ss. Cohen et Gs. Gildenblat, ON THE FREQUENCY-DEPENDENT CAPACITANCE OF THE NITRIDE-OXIDE-NITRIDE CAPACITOR, IEEE electron device letters, 15(9), 1994, pp. 345-347

Authors: AHN JG YAO CS PARK YJ MIN HS DUTTON RW
Citation: Jg. Ahn et al., IMPACT IONIZATION MODELING USING SIMULATION OF HIGH-ENERGY TAIL DISTRIBUTIONS, IEEE electron device letters, 15(9), 1994, pp. 348-350

Authors: CHEN IC RODDER M WANN HJ SPRATT D
Citation: Ic. Chen et al., PERFORMANCE AND RELIABILITY ENHANCEMENT FOR CVD TUNGSTEN POLYCIDED CMOS TRANSISTORS DUE TO FLUORINE INCORPORATION IN THE GATE OXIDE, IEEE electron device letters, 15(9), 1994, pp. 351-353

Authors: CANALI C CAPASSO F MALIK R NEVIANI A PAVAN P TEDESCO C ZANONI E
Citation: C. Canali et al., MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE electron device letters, 15(9), 1994, pp. 354-356

Authors: TSAI HH SU YK LIN HH WANG RL LEE TL
Citation: Hh. Tsai et al., P-N DOUBLE-QUANTUM-WELL RESONANT INTERBAND TUNNELING DIODE WITH PEAK-TO-VALLEY CURRENT RATIO OF 144 AT ROOM-TEMPERATURE, IEEE electron device letters, 15(9), 1994, pp. 357-359

Authors: BURGHARTZ JN JENKINS KA GRUTZMACHER DA SEDGWICK TO STANIS CL
Citation: Jn. Burghartz et al., HIGH-PERFORMANCE EMITTER-UP DOWN SIGE HBTS, IEEE electron device letters, 15(9), 1994, pp. 360-362

Authors: SU LT SHERONY MJ HU H CHUNG JE ANTONIADIS DA
Citation: Lt. Su et al., OPTIMIZATION OF SERIES RESISTANCE IN SUB-0.2 MU-M SOI MOSFETS (VOL 15, PG 145, 1994), IEEE electron device letters, 15(9), 1994, pp. 363-365

Authors: SU LT JACOBS JB CHUNG JE ANTONIADIS DA
Citation: Lt. Su et al., DEEP-SUBMICROMETER CHANNEL DESIGN IN SILICON-ON-INSULATOR (SOI) MOSFETS (VOL 15, PG 183, 1994), IEEE electron device letters, 15(9), 1994, pp. 366-369

Authors: YOON GW LO GQ KIM J HAN LK KWONG DL
Citation: Gw. Yoon et al., FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT, IEEE electron device letters, 15(8), 1994, pp. 266-268

Authors: GABRIEL CT WELING MG
Citation: Ct. Gabriel et Mg. Weling, GATE OXIDE DAMAGE REDUCTION USING A PROTECTIVE DIELECTRIC LAYER, IEEE electron device letters, 15(8), 1994, pp. 269-271

Authors: ABBASPOURSANI E HUANG RS KWOK CY
Citation: E. Abbaspoursani et al., A NOVEL ELECTROMAGNETIC ACCLEROMETER, IEEE electron device letters, 15(8), 1994, pp. 272-273

Authors: LIFSHITZ N LURYI S
Citation: N. Lifshitz et S. Luryi, ENHANCED CHANNEL MOBILITY IN POLYSILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 15(8), 1994, pp. 274-276

Authors: CHANG EY LIN KC LIU EH CHANG CY CHEN TH CHEN J
Citation: Ey. Chang et al., SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY, IEEE electron device letters, 15(8), 1994, pp. 277-279

Authors: HAN LK YOON GW KWONG DL MATHEWS VK FAZAN PC
Citation: Lk. Han et al., EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS, IEEE electron device letters, 15(8), 1994, pp. 280-282

Authors: TING W PETTI C RADIGAN S RAMKUMAR K TRAMMEL P
Citation: W. Ting et al., ANOMALOUS TI SALICIDE GATE TO SOURCE DRAIN SHORTS INDUCED BY DRY SI ETCH DURING TISI2 LOCAL INTERCONNECT FORMATION, IEEE electron device letters, 15(8), 1994, pp. 283-285

Authors: CHEN HR HUANG CH CHANG CY LEE CP TSAI KL TSANG JS
Citation: Hr. Chen et al., HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPING, IEEE electron device letters, 15(8), 1994, pp. 286-288

Authors: EBERT W VESCAN A BORST TH KOHN E
Citation: W. Ebert et al., HIGH-CURRENT P P+-DIAMOND SCHOTTKY DIODE, IEEE electron device letters, 15(8), 1994, pp. 289-291
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