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Authors: EAGLESHAM DJ AGARWAL A HAYNES TE GOSSMANN HJ JACOBSON DC POATE JM
Citation: Dj. Eaglesham et al., DAMAGE AND DEFECTS FROM LOW-ENERGY IMPLANTS IN SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 1-4

Authors: OMRI M BONAFOS C CLAVERIE A NEJIM A CRISTIANO F ALQUIER D MARTINEZ A COWERN NEB
Citation: M. Omri et al., IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 5-8

Authors: PRIOLO F LINDNER JKN LARSEN AN POSTE JM
Citation: F. Priolo et al., NEW TRENDS IN ION-BEAM PROCESSING OF MATERIALS - PROCEEDINGS OF THE E-MRS 96 SPRING MEETING SYMP .1. ON NEW TRENDS IN ION-BEAM PROCESSING OF MATERIALS STRASBOURG, FRANCE, JUNE 4-7, 1996 - PREFACE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 7-7

Authors: PRIVITERA V COFFA S PRIOLO F LARSEN KK LIBERTINO S CARNERA A
Citation: V. Privitera et al., ROOM-TEMPERATURE MIGRATION OF ION-BEAM INJECTED POINT-DEFECTS IN CRYSTALLINE SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 9-13

Authors: COWERN NEB HUIZING HGA STOLK PA VISSER CCG DEKRUIF RCM LARSEN KK PRIVITERA V NANVER LK CRANS W
Citation: Neb. Cowern et al., TIME SCALES OF TRANSIENT ENHANCED DIFFUSION - FREE AND CLUSTERED INTERSTITIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 14-18

Authors: DELARUBIA TD
Citation: Td. Delarubia, DEFECT PRODUCTION MECHANISMS IN METALS AND COVALENT SEMICONDUCTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 19-26

Authors: LALITA J KESKITALO N HALLEN A JAGADISH C SVENSSON BG
Citation: J. Lalita et al., DEFECT EVOLUTION IN MEV ION-IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 27-32

Authors: VESTERGAARD HC FANCIULLI M LARSEN AN WEYER G FREITAG K
Citation: Hc. Vestergaard et al., SN-119 MOSSBAUER-SPECTROSCOPY INVESTIGATION OF HEAVILY P-DOPED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 33-36

Authors: SAITO S HAMADA K MINEJI A
Citation: S. Saito et al., EVALUATION AND CONTROL OF DEFECTS, FORMED BY KEV-MEV IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 37-42

Authors: MYERS SM PETERSEN GA FOLLSTAEDT DM HEADLEY TJ MICHAEL JR SEAGER CH
Citation: Sm. Myers et al., STRONG SEGREGATION GETTERING OF TRANSITION-METALS BY IMPLANTATION-FORMED CAVITIES AND BORON-SILICIDE PRECIPITATES IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 43-50

Authors: DEWEERD W BARANCIRA T LANGOUCHE G MILANTS K MOONS R VERHEYDEN J PATTYN H
Citation: W. Deweerd et al., STUDY OF THE TRAPPING OF CO-FE IMPURITIES AT THE INTERNAL WALL OF NANOSIZED SI VOIDS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 51-55

Authors: RAINERI V CAMPISANO SU
Citation: V. Raineri et Su. Campisano, VOIDS IN SILICON AS SINK FOR INTERSTITIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 56-59

Authors: YANKOV RA HATZOPOULOS N SKORUPA W DANILIN AB
Citation: Ra. Yankov et al., PROXIMITY GETTERING OF COPPER IN SEPARATION-BY-IMPLANTED-OXYGEN STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 60-63

Authors: NIPOTI R SERVIDORI M BIANCONI M MILITA S
Citation: R. Nipoti et al., DAMAGE PROFILES IN AS-IMPLANTED [100]SI CRYSTALS - STRAIN BY X-RAY-DIFFRACTOMETRY VERSUS INTERSTITIALS BY RBS-CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 64-67

Authors: KAABI L GONTRAND C LEMITI M REMAKI B BALLAND B MEDDEB J MARTY O
Citation: L. Kaabi et al., INVESTIGATION OF BF2-FILMS - REDISTRIBUTION OF FLUORINE AND BORON UNDER RAPID THERMAL ANNEALING( IMPLANTS IN SILICON THROUGH SIO2), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 68-73

Authors: COFFA S FRANZO G PRIOLO F LIBERTINO S MOSCA R GOMBIA E SPINELLA C
Citation: S. Coffa et al., ION-IMPLANTATION DOPING OF SI FOR OPTOELECTRONIC APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 74-80

Authors: MIGNOTTE C TRAVERSE A MORETTI P MONCHANIN M
Citation: C. Mignotte et al., EXAFS STUDIES OF THERMAL ANNEALING EFFECTS ON THE LOCAL ENVIRONMENT OF ERBIUM IMPLANTED IN LINBO3, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 81-83

Authors: AVRAHAMI Y ZOLOTOYABKO E
Citation: Y. Avrahami et E. Zolotoyabko, STRUCTURAL MODIFICATIONS IN HE-IMPLANTED WAVE-GUIDE LAYERS OF LINBO3, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 84-87

Authors: BINDNER P BOUDRIOUA A LOULERGUE JC MORETTI P
Citation: P. Bindner et al., REFRACTIVE-INDEX AND ANISOTROPY MEASUREMENTS IN HE-GUIDES( IMPLANTED KTIOPO4 (KTP) OPTICAL WAVE), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 88-92

Authors: KOMODA T WEBER J HOMEWOOD KP HEMMENT PLF SEALY BJ
Citation: T. Komoda et al., EFFECT OF FORMING GAS ANNEALS ON THE PHOTOLUMINESCENCE FROM NANOCRYSTALLINE SILICON FORMED BY SI+ IMPLANTATION INTO SIO2 MATRIX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 93-96

Authors: SHIMIZUIWAYAMA T NAKAO S SAITOH K
Citation: T. Shimizuiwayama et al., OPTICAL AND STRUCTURAL-PROPERTIES OF IMPLANTED SILICON NANOCRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 97-100

Authors: GARRIDO B LOPEZ M FERRE S ROMANORODRIGUEZ A PEREZRODRIGUEZ A RUTERANA P MORANTE JR
Citation: B. Garrido et al., VISIBLE PHOTOLUMINESCENCE OF SIO2 IMPLANTED WITH CARBON AND SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 101-105

Authors: SKORUPA W YANKOV RA REBOHLE L FROB H BOHME T LEO K TYSCHENKO IE KACHURIN GA
Citation: W. Skorupa et al., A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 106-109

Authors: DACAPITO F GONELLA F CATTARUZZA E PASCARELLI S MAZZOLDI P MOBILIO S
Citation: F. Dacapito et al., EXAFS STUDY ON AG-DOPED SILICATE-GLASSES IRRADIATED WITH LOW-MASS IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 110-113

Authors: SKORUPA W HEERA V PACAUD Y WEISHART H
Citation: W. Skorupa et al., ION-BEAM PROCESSING OF SINGLE-CRYSTALLINE SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 114-120
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