Results: 1-17 |

Table of contents of journal: *IEEE electron device letters

Results: 17

Authors: HORI A SEGAWA M SHIMOMURA H KAMEYAMA S
Citation: A. Hori et al., A SELF-ALIGNED POCKET IMPLANTATION (SPI) TECHNOLOGY FOR 0.2-MU-M DUAL-GATE CMOS, IEEE electron device letters, 13(4), 1992, pp. 174-176

Authors: KAMINS TI NAUKA K JACOWITZ RD HOYT JL NOBLE DB GIBBONS JF
Citation: Ti. Kamins et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF DIODES FABRICATED IN THICK, SELECTIVELY DEPOSITED SI SI1-XGEX EPITAXIAL LAYERS/, IEEE electron device letters, 13(4), 1992, pp. 177-179

Authors: ENQUIST PM SLATER DB SWART JW
Citation: Pm. Enquist et al., COMPLEMENTARY ALGAAS GAAS HBT I-2-L (CHI2L) TECHNOLOGY/, IEEE electron device letters, 13(4), 1992, pp. 180-185

Authors: LO GQ KWONG DL MATHEWS VK FAZAN PC DITALI A
Citation: Gq. Lo et al., DYNAMIC-STRESS-INDUCED DIELECTRIC-BREAKDOWN IN ULTRATHIN NITRIDE OXIDE STACKED FILMS DEPOSITED ON RUGGED POLYSILICON, IEEE electron device letters, 13(4), 1992, pp. 183-185

Authors: AHN J TING W KWONG DL
Citation: J. Ahn et al., HIGH-QUALITY MOSFETS WITH ULTRATHIN LPCVD GATE SIO2, IEEE electron device letters, 13(4), 1992, pp. 186-188

Authors: ACOVIC A HSU CCH HSIA LC BALASINSKI A MA TP
Citation: A. Acovic et al., EFFECTS OF X-RAY-IRRADIATION ON GIDL IN MOSFETS, IEEE electron device letters, 13(4), 1992, pp. 189-191

Authors: LI X LONGENBACH KF WANG Y WANG WI
Citation: X. Li et al., HIGH-BREAKDOWN-VOLTAGE A1SBAS INAS N-CHANNEL FIELD-EFFECT TRANSISTORS/, IEEE electron device letters, 13(4), 1992, pp. 192-194

Authors: BAHL SR DELALAMO JA
Citation: Sr. Bahl et Ja. Delalamo, ELIMINATION OF MESA-SIDEWALL GATE LEAKAGE IN INA1AS INGAAS HETEROSTRUCTURES BY SELECTIVE SIDEWALL RECESSING/, IEEE electron device letters, 13(4), 1992, pp. 195-197

Authors: ARMSTRONG GA FRENCH WD
Citation: Ga. Armstrong et Wd. French, SUPPRESSION OF PARASITIC BIPOLAR EFFECTS IN THIN-FILM SOI TRANSISTORS, IEEE electron device letters, 13(4), 1992, pp. 198-200

Authors: CHEN WL BALASINSKI A ZHANG BL MA TP
Citation: Wl. Chen et al., HOT-CARRIER EFFECTS ON INTERFACE-TRAP CAPTURE CROSS-SECTIONS IN MOSFETS AS STUDIED BY CHARGE PUMPING, IEEE electron device letters, 13(4), 1992, pp. 201-202

Authors: SCHWANK JR FLEETWOOD DM SHANEYFELT MR WINOKUR PS
Citation: Jr. Schwank et al., LATENT THERMALLY ACTIVATED INTERFACE-TRAP GENERATION IN MOS DEVICES, IEEE electron device letters, 13(4), 1992, pp. 203-205

Authors: GRUHLE A KIBBEL H KONIG U ERBEN U KASPER E
Citation: A. Gruhle et al., MBE-GROWN SI SIGE HBTS WITH HIGH-BETA, FT, AND FMAX/, IEEE electron device letters, 13(4), 1992, pp. 206-208

Authors: MITANI K MASUDA H MOCHIZUKI K KUSANO C
Citation: K. Mitani et al., PLANAR A1GAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING SELECTIVE W-CVD/, IEEE electron device letters, 13(4), 1992, pp. 209-210

Authors: AHN ST HAYASHIDA S IGUCHI K TAKAGI J WATANABE T SAKIYAMA K
Citation: St. Ahn et al., HOT-CARRIER DEGRADATION OF SINGLE-DRAIN PMOSFETS WITH DIFFERING SIDEWALL SPACER THICKNESSES, IEEE electron device letters, 13(4), 1992, pp. 211-213

Authors: LU SS HUANG CC
Citation: Ss. Lu et Cc. Huang, HIGH-CURRENT-GAIN GA-0.51IN-0.49P GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, IEEE electron device letters, 13(4), 1992, pp. 214-216

Authors: FANG H KRISCH KS GROSS BJ SODINI CG CHUNG J ANTONIADIS DA
Citation: H. Fang et al., LOW-TEMPERATURE FURNACE-GROWN REOXIDIZED NITRIDED OXIDE GATE DIELECTRICS AS A BARRIER TO BORON PENETRATION, IEEE electron device letters, 13(4), 1992, pp. 217-219

Authors: JUANG MH CHENG HC
Citation: Mh. Juang et Hc. Cheng, THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P-NJUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATE(), IEEE electron device letters, 13(4), 1992, pp. 220-222
Risultati: 1-17 |